【摘要】：相變內(nèi)存(PCM)是一種使用相變材料存儲(chǔ)數(shù)據(jù)的內(nèi)存技術(shù),具有非易失、存儲(chǔ)密度高、低能耗和擴(kuò)展性強(qiáng)等優(yōu)點(diǎn),但也存在寫(xiě)操作次數(shù)有限的缺陷。為了克服該問(wèn)題,近期的研究主要集中在優(yōu)化寫(xiě)操作和磨損均衡技術(shù)2個(gè)方面,但這些技術(shù)對(duì)于快速磨損PCM并使之失效的惡意攻擊還存在一定的缺陷。該文提出一種PCM磨損均衡方法,將內(nèi)存分成2個(gè)層級(jí),不同的層級(jí)擁有各自獨(dú)立的地址隨機(jī)映射表,不同層級(jí)的內(nèi)存單元根據(jù)該表將邏輯地址轉(zhuǎn)換為物理地址。同時(shí),地址隨機(jī)映射表根據(jù)不同層級(jí)的寫(xiě)操作次數(shù)閾值進(jìn)行動(dòng)態(tài)更新。該方法不僅實(shí)現(xiàn)了PCM的磨損均衡,而且能夠抵御惡意磨損程序的攻擊。實(shí)驗(yàn)表明:相比已有的3種磨損均衡方法,該方法的磨損均衡效果提升高達(dá)87.5%;同時(shí),對(duì)性能的影響不超過(guò)6%,增加的存儲(chǔ)開(kāi)銷(xiāo)不超過(guò)內(nèi)存總體大小的1‰。
[Abstract]:Phase change memory (PCM) is a kind of memory technology which uses phase-change materials to store data. It has the advantages of non-volatile, high storage density, low energy consumption and strong expansibility, but it also has the defect of limited write operation times. In order to overcome this problem, recent studies have focused on two aspects: optimal write operation and wear equalization techniques, but these techniques still have some defects in the malicious attacks that quickly wear out and invalidate PCM. In this paper, a PCM wear equalization method is proposed, in which the memory is divided into two levels, and each level has its own random mapping table of addresses. The memory units of different levels translate the logical addresses into physical addresses according to this table. At the same time, the address random mapping table is dynamically updated according to the write number threshold of different levels. This method not only realizes the wear balance of PCM, but also can resist the attack of malicious wear program. The experimental results show that the wear equalization effect of this method is up to 87.5% compared with the existing three wear equalization methods, and the effect on performance is not more than 6, and the storage cost is less than 1 鈥，

本文編號(hào)：2253746