本文選題：鉭摻雜氧化鋅 + 磁控濺射法�。� 參考：《人工晶體學報》2017年09期

【摘要】：采用射頻磁控濺射法,在不同的襯底溫度下制備了鉭(Ta)摻雜的氧化鋅(ZnO)薄膜,采用X射線能譜(EDS)、X射線衍射(XRD)、掃描電鏡(SEM)、紫外-可見分光光度計和光致發(fā)光(PL)光譜研究了襯底溫度對制備的Ta摻雜ZnO薄膜的組分、微觀結構、形貌和光學特性的影響。EDS的檢測結果表明,Ta元素成功摻入到了ZnO薄膜;XRD圖譜表明,摻入的Ta雜質是替代式雜質,沒有破壞ZnO的六方晶格結構,隨著襯底溫度的升高,(002)衍射峰的強度先增大后降低,在400℃時達到最大;SEM測試表明當襯底溫度較高時(400℃和500℃),Ta摻雜ZnO薄膜的晶粒明顯變大;紫外-可見透過光譜顯示,在可見光范圍,Ta摻雜ZnO薄膜的平均透光率均高于80%,襯底不加熱時制備的Ta摻雜ZnO的透光率最高;制備的Ta摻雜ZnO薄膜的禁帶寬度范圍為3.34~3.37 e V,襯底溫度為500℃時制備的Ta摻雜ZnO薄膜的禁帶寬度最小,為3.34 e V。PL光譜表明襯底溫度為500℃時制備的Ta摻雜ZnO薄膜中缺陷較多,這也是造成薄膜禁帶寬度變小的原因。
[Abstract]:Ta doped ZnO thin films were prepared by RF magnetron sputtering at different substrate temperatures. The composition and microstructure of Ta doped ZnO films prepared by substrate temperature were studied by means of X-ray energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-Vis spectrophotometer and photoluminescence (PL) spectra. Effects of morphology and optical properties. The results showed that Ta elements were successfully doped into ZnO films. The results showed that the doped Ta impurities were substituted impurities and did not destroy the hexagonal lattice structure of ZnO. With the increase of substrate temperature, the intensity of diffraction peak first increases and then decreases, and the maximum intensity is obtained at 400 鈩，

本文編號：1795122