本文關(guān)鍵詞：氧化鋅種子條帶沉積的彎月面調(diào)控及納米線陣列的生長機制研究　出處：《鄭州大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 彎月面 種子 氧化鋅納米線陣列 生長機制 光致發(fā)光譜

【摘要】：氧化鋅是Ⅱ-Ⅵ族半導(dǎo)體材料,擁有直接帶隙寬度為3.37e V,激子束縛能為60me V,因其具有獨特的光學(xué)性質(zhì),壓電性質(zhì),磁特性以及能帶調(diào)節(jié)能力而備受關(guān)注。目前,制備氧化鋅的方法雖然很多,但其實各有優(yōu)缺點�？紤]到用溶液法制備氧化鋅種子,不需要復(fù)雜設(shè)備,成本低,無需較高的反應(yīng)溫度,制備過程簡單有效且無污染,非常適合我們進一步的研究工作。本實驗用溶液法結(jié)合間歇式提拉法的方式在玻璃襯底上提拉條紋狀氧化鋅種子層,在制備種子層的過程中,涉及到三相交界處彎月面宏觀和微觀變化對制備種子的影響,本實驗用CCD顯微觀察裝置來對彎月面在提拉過程中的靜態(tài)圖像和動態(tài)變化進行觀察,分析與研究提拉法中所涉及到的幾個相關(guān)實驗參數(shù)對彎月面宏觀變化的影響,了解了種子顆粒在襯底上的沉積規(guī)律后,本實驗通過溶液法結(jié)合間歇式提拉法的方式在襯底上制備條紋狀氧化鋅種子層,并對其進行相關(guān)的表征與分析。結(jié)合氧化鋅種子的制備現(xiàn)狀,本論文主要做了以下幾方面的工作:首先,用CCD顯微觀察裝置從多角度多方面對彎月面的靜態(tài)圖像進行分析與研究。在此過程中我們先對CCD顯微觀察裝置所對應(yīng)的物距、像距、視場大小、圖片尺寸、景深及其光學(xué)成像原理做了系統(tǒng)的分析;然后從多角度對彎月面拍攝,對所拍攝到的彎月面及存在的影響因素進行分析驗證;最后將表面改性后的襯底以及其它材料在液體中形成的彎月面與裸襯底在液體中所形成的彎月面進行對比分析,了解不同材料在液體中形成的彎月面不同的內(nèi)在原因。其次,用CCD顯微觀察裝置觀察提拉過程中彎月面的動態(tài)變化,分析研究間歇式提拉法所涉及到的相關(guān)實驗參數(shù)在提拉過程中對彎月面動態(tài)變化的影響,了解在玻璃襯底上提拉條紋狀氧化鋅種子條帶時種子顆粒在襯底上的沉積機理。再次,本實驗通過溶液法結(jié)合間歇式提拉法的方式在襯底上制備條紋狀氧化鋅種子層,并對其進行相關(guān)的表征與分析。最后,將沉積條紋狀氧化鋅種子層的襯底放在等摩爾濃度的硝酸鋅和六次甲基四胺的去離子水溶液中恒溫生長一定時間,并用光學(xué)顯微鏡,掃描隧道電子顯微鏡,X射線衍射儀,紫外可見分光光度計和熒光光譜儀對樣品的形貌結(jié)構(gòu)及生長狀況進行表征與分析。SEM結(jié)果表明,生長所得產(chǎn)物為六方纖鋅礦結(jié)構(gòu)氧化鋅,分布直徑在100nm左右。XRD表明氧化鋅納米線/棒陣列沿著[001]方向的擇優(yōu)取向生長,而且結(jié)晶度高。紫外可見表明陣列在350nm附近具有較強的吸收峰。PL表明在380nm附近具有較高的紫外發(fā)光峰,可見光區(qū)無發(fā)光峰說明樣品缺陷少。
[Abstract]:Zinc Oxide is a type of second and sixth family semiconductor materials. It has a direct gap width of 3.37e V, and an exciton binding energy of 60me V. Because of its unique optical properties, piezoelectric properties, magnetic properties and energy band adjustment capabilities, it has attracted much attention. At present, there are many ways to prepare Zinc Oxide, but it has its own advantages and disadvantages. Considering the preparation of Zinc Oxide seeds by solution method, no complex equipment is needed, low cost and high reaction temperature. The preparation process is simple, effective and pollution-free, which is very suitable for our further research work. This experiment by solution method combined with intermittent pulling method way striped Zinc Oxide pulling the seed layer on the glass substrate, in the preparation process of the seed layer, refers to the three-phase boundary meniscus of macroscopic and microscopic changes of seed preparation, the experiment used CCD microscopy to observe the static image and dynamic the changes of meniscus in the process of lifting device, analysis of the influence of several experimental parameters involved in the study and the Czochralski method on the macro changes of meniscus, understand the deposition of seed particles on the substrate after the experiment by solution method with intermittent coating method to prepare seed layer in striped Zinc Oxide on the substrate, and the characterization and Analysis on the related. Combined with the current situation of Zinc Oxide seed preparation, the following works were done in this paper. First, the static image of meniscus was analyzed and studied from multiple angles and multiple perspectives with CCD micro observation device. In this process, we first to CCD observations corresponding to the device object distance and image distance, field size, image size, depth and optical imaging principle were analyzed; then from the perspective of meniscus meniscus of shooting, captured and existing factors into the analysis of verification; finally, bending the surface modification of the substrate surface and other materials formed in the liquid meniscus and bare substrate formed in the liquid for comparative analysis, understand the intrinsic reason of meniscus of different materials formed in the liquid in different. Secondly, to observe the dynamic changes of CCD device with microscopic observation in the process of drawing the meniscus, related experimental parameters analysis of intermittent Czochralski method involves the change of meniscus dynamic in the process of lifting the understanding on the glass substrate pulling striped strip when Zinc Oxide seed seed particles on the substrate deposition mechanism. Thirdly, the stripe like Zinc Oxide seed layer was prepared on the substrate by solution method combined with intermittent Czochralski method, and its related characterization and analysis were carried out. Finally, the substrate deposition stripes on the other Zinc Oxide seed layer growth time constant temperature deionized water solution the molar concentration of zinc nitrate and six methyl four amine, and by optical microscopy, scanning tunneling microscope, X ray diffractometer, UV VIS spectrophotometer and fluorescence spectrometer on the morphology of the samples the structure and growth condition were characterized and analyzed. The results of SEM show that the growth product is six - party wurtzite structure Zinc Oxide with a diameter of about 100nm. XRD shows that the Zinc Oxide nanowires / rod arrays grow along the preferred orientation along the [001] direction and have high crystallinity. UV visible shows that the array has a strong absorption peak near 350nm. PL shows a high UV peak in the vicinity of 380nm, and there is no luminescence peak in the visible region indicating that the sample has less defect.
【學(xué)位授予單位】：鄭州大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TQ132.41;TB383.1

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