本文選題：微波等離子體　切入點(diǎn)：化學(xué)氣相沉積　出處：《武漢工程大學(xué)》2015年碩士論文

【摘要】：超納米金剛石作為納米金剛石領(lǐng)域一個(gè)極其重要的分支,在硬度,表面光滑度,摩擦系數(shù),斷裂韌性,電學(xué)性能,鑄形兼容性等方面更加顯著,可在機(jī)械涂層,場(chǎng)發(fā)射及電化學(xué),微機(jī)電系統(tǒng)(MEMS),生物醫(yī)學(xué),聲學(xué),光學(xué)等領(lǐng)域發(fā)揮重要作用。國(guó)外學(xué)者經(jīng)過十多年的研究和努力,在超納米金剛石的制備和性能研究方面取得了極大的進(jìn)步和發(fā)展。相比之下,國(guó)內(nèi)相關(guān)研究尚屬起步,極其缺乏超納米金剛石膜制備工藝方面的系統(tǒng)研究。本文利用自制10kW-MPCVD裝置,以CH_4/Ar/H2為氣源制備了超納米金剛石膜,同時(shí)也利用韓國(guó)Woosinent-R2.0型MPCVD裝置,以CH_4/N_2和CH_4/N_2/H2為氣源生長(zhǎng)了摻氮超納米金剛石膜,詳細(xì)論述了工藝參數(shù)對(duì)生長(zhǎng)不同超納米金剛石膜的影響,并成功的沉積出直徑為50mm的大面積摻氮超納米金剛石膜。實(shí)驗(yàn)研究結(jié)果表明:1、在利用CH_4/Ar作為氣源生長(zhǎng)超納米金剛石時(shí),為保證等離子體的穩(wěn)定性和活性基團(tuán)能量和密度,必須添加少量的氫氣和采用較低的功率和高氣壓(10kPa)條件下進(jìn)行。2、當(dāng)在Ar/CH_4環(huán)境中添加少量氫氣生長(zhǎng)超納米金剛石時(shí),隨著氫氣濃度的減小,薄膜的晶粒尺寸減小,薄膜中金剛石相含量降低,非晶碳和石墨含量增大,薄膜趨向(111)面優(yōu)先生長(zhǎng)。3、當(dāng)利用CH_4/N_2作為氣源生長(zhǎng)摻氮超納米金剛石膜時(shí),隨著CH_4/N_2氣源濃度比的減小薄膜表面的團(tuán)聚體外形“針狀”逐漸演變?yōu)轭w粒狀,薄膜晶粒尺寸增大,薄膜的致密度和質(zhì)量提高,而導(dǎo)電性變差。4、當(dāng)在CH_4/N_2環(huán)境中添加少量氫氣生長(zhǎng)摻氮超納米金剛石時(shí),隨著氫氣濃度的增大,薄膜的晶粒尺寸增大,雜質(zhì)和缺陷及生長(zhǎng)速率降低,由G峰漂移引起的壓應(yīng)力也隨之減小,薄膜的質(zhì)量提高但導(dǎo)電性變差。
[Abstract]:As a very important branch of nanocrystalline diamond field, ultrananocrystalline diamond is more prominent in hardness, surface smoothness, friction coefficient, fracture toughness, electrical properties, cast compatibility and so on.Field emission and electrochemistry, MEMS, MEMS, biomedicine, acoustics, optics and other fields play an important role.After more than ten years of research and efforts, foreign scholars have made great progress in the preparation and properties of ultrananocrystalline diamond.In contrast, the domestic related research is still at the beginning, and the systematic research on the preparation process of ultra-nano diamond films is extremely lacking.In this paper, ultrananocrystalline diamond films were prepared by using self-made 10kW-MPCVD apparatus and CH_4/Ar/H2 as gas source. At the same time, nitrogen-doped ultrananocrystalline diamond films were grown using CH_4/N_2 and CH_4/N_2/H2 as gas source in Korea Woosinent-R2.0 type MPCVD device.The effects of process parameters on the growth of different ultrananocrystalline diamond films were discussed in detail, and a large area of nitrogen-doped nanocrystalline diamond films with diameter of 50mm were successfully deposited.The experimental results show that in order to ensure the stability of the plasma and the energy and density of the active group, the nanocrystalline diamond is grown by using CH_4/Ar as the gas source.It is necessary to add a small amount of hydrogen and use low power and high pressure of 10 KPA. When adding a small amount of hydrogen to the Ar/CH_4 environment to grow ultrananocrystalline diamond, the grain size of the film decreases with the decrease of hydrogen concentration.The content of diamond phase in the film decreased, the content of amorphous carbon and graphite increased, and the film tended to have preferential growth on the surface of 111). When CH_4/N_2 was used as the gas source to grow the nitrogen-doped ultrananocrystalline diamond film,With the decrease of the concentration ratio of CH_4/N_2 gas source, the aggregate shape on the surface of the film becomes granular, the grain size of the film increases, and the density and quality of the film increase.However, with the increase of hydrogen concentration, the grain size of the film increases, and the impurity, defect and growth rate decrease with the increase of hydrogen concentration.The compressive stress caused by G peak drift also decreases, and the quality of the film is improved, but the conductivity becomes worse.
【學(xué)位授予單位】：武漢工程大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ163

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