Exploiting new concepts for dense,fast,and nonvolatile random access memory with reduced energy consumption is a significant issue for information technology.Here we design an ’electrically written and optically read’information storage device employing BiFeO₃/Au heterostructures with strong absorption resonance.The electrooptic effect is the basis for the device design,which arises from the strong absorption resonance in BiFeO₃/Au heterostructures and the electrically tuna... 

【文章來源】：Chinese Physics Letters. 2015,32(07)SCICSCD

【文章頁數(shù)】：4 頁


本文編號(hào)：3439360