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Radiation-induced 1/f noise degradation of PNP bipolar junct

發(fā)布時(shí)間:2022-01-17 15:02
  It is found that ionizing-radiation can lead to the base current and the 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region of the emitter-base junction is the main source of the base surface 1/f noise. A model is developed which identifies the parameters and describes their interactive contributions to the recombination current at the surface of the space charge region. Based on the theory of carrier number fluc... 

【文章來源】:Chinese Physics B. 2016,25(04)EISCI

【文章頁數(shù)】:7 頁

【參考文獻(xiàn)】:
期刊論文
[1]基于1/f噪聲的NPN晶體管輻照感生電荷的定量分離[J]. 趙啟鳳,莊奕琪,包軍林,胡為.  物理學(xué)報(bào). 2015(13)



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