硅基微環(huán)諧振器（MRR）的傳輸特性研究及應(yīng)用
發(fā)布時(shí)間：2019-02-23 12:25
【摘要】：晶體管特征尺寸的進(jìn)一步減小,使大規(guī)模集成電路的制造受到了量子隧穿效應(yīng)等基本物理原理的限制。僅僅依靠減小晶體管尺寸、提高工作頻率的電學(xué)手段提高信息處理能力的發(fā)展遇到了瓶頸。與此同時(shí),隨著以物聯(lián)網(wǎng)為代表的人類(lèi)社會(huì)進(jìn)程的快速發(fā)展,對(duì)網(wǎng)絡(luò)、視頻和大數(shù)據(jù)等信息應(yīng)用的處理速度和容量都提出了更高的要求�？梢哉f(shuō),電子信息處理性能提高的瓶頸和人們對(duì)信息處理能力的更高要求的矛盾是目前科研人員亟待解決的重要課題。絕緣襯底上硅材料(SOI,Silicon on Insulator)因具有較高折射率差,對(duì)C波段的電磁波具有較強(qiáng)的限制能力,成為制造光電子器件的理想材料。近年來(lái)快速發(fā)展起來(lái)的基于SOI材料的集成光學(xué),繼承了數(shù)十年來(lái)集成電路發(fā)展的成果和思路,采用與CMOS(Complementary Metal Oxide Semiconductor)相兼容的工藝條件實(shí)現(xiàn)結(jié)構(gòu)緊湊的光學(xué)器件。同時(shí),由于硅材料具有良好的等離子色散效應(yīng)和熱光效應(yīng),可方便用于SOI材料的光學(xué)器件的調(diào)諧控制,極大豐富光電子器件功能和適用范圍。在眾多基于SOI材料光學(xué)器件中,微環(huán)諧振器(MRR,Microring Resonators)由一個(gè)閉合的環(huán)形波導(dǎo)和直波導(dǎo)耦合構(gòu)成,因具有工藝成熟、集成度高及可實(shí)現(xiàn)光電混合集成的優(yōu)點(diǎn),常用來(lái)構(gòu)建不同用途的光學(xué)器件,是硅基集成光子器件的重要構(gòu)成單元。本文就是圍繞基于硅基MRR傳輸特性及應(yīng)用展開(kāi)研究。從基礎(chǔ)理論入手,對(duì)SOI材料的體系特性和典型的微納光波導(dǎo)結(jié)構(gòu)、硅基微納波導(dǎo)的基本理論(電磁場(chǎng)理論、頻域耦合模理論和時(shí)域耦合模理論),特別是硅基微納光波導(dǎo)的彎曲耦合進(jìn)行了梳理和探討。利用散射矩陣模型對(duì)Add-Drop型MRR的濾波、開(kāi)關(guān)和時(shí)間特性進(jìn)行了分析。主要工作包括以下幾點(diǎn):1、闡述了硅基微納光子器件的制備工藝、測(cè)試平臺(tái)和測(cè)試方法和步驟。分析了硅基微納波導(dǎo)的單模工作條件、輻射損耗與彎曲半徑的關(guān)系,及耦合系數(shù)和耦合端面的設(shè)計(jì)對(duì)器件輸出性能的影響。最后,設(shè)計(jì)、制備和測(cè)試了一組不同耦合間距值,波導(dǎo)寬度W(28)400 nm,高度H(28)220 nm,平板厚度h(28)90 nm的Add-Drop型MRR。得出耦合間距與自由光譜區(qū)、光學(xué)帶寬、品質(zhì)因子的關(guān)系。為后續(xù)章節(jié)可調(diào)諧Fano諧振器、光學(xué)半加器和一位光學(xué)數(shù)字比較器的設(shè)計(jì)提供參考依據(jù)。2、闡述了Fano譜形產(chǎn)生的機(jī)理,并基于MRR提出了結(jié)構(gòu)簡(jiǎn)單的可調(diào)諧Fano器件。該Fano諧振系統(tǒng)所產(chǎn)生的諧振譜形從根本上說(shuō)是由具有一定相位差的連續(xù)態(tài)和離散態(tài)的相干光干涉形成的。采用傳輸矩陣模型分析了該Fano器件的工作原理及結(jié)構(gòu)參數(shù)對(duì)輸出譜形的影響。還對(duì)硅基光子器件的調(diào)諧原理和調(diào)諧方案進(jìn)行比較和確定,最后在SOI材料上設(shè)計(jì)、制作一個(gè)包含微型熱極調(diào)諧結(jié)構(gòu)的Fano諧振器。實(shí)驗(yàn)結(jié)果表明:通過(guò)控制微型熱極的驅(qū)動(dòng)電壓,Fano諧振器輸出譜形可以被精確調(diào)節(jié)。譜形的消光比達(dá)到10.02 dB,帶邊降落比達(dá)到101.3dB/nm。3、研究一種被稱(chēng)為“導(dǎo)向邏輯”的光信息處理方案,并以MRR為開(kāi)關(guān)構(gòu)建出了半加器和一位光學(xué)數(shù)字比較器。相對(duì)于以往提出的結(jié)構(gòu),不包括任何交叉波導(dǎo)結(jié)構(gòu)且避免單環(huán)出現(xiàn)三個(gè)耦合區(qū),從而降低器件的傳輸損耗及交叉串?dāng)_,能提高輸出信號(hào)的質(zhì)量。并采用輸矩陣模型法討論了一位光學(xué)數(shù)字比較器的結(jié)構(gòu)參數(shù)對(duì)器件輸出性能的影響。作為原理性驗(yàn)證,利用硅的熱光效應(yīng)實(shí)現(xiàn)了光開(kāi)關(guān)的調(diào)諧控制,并分析了其對(duì)應(yīng)靜態(tài)光譜特性,還成功獲得了相應(yīng)的動(dòng)態(tài)結(jié)果。最后,根據(jù)MRR開(kāi)關(guān)的時(shí)間特性,還對(duì)半加器和比較器的極限工作速度進(jìn)行了評(píng)估:若MRR的Q值為410,器件的極限工作頻率約為6.7 GHz;若MRR的Q值為310,則器件的極限工作頻率可達(dá)67 GHz。
[Abstract]:The further reduction in the size of the transistor features allows the fabrication of large-scale integrated circuits to be limited by the basic physical principles, such as the quantum tunneling effect. By means of reducing the size of the transistor and improving the electric means of the working frequency, the bottleneck of the development of the information processing capability is improved. At the same time, with the rapid development of the human society process represented by the Internet of Things, the processing speed and the capacity of the information applications such as the network, the video and the big data have higher requirements. It can be said that the bottleneck of the improvement of the electronic information processing performance and the contradiction between people's higher requirements on the information processing ability are an important subject to be solved by the researchers at present. The silicon material on the insulating substrate (SOI, Silicon on Insulator) has a strong limiting ability to the electromagnetic wave of the C-band due to the high refractive index difference, and is an ideal material for manufacturing the optoelectronic device. In recent years, based on the integrated optics of SOI materials, the results and ideas of integrated circuit development have been inherited for decades, and the optical devices with compact structure are realized by the process conditions compatible with CMOS (Complementary Metal Oxide Semiconductor). meanwhile, because the silicon material has good plasma dispersion effect and thermal light effect, the tuning control of the optical device for the SOI material can be conveniently controlled, and the function and the application range of the optical electronic device are greatly enriched. in many SOI-based optical devices, that micro-ring resonator (MRR, MTRR, MTRR, MTRR) is composed of a closed ring-shaped waveguide and a straight waveguide, is an important component of a silicon-based integrated photonic device. In this paper, the transmission characteristics and application of the silicon-based MRR are studied. Based on the basic theory, the system characteristics of the SOI material and the typical micro-nano-optical waveguide structure, the basic theory of the silicon-based micro-nano-wave guide (the electromagnetic field theory, the frequency-domain coupling mode theory and the time-domain coupling mode theory), in particular the bending coupling of the silicon-based micro-nano-optical waveguide, are analyzed and discussed. The filter, switch and time characteristics of the Add-Drop type MRR are analyzed by the scattering matrix model. The main work includes the following points: 1. The preparation process, test platform and test method and procedure of the silicon-based micro-nano-photonic device are described. The relationship between the single-mode working condition, the radiation loss and the bending radius of the silicon-based micro-nano-waveguide is analyzed, and the influence of the coupling coefficient and the design of the coupling end surface on the output performance of the device is analyzed. Finally, a group of different coupling pitch values, the waveguide width W (28) 400 nm, the height H (28) 220 nm, the slab thickness h (28) 90 nm, and the Add-Drop type MRR were designed, prepared and tested. The relationship between the coupling distance and the free spectral region, the optical bandwidth and the quality factor is obtained. this paper provides a reference for the design of the tunable Fano resonator, the optical semi-adder and an optical digital comparator in the subsequent chapters. 2. The mechanism of the Fano spectral shape generation is described, and the tunable Fano device with simple structure is proposed based on the MRR. The resonance spectral shape generated by the Fano resonance system is fundamentally formed by coherent light interference with a certain phase difference and a discrete state. The working principle of the Fano device and the influence of the structural parameters on the output spectrum are analyzed by the transmission matrix model. the tuning principle and the tuning scheme of the silicon-based photonic device are compared and determined, and finally, a Fano resonator with a micro-thermal-electrode tuning structure is manufactured on the SOI material. The experimental results show that the output spectrum of the Fano resonator can be adjusted accurately by controlling the driving voltage of the micro-thermal electrode. The extinction ratio of the spectral shape is 10.02 dB, the edge-to-drop ratio is 101.3dB/ nm. 3, an optical information processing scheme called 鈥減ilot logic鈥，
本文編號(hào)：2428819
[Abstract]:The further reduction in the size of the transistor features allows the fabrication of large-scale integrated circuits to be limited by the basic physical principles, such as the quantum tunneling effect. By means of reducing the size of the transistor and improving the electric means of the working frequency, the bottleneck of the development of the information processing capability is improved. At the same time, with the rapid development of the human society process represented by the Internet of Things, the processing speed and the capacity of the information applications such as the network, the video and the big data have higher requirements. It can be said that the bottleneck of the improvement of the electronic information processing performance and the contradiction between people's higher requirements on the information processing ability are an important subject to be solved by the researchers at present. The silicon material on the insulating substrate (SOI, Silicon on Insulator) has a strong limiting ability to the electromagnetic wave of the C-band due to the high refractive index difference, and is an ideal material for manufacturing the optoelectronic device. In recent years, based on the integrated optics of SOI materials, the results and ideas of integrated circuit development have been inherited for decades, and the optical devices with compact structure are realized by the process conditions compatible with CMOS (Complementary Metal Oxide Semiconductor). meanwhile, because the silicon material has good plasma dispersion effect and thermal light effect, the tuning control of the optical device for the SOI material can be conveniently controlled, and the function and the application range of the optical electronic device are greatly enriched. in many SOI-based optical devices, that micro-ring resonator (MRR, MTRR, MTRR, MTRR) is composed of a closed ring-shaped waveguide and a straight waveguide, is an important component of a silicon-based integrated photonic device. In this paper, the transmission characteristics and application of the silicon-based MRR are studied. Based on the basic theory, the system characteristics of the SOI material and the typical micro-nano-optical waveguide structure, the basic theory of the silicon-based micro-nano-wave guide (the electromagnetic field theory, the frequency-domain coupling mode theory and the time-domain coupling mode theory), in particular the bending coupling of the silicon-based micro-nano-optical waveguide, are analyzed and discussed. The filter, switch and time characteristics of the Add-Drop type MRR are analyzed by the scattering matrix model. The main work includes the following points: 1. The preparation process, test platform and test method and procedure of the silicon-based micro-nano-photonic device are described. The relationship between the single-mode working condition, the radiation loss and the bending radius of the silicon-based micro-nano-waveguide is analyzed, and the influence of the coupling coefficient and the design of the coupling end surface on the output performance of the device is analyzed. Finally, a group of different coupling pitch values, the waveguide width W (28) 400 nm, the height H (28) 220 nm, the slab thickness h (28) 90 nm, and the Add-Drop type MRR were designed, prepared and tested. The relationship between the coupling distance and the free spectral region, the optical bandwidth and the quality factor is obtained. this paper provides a reference for the design of the tunable Fano resonator, the optical semi-adder and an optical digital comparator in the subsequent chapters. 2. The mechanism of the Fano spectral shape generation is described, and the tunable Fano device with simple structure is proposed based on the MRR. The resonance spectral shape generated by the Fano resonance system is fundamentally formed by coherent light interference with a certain phase difference and a discrete state. The working principle of the Fano device and the influence of the structural parameters on the output spectrum are analyzed by the transmission matrix model. the tuning principle and the tuning scheme of the silicon-based photonic device are compared and determined, and finally, a Fano resonator with a micro-thermal-electrode tuning structure is manufactured on the SOI material. The experimental results show that the output spectrum of the Fano resonator can be adjusted accurately by controlling the driving voltage of the micro-thermal electrode. The extinction ratio of the spectral shape is 10.02 dB, the edge-to-drop ratio is 101.3dB/ nm. 3, an optical information processing scheme called 鈥減ilot logic鈥，
本文編號(hào)：2428819
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