本文選題：高功率脈沖磁控濺射　切入點(diǎn)：CrNx薄膜　出處：《大連理工大學(xué)》2011年碩士論文

【摘要】：高功率脈沖磁控濺射(HPPMS)技術(shù)由于具有濺射粒子離化率高,等離子體密度高,功率密度可到達(dá)幾個(gè)kW/cm2,離子電流可到達(dá)幾個(gè)A/cm2,并具有濺射粒子能量大等特點(diǎn),可以沉積致密、高性能薄膜,對(duì)薄膜的制備和改性具有良好的作用,而且作為一種新技術(shù)在國(guó)外已經(jīng)得到廣泛研究,但在國(guó)內(nèi)尚未見(jiàn)報(bào)道,因此對(duì)高功率脈沖(HPPMS)技術(shù)的研究具有非常重要的意義。本論文采用高功率脈沖非平衡磁控濺射(HPPUMS)技術(shù),制備了一系列的CrNx薄膜和Cu薄膜,并對(duì)HPPUMS技術(shù)的工作參數(shù)與沉積特性之間進(jìn)行了研究。 本文第三章采用高功率脈沖非平衡磁控濺射技術(shù)(HPPUMS)能夠制備一系列的CrNx薄膜,并與在相同條件下采用中頻磁控濺射(MFMS)技術(shù)制備的CrNx薄膜進(jìn)行了對(duì)比研究。結(jié)果發(fā)現(xiàn)：在相同膜厚的條件下,與中頻磁控濺射(MFMS)技術(shù)相比,HPPUMS技術(shù)能夠制備出綜合性能較好的CrNx薄膜：具有較高的硬度、較高結(jié)合強(qiáng)度和低摩擦系數(shù)；沉積生成物是由CrN和Cr2N組成的兩相膜。并采用Cr靶對(duì)HPPUMS放電的脈沖電壓和脈沖電流進(jìn)行了診斷,結(jié)果表明：工作氣壓,反應(yīng)氣體N2分別對(duì)HPPUMS放電的脈沖電壓、脈沖電流和脈沖頻率都有影響。 本文第四章采用高功率脈沖非平衡磁控濺射(HPPUMS)技術(shù)沉積制備Cu薄膜。研究發(fā)現(xiàn)：工作氣壓、基片負(fù)偏壓、線圈勵(lì)磁電流等沉積參數(shù)對(duì)Cu薄膜的沉積速率有明顯的影響。針對(duì)高功率脈沖磁控濺射技術(shù)沉積薄膜速度低的缺點(diǎn),可以采用外加勵(lì)磁線圈的方法加以改善,改善度可到達(dá)55.29%。高功率脈沖非平衡磁控濺射對(duì)Cu靶的離化率高達(dá)28.37%以上,而且等離子體密度可以達(dá)到1019/m3數(shù)量級(jí)。
[Abstract]:The high power pulsed magnetron sputtering (HPPMS) technique has the advantages of high ionization rate of sputtering particles, high plasma density, power density up to several kW / cm ~ 2, ion current up to several A / M ~ (2), and high energy of sputtering particles. High performance thin films have a good effect on the preparation and modification of films, and as a new technology has been widely studied abroad, but has not been reported in China. Therefore, it is of great significance to study the high power pulsed HPPMS technology. In this thesis, a series of CrNx and Cu thin films were prepared by using the high power pulsed unbalanced magnetron sputtering (HPPUMS) technique. The relationship between working parameters and deposition characteristics of HPPUMS technology is also studied. In chapter 3, a series of CrNx thin films can be prepared by using high power pulsed unbalanced magnetron sputtering technique. The results are compared with those of CrNx films prepared by if magnetron sputtering under the same conditions. The results show that the films are of the same thickness. Compared with the intermediate frequency magnetron sputtering (MF MS) technique, the CrNx thin films with better comprehensive properties can be prepared by HP-PUMS technique, with higher hardness, higher bonding strength and lower friction coefficient. The deposition product is a two-phase film composed of CrN and Cr2N. The pulse voltage and pulse current of HPPUMS discharge are diagnosed by Cr target. The results show that the pulse voltage of HPPUMS discharge is affected by the working pressure and the reaction gas N2, respectively. Both the pulse current and the pulse frequency have an effect. In chapter 4, Cu thin films were deposited by high power pulsed unbalanced magnetron sputtering (HPPUMS) technique. The deposition parameters such as coil excitation current have obvious influence on the deposition rate of Cu thin film. In view of the disadvantage of low deposition speed of high power pulsed magnetron sputtering technology, the method of external excitation coil can be used to improve the deposition rate of Cu film. The improvement can reach 55.29. The ionization rate of Cu target by high power pulsed unbalanced magnetron sputtering is over 28.37%, and the plasma density can reach 1019/m3 order.
【學(xué)位授予單位】：大連理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2011
【分類(lèi)號(hào)】：O484.1

【引證文獻(xiàn)】

相關(guān)碩士學(xué)位論文 前2條

1 臧海蓉;基于HPPUMS技術(shù)在不銹鋼襯底上制備CrN_x薄膜及其性能研究[D];大連理工大學(xué);2012年

2 丁安邦;中頻反應(yīng)磁控濺射制備二氧化硅薄膜及其結(jié)構(gòu)與光學(xué)性能的研究[D];大連理工大學(xué);2013年

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本文編號(hào)：1670300