阻變式存儲器性質的研究
發(fā)布時間：2018-08-31 20:37
【摘要】：隨著科學技術的進步，半導體制造工藝水平的提高，信息產業(yè)得到了快速發(fā)展。信息存儲作為信息技術的一部分也得到了空前進步，存儲器正朝著集成度不斷提高、外觀更加精巧、重量更輕、存取速度更快、存儲容量不斷增大的方向發(fā)展。傳統(tǒng)意義上的存儲器是基于晶體管對電荷的存儲而制造的，許多時候無法滿足信息技術迅速發(fā)展的需要，因此尋找一種高密度、非揮發(fā)性，低功耗的下一代存儲器已經(jīng)迫在眉睫�，F(xiàn)階段更多的研究者們把關注的重點放在非易失性存儲器上，例如鐵電存儲器，磁存儲器，相變存儲器、電阻存儲器。在這些存儲器中，阻變存儲器因自身的許多優(yōu)點普遍受到了人們的廣泛關注，它具有結構簡單、讀寫速度快、制造成本低、功耗低、單個器件可縮小至數(shù)十納米等特點，在眾多的絕緣材料和半導體材料中紛紛發(fā)現(xiàn)這種新奇的電阻開關效應。隨著研究的不斷進行，我們發(fā)現(xiàn)了阻變存儲器許多新的有趣的現(xiàn)象：單極性電阻開關和雙極性電阻開關在一定的限制條件下可以相互轉化；阻變存儲器電學性質I-V曲線的順時針旋轉和逆時針的旋轉受到電形成過程的影響，可以通過控制電形成過程來控制其旋轉方向；我們在阻變存儲器的研究中發(fā)現(xiàn)了無極性電阻開關和非常規(guī)雙極性電阻開關的存在，同時得出非常規(guī)雙極性電阻開關在合適的條件下可以轉化為常規(guī)性雙極性電阻開關。這些現(xiàn)象的發(fā)現(xiàn)能夠為研究者更全面的了解電阻開關的形成機制提供很好的幫助。然而迄今為止，還沒有哪一個理論模型能對這些現(xiàn)象作出一個完整清晰的解釋，理論分析還比較欠缺，仍有大量工作要做。本論文通過激光脈沖技術(PLD)制備了薄膜電阻開關器件，通過改變襯底條件，引入光照等方法來具體研究阻變存儲器的機制，另外，本人在對電阻開關實現(xiàn)邏輯門電路的研究中有些新的想法和研究結果。本論文主要內容包括以下幾個方面： 1．采用脈沖激光沉積技術制備了Au/STO/Pt結構的阻變存儲器件，通過X射線衍射儀(XRD)、掃描電子顯微鏡(SEM)、原子力顯微鏡(AFM)分析薄膜的特性。之后應用Keiythley2400對阻變器件進行電學性能測試，在經(jīng)歷了Electroforming電壓操作后，阻變器件表現(xiàn)出良好的開關性能，包括較低的閾值電壓、良好的抗疲勞性和保持特性。根據(jù)測得的電學性質I-V曲線，應用缺陷和氧空位之間捕獲和去捕獲理論來解釋所得到的雙極性電阻開關性質。另外，根據(jù)雙極性電阻開關的特點和優(yōu)勢，構造適當?shù)倪壿嬛�，在前人的基礎之上，利用簡單的阻變存儲器來實現(xiàn)數(shù)據(jù)存取，結合現(xiàn)代隨機存儲器的結構和新型阻變存儲器的工藝，實現(xiàn)新型阻變存儲器的構造，并將阻變存儲器與晶體管存儲器進行簡單的比較，在芯片功能，引腳作用，如何實現(xiàn)存儲方面進行了介紹。 2．制備了Au/Nb:STO/Pt和Au/Nb:STO/FTO三明治結構阻變存儲器，通過各種表征手法分析兩種存儲器結構上的異同，分別測量它們的電學I-V曲線，由于襯底的不同曲線趨勢會有明顯差異，對阻變存儲器的性質產生了一定影響，，這是因為，肖特基勢壘在阻變開關現(xiàn)象中起到了重要作用。使用LED陣列燈光對器件進行照射，觀測兩種不同器件在光照后表現(xiàn)出來的共同特征，并根據(jù)理論基礎解釋這個現(xiàn)象。通過不同的激發(fā)電壓和限制電流來實現(xiàn)阻變開關器由雙極性向單極性的轉換，同時，我們知道如果設置限制電流在使在第一個形成過程產生了足夠的熱量，同樣可以使電阻開關達到金屬導電絲的低電阻狀態(tài)，器件會立刻產生單極性電阻開關的性質。根據(jù)一系列的實驗結論，結合前人提出的理論模型，對阻變存儲器的機制進行全面的分析和解釋。
[Abstract]:With the development of science and technology and the improvement of semiconductor manufacturing technology, the information industry has developed rapidly. As a part of information technology, information storage has also made unprecedented progress. Traditionally, memory is based on the transistor's charge storage, which can not meet the needs of the rapid development of information technology in many cases. Therefore, it is urgent to find a high density, non-volatile, low-power next-generation memory. Among these memories, resistive memory has attracted much attention because of its many advantages, such as simple structure, fast read-write speed, low manufacturing cost, low power consumption, single device can be reduced to tens of nanometers, and so on. This novel resistance switching effect has been found in materials and semiconductors. With the development of research, many interesting new phenomena have been discovered: unipolar resistance switches and bipolar resistance switches can be transformed into each other under certain restrictive conditions; the electrical properties of resistive memory I-V curves are clockwise. Needle rotation and counterclockwise rotation are affected by the electric forming process, and the direction of rotation can be controlled by controlling the forming process. We found the existence of non-polar resistance switch and unconventional bipolar resistance switch in the research of resistance-variable memory, and obtained that unconventional bipolar resistance switch can be used under appropriate conditions. The discovery of these phenomena can help researchers to understand the formation mechanism of resistance switches more comprehensively. However, so far, no theoretical model can give a complete and clear explanation for these phenomena. Theoretical analysis is still lacking, and much work remains to be done. In this paper, thin film resistive switching devices are fabricated by laser pulse technology (PLD). The mechanism of resistive memory is studied by changing substrate conditions and introducing illumination. In addition, I have some new ideas and research results in the research of resistive switching logic gate circuit. Noodles:
1. The resistive memory devices with Au/STO/Pt structure were fabricated by pulsed laser deposition. The properties of the films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The electrical properties of the resistive devices were tested by Keiythley 2400. After the operation of the electroforming voltage, the resistive devices were tested. It shows good switching performance, including low threshold voltage, good fatigue resistance and retention characteristics. According to the measured electrical properties I-V curves, the obtained bipolar resistance switching properties are explained by the theory of trapping and de-trapping between defect and oxygen vacancy. When the logic value, on the basis of predecessors, using a simple resistive memory to achieve data access, combining the structure of modern random access memory and new resistive memory technology, to achieve a new resistive memory structure, and resistive memory and transistor memory for a simple comparison, in the chip function, pin role, how The storage aspect is introduced.
2. Au/Nb:STO/Pt and Au/Nb:STO/FTO sandwich structure resistive memory are fabricated. The similarities and differences between the two memory structures are analyzed by various characterization methods. The electrical I-V curves of the two memory structures are measured respectively. The different trend of the substrate curves will have obvious differences, which has a certain impact on the properties of resistive memory because of Schottky potential. The barrier plays an important role in the resistance switching phenomenon. The LED array lamp is used to illuminate the device and observe the common characteristics of the two different devices after illumination. We know that if the limiting current is set to generate enough heat in the first formation process, the resistance switch can also be made to the low resistance state of the metal conductive wire, and the device will immediately produce the properties of the unipolar resistance switch. The mechanism is comprehensively analyzed and explained.
【學位授予單位】：河南大學
【學位級別】：碩士
【學位授予年份】：2012
【分類號】：TP333
本文編號：2216093
[Abstract]:With the development of science and technology and the improvement of semiconductor manufacturing technology, the information industry has developed rapidly. As a part of information technology, information storage has also made unprecedented progress. Traditionally, memory is based on the transistor's charge storage, which can not meet the needs of the rapid development of information technology in many cases. Therefore, it is urgent to find a high density, non-volatile, low-power next-generation memory. Among these memories, resistive memory has attracted much attention because of its many advantages, such as simple structure, fast read-write speed, low manufacturing cost, low power consumption, single device can be reduced to tens of nanometers, and so on. This novel resistance switching effect has been found in materials and semiconductors. With the development of research, many interesting new phenomena have been discovered: unipolar resistance switches and bipolar resistance switches can be transformed into each other under certain restrictive conditions; the electrical properties of resistive memory I-V curves are clockwise. Needle rotation and counterclockwise rotation are affected by the electric forming process, and the direction of rotation can be controlled by controlling the forming process. We found the existence of non-polar resistance switch and unconventional bipolar resistance switch in the research of resistance-variable memory, and obtained that unconventional bipolar resistance switch can be used under appropriate conditions. The discovery of these phenomena can help researchers to understand the formation mechanism of resistance switches more comprehensively. However, so far, no theoretical model can give a complete and clear explanation for these phenomena. Theoretical analysis is still lacking, and much work remains to be done. In this paper, thin film resistive switching devices are fabricated by laser pulse technology (PLD). The mechanism of resistive memory is studied by changing substrate conditions and introducing illumination. In addition, I have some new ideas and research results in the research of resistive switching logic gate circuit. Noodles:
1. The resistive memory devices with Au/STO/Pt structure were fabricated by pulsed laser deposition. The properties of the films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The electrical properties of the resistive devices were tested by Keiythley 2400. After the operation of the electroforming voltage, the resistive devices were tested. It shows good switching performance, including low threshold voltage, good fatigue resistance and retention characteristics. According to the measured electrical properties I-V curves, the obtained bipolar resistance switching properties are explained by the theory of trapping and de-trapping between defect and oxygen vacancy. When the logic value, on the basis of predecessors, using a simple resistive memory to achieve data access, combining the structure of modern random access memory and new resistive memory technology, to achieve a new resistive memory structure, and resistive memory and transistor memory for a simple comparison, in the chip function, pin role, how The storage aspect is introduced.
2. Au/Nb:STO/Pt and Au/Nb:STO/FTO sandwich structure resistive memory are fabricated. The similarities and differences between the two memory structures are analyzed by various characterization methods. The electrical I-V curves of the two memory structures are measured respectively. The different trend of the substrate curves will have obvious differences, which has a certain impact on the properties of resistive memory because of Schottky potential. The barrier plays an important role in the resistance switching phenomenon. The LED array lamp is used to illuminate the device and observe the common characteristics of the two different devices after illumination. We know that if the limiting current is set to generate enough heat in the first formation process, the resistance switch can also be made to the low resistance state of the metal conductive wire, and the device will immediately produce the properties of the unipolar resistance switch. The mechanism is comprehensively analyzed and explained.
【學位授予單位】：河南大學
【學位級別】：碩士
【學位授予年份】：2012
【分類號】：TP333
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