【摘要】：隨著電子電路的高速發(fā)展,集成電路由于其具有體積小、重量輕、功耗小、特性好、高密度集成等許多分立元件電路無(wú)法比擬的優(yōu)點(diǎn),在各類電路設(shè)計(jì)中得到了越來(lái)越廣泛的運(yùn)用。眾所周知,我們的空間電磁環(huán)境日益復(fù)雜,集成電路器件越來(lái)越多的受到外界電磁的干擾。因此,集成電路在實(shí)際運(yùn)用中的抗電磁干擾性成為了研究熱點(diǎn)。為研究電磁脈沖對(duì)典型集成電路器件的電磁干擾問(wèn)題與典型集成電路器件對(duì)電磁脈沖的損傷效應(yīng)問(wèn)題,論文運(yùn)用實(shí)驗(yàn)方法研究了典型集成電路器件在強(qiáng)電磁脈沖注入下的擊穿損傷效應(yīng),運(yùn)用仿真方法研究了電磁波輻射情況下的集成電路的敏感性問(wèn)題。首先,介紹了幾種常見的電磁脈沖以及它們各自的特點(diǎn),分析并總結(jié)了集成電路的電磁損傷機(jī)理,然后選取目前運(yùn)用較為廣泛的兩種典型集成電路器件,在其源-地端、正向輸入-地端、負(fù)向輸入-地端分別注入雷擊浪涌脈沖,測(cè)試集成電路器件在三個(gè)不同的測(cè)試參數(shù)：脈沖電壓幅值、脈沖連續(xù)注入個(gè)數(shù)、脈沖注入間隔時(shí)間下是否發(fā)生擊穿,當(dāng)擊穿發(fā)生時(shí),記錄此刻的測(cè)試參數(shù)和器件輸出端瞬時(shí)的電壓波形。然后,計(jì)算在一定注入電壓幅值下器件的損傷概率。為了節(jié)省計(jì)算耗時(shí),在計(jì)算部分輸入脈沖電壓的損傷概率后,運(yùn)用BP神經(jīng)網(wǎng)絡(luò)對(duì)其余輸入脈沖電壓的損傷概率進(jìn)行預(yù)測(cè)。然后,對(duì)所有數(shù)據(jù)進(jìn)行分析處理,得到各端對(duì)的損傷閾值電壓、集成電路器件的最敏感端對(duì),運(yùn)用Matlab編程,得到器件損傷情況與三個(gè)不同測(cè)試參數(shù)之間的關(guān)系曲線、器件損傷概率與電壓之間的關(guān)系曲線與函數(shù)表達(dá)式。最后,研究電磁波對(duì)集成電路器件輻射干擾的情況,由于集成電路大多被置于一個(gè)屏蔽腔體內(nèi),而屏蔽腔體出于散熱、通風(fēng)等原因,均需要在屏蔽腔體內(nèi)設(shè)計(jì)孔縫。這樣,就把問(wèn)題轉(zhuǎn)化為帶縫屏蔽腔體內(nèi)集成電路的電磁輻射干擾研究。論文首先建立了電磁波輻照內(nèi)置集成電路的帶縫屏蔽腔體的模型,并提出了一種場(chǎng)路結(jié)合,對(duì)帶縫屏蔽腔體內(nèi)集成電路器件電磁干擾仿真分析的新方法。該方法采用小孔耦合理論處理電磁波與屏蔽層孔縫耦合的關(guān)系,求解孔縫處的耦合電壓,即為等效的干擾源。在Pspice軟件中,建立集成電路的模型,將等效的干擾源作為集成電路的輸入,求得電路輸出端的電壓響應(yīng),即由電磁輻射引起的干擾電壓。
[Abstract]:With the rapid development of electronic circuits, integrated circuits have many advantages, such as small volume, light weight, low power consumption, good characteristics, high density integration and so on. In all kinds of circuit design has been more and more widely used. As we all know, our space electromagnetic environment is becoming more and more complex, integrated circuit devices are more and more subject to external electromagnetic interference. Therefore, the electromagnetic interference resistance of integrated circuits in practical application has become a research hotspot. In order to study the electromagnetic interference problem of typical integrated circuit devices caused by electromagnetic pulse and the damage effect of typical integrated circuit device to electromagnetic pulse, In this paper, the breakdown damage effect of typical integrated circuit devices under strong electromagnetic pulse injection is studied by means of experiments, and the sensitivity of integrated circuits under electromagnetic wave radiation is studied by simulation method. Firstly, several kinds of common electromagnetic pulses and their respective characteristics are introduced, and the electromagnetic damage mechanism of integrated circuits is analyzed and summarized. Then two typical integrated circuit devices, which are widely used at present, are selected at the source and ground end. The lightning surge pulse was injected into the forward input ground end and the negative input ground end to test three different test parameters of integrated circuit device: pulse voltage amplitude, pulse continuous injection number, whether breakdown occurred at the pulse injection interval. When the breakdown occurs, record the current test parameters and instantaneous voltage waveform at the output end of the device. Then, the damage probability of the device is calculated at a certain injection voltage amplitude. In order to save calculation time, after calculating the damage probability of partial input pulse voltage, BP neural network is used to predict the damage probability of other input pulse voltage. Then, the damage threshold voltage of each end pair and the most sensitive pair of integrated circuit devices are obtained by analyzing and processing all the data. Using Matlab programming, the relationship curve between the damage of the device and three different test parameters is obtained. The relation curve and function expression between the damage probability and voltage of the device. Finally, the interference of electromagnetic wave to integrated circuit devices is studied. Because the integrated circuit is mostly placed in a shielding cavity, the shielding cavity needs to design holes in the shielding cavity for the reasons of heat dissipation, ventilation and so on. In this way, the problem is transformed into the study of electromagnetic radiation interference of integrated circuits with slot shielding cavity. In this paper, the model of electromagnetic wave irradiated cavity with slot shielding is established, and a new method of electromagnetic interference simulation is proposed. In this method, the relationship between electromagnetic wave and aperture coupling in shielding layer is treated by using the theory of small hole coupling, and the coupling voltage at the hole seam is solved, which is the equivalent interference source. In Pspice software, the model of integrated circuit is established, the equivalent interference source is taken as the input of the integrated circuit, and the voltage response of the output end of the circuit is obtained, that is, the interference voltage caused by electromagnetic radiation.
【學(xué)位授予單位】：華北電力大學(xué)(北京)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN03;TN40

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 高紅;;BP神經(jīng)網(wǎng)絡(luò)學(xué)習(xí)率的優(yōu)化方法[J];長(zhǎng)春師范學(xué)院學(xué)報(bào)(自然科學(xué)版);2010年04期

2 陳棟;許黎明;;高功率微波武器對(duì)C~4ISR系統(tǒng)毀傷效應(yīng)研究[J];裝備環(huán)境工程;2010年02期

3 宋振宇;王秋彥;丁小峰;;BP神經(jīng)網(wǎng)絡(luò)訓(xùn)練中的實(shí)際問(wèn)題研究[J];海軍航空工程學(xué)院學(xué)報(bào);2009年06期

4 楊建光;武占成;;三極管2SC3312方波電磁脈沖效應(yīng)實(shí)驗(yàn)研究[J];河北北方學(xué)院學(xué)報(bào)(自然科學(xué)版);2009年02期

5 李翱翔;陳健;;BP神經(jīng)網(wǎng)絡(luò)參數(shù)改進(jìn)方法綜述[J];電子科技;2007年02期

6 周懷安;杜正偉;龔克;;雙極型晶體管損壞與強(qiáng)電磁脈沖注入位置的關(guān)系[J];強(qiáng)激光與粒子束;2006年04期

7 周懷安;杜正偉;龔克;;雙極型晶體管在強(qiáng)電磁脈沖作用下的瞬態(tài)響應(yīng)[J];強(qiáng)激光與粒子束;2005年12期

8 周金山,劉國(guó)治,彭鵬,王建國(guó);不同形狀孔縫微波耦合的實(shí)驗(yàn)研究[J];強(qiáng)激光與粒子束;2004年01期

9 夏昌明,路宏敏,周力;金屬腔體孔陣電磁耦合的數(shù)值分析[J];電子質(zhì)量;2003年08期

10 陳修橋,張建華,胡以華;電磁脈沖與窄縫腔體耦合共振特性分析[J];強(qiáng)激光與粒子束;2003年05期

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