MLC型NAND閃存中Polar碼的編譯碼研究
[Abstract]:The theory of channel polarization shows that code sequences that can reach capacity limit can be constructed under any binary input discrete memoryless channel. According to this theory, Arikan gives the construction method of Polar code, and proves that it has lower encoding and decode complexity. The good performance of Polar code opens up a new direction of channel coding technology. As a kind of non-volatile memory, flash memory has high storage density and low power consumption, so it has been widely used as the mainstream storage device. MLC type NAND flash memory can store two bits of data per unit cost. Make it more suitable for large capacity storage devices. However, because of the increase in the number of levels within the cell, the threshold voltage distribution in the cell is more compact, and the data is more prone to errors. Error correction code is a technology that can improve flash memory reliability and prolong flash memory life. In this paper, the encoding and decoding methods of Polar codes and the error control scheme in MLC type NAND flash memory are studied. The main work of this paper is summarized as follows: 1. This paper introduces the basic of flash memory, summarizes the physical structure and storage principle of MLC type NAND flash memory unit, and describes the common operation of flash memory: erasure, programming and reading. This paper studies the error model of flash memory, analyzes the causes of errors, and finds out that data retention errors and programming interference errors are the two most common types of errors in flash memory. The channel polarization phenomenon is analyzed in detail, and the coding method of Polar code and the simulation realization of serial cancellation decoding algorithm under AWGNBEC and BSC channel are given. The simulation results show that the longer the code length of the code is, the better the performance of the decoding algorithm is. 3. The distribution of threshold voltage of MLC type NAND flash memory cell under P / E cycle is analyzed. The hard sensing and soft sensing techniques are used to read MLC, and the simulation implementation of Polar code encoding and decoding algorithm in NAND flash memory is presented. Simulation results show that compared with hard sensing, soft sensing improves the durability of MLC significantly.
【學位授予單位】:西安電子科技大學
【學位級別】:碩士
【學位授予年份】:2015
【分類號】:TP333
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