基于交聯(lián)PVP薄膜的有機(jī)電雙穩(wěn)器件
發(fā)布時(shí)間:2019-02-28 19:55
【摘要】:有機(jī)存儲(chǔ)器件的研究是未來(lái)電子技術(shù)領(lǐng)域的重要方向之一,其中有機(jī)電雙穩(wěn)器件因柔性、透明、成本低、制備簡(jiǎn)單、可大面積制作、可應(yīng)用在印刷電子等優(yōu)點(diǎn)而受到廣泛深入地研究。用溶液旋涂法制備層狀結(jié)構(gòu)有機(jī)電雙穩(wěn)器件中存在上層溶液溶解下層薄膜的問(wèn)題,利用有機(jī)薄膜晶體管中應(yīng)用廣泛的交聯(lián)聚合物薄膜可以解決這一問(wèn)題。本論文的主要工作就是將交聯(lián)聚合物薄膜應(yīng)用在了有機(jī)電雙穩(wěn)器件中,對(duì)其電雙穩(wěn)工作特性進(jìn)行了研究和探討。主要內(nèi)容如下:(1)通過(guò)制備交聯(lián)PVP薄膜,研究了交聯(lián)PVP膜的物理特性,包括溶劑抗性、表面接觸角、SEM表征等,然后,通過(guò)制備Glass/ITO/交聯(lián)PVP/Al的MIM結(jié)構(gòu)器件來(lái)研究交聯(lián)PVP膜的漏電流電學(xué)特性。研究表明,在溫度200 ℃、時(shí)間1 h的退火條件下,交聯(lián)性能最佳,PVP膜難以被溶劑溶解。(2)將優(yōu)化的交聯(lián)PVP薄膜引入到PCBM/PVP電雙穩(wěn)器件研究中,解決了溶液法制備多層電雙穩(wěn)器件中的溶劑互溶問(wèn)題,提高了器件的電雙穩(wěn)特性。研究得到結(jié)構(gòu)為Glass/ITO/交聯(lián)PVP/PCBM/純PVP/A1的器件性能最好,在電壓0 V→-3 V→O V →3 V→0 V掃描方式的Ⅰ-V測(cè)試下,其Ⅰ-Ⅴ曲線的開(kāi)關(guān)比最大達(dá)到了 2×102,這一結(jié)果好于基于未交聯(lián)PVP制備的器件。此外,結(jié)合器件的I-V曲線的線性擬合得到的載流子輸運(yùn)機(jī)制,發(fā)現(xiàn)在不同電壓下,活性層中存在的俘獲中心對(duì)載流子的俘獲與釋放是導(dǎo)致器件發(fā)生低高態(tài)轉(zhuǎn)變的原因。(3)實(shí)現(xiàn)了基于交聯(lián)PVP和納米Au體系的電雙穩(wěn)器件,器件結(jié)構(gòu)為Glass/ITO/交聯(lián)PVP/納米Au/Al,得到了較好的電雙穩(wěn)特性,器件最大開(kāi)關(guān)比可以達(dá)到2×103。然后,對(duì)該器件的I-V曲線圖分段進(jìn)行數(shù)據(jù)擬合研究和探討了該電雙穩(wěn)器件的載流子輸運(yùn)機(jī)制,結(jié)果表明器件產(chǎn)生電雙穩(wěn)特性的原因是Au納米顆粒作為俘獲中心對(duì)載流子的俘獲與釋放。(4)通過(guò)對(duì)比以上兩種材料體系制備的電雙穩(wěn)器件,發(fā)現(xiàn)在交聯(lián)PVP電雙穩(wěn)器件中,相較于PCBM,納米Au更適合制備電雙穩(wěn)器件,其制備的器件具有更好的電雙穩(wěn)特性。
[Abstract]:The research of organic storage devices is one of the important directions in the field of electronic technology in the future, in which electromechanical bistable devices can be fabricated on a large scale because of their flexibility, transparency, low cost, simple fabrication, and so on. It can be used in printing electronics and other advantages and has been extensively and in-depth research. The solution spin coating method is used to fabricate layered electromechanical bistable devices. The problem of upper layer solution dissolving the lower layer film can be solved by using the crosslinked polymer film, which is widely used in organic thin film transistor. The main work of this paper is to apply cross-linked polymer film to electromechanical bistable devices, and to study and discuss the electrical bistable working characteristics of cross-linked polymer films. The main contents are as follows: (1) the physical properties of cross-linked PVP films, including solvent resistance, surface contact angle, SEM characterization and so on, were studied by preparing cross-linked PVP films. The leakage current characteristics of cross-linked Glass/ITO/ PVP/Al films were studied by fabricating MIM structure devices of cross-linked PVP films. The results show that the best crosslinking property is obtained under the annealing condition of 200 鈩,
本文編號(hào):2432124
[Abstract]:The research of organic storage devices is one of the important directions in the field of electronic technology in the future, in which electromechanical bistable devices can be fabricated on a large scale because of their flexibility, transparency, low cost, simple fabrication, and so on. It can be used in printing electronics and other advantages and has been extensively and in-depth research. The solution spin coating method is used to fabricate layered electromechanical bistable devices. The problem of upper layer solution dissolving the lower layer film can be solved by using the crosslinked polymer film, which is widely used in organic thin film transistor. The main work of this paper is to apply cross-linked polymer film to electromechanical bistable devices, and to study and discuss the electrical bistable working characteristics of cross-linked polymer films. The main contents are as follows: (1) the physical properties of cross-linked PVP films, including solvent resistance, surface contact angle, SEM characterization and so on, were studied by preparing cross-linked PVP films. The leakage current characteristics of cross-linked Glass/ITO/ PVP/Al films were studied by fabricating MIM structure devices of cross-linked PVP films. The results show that the best crosslinking property is obtained under the annealing condition of 200 鈩,
本文編號(hào):2432124
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