本文選題：溫度傳感器 + ICP刻蝕��； 參考：《合肥工業(yè)大學》2015年碩士論文

【摘要】：隨著MEMS傳感器應用越來越普及,在對其加工工藝的要求也在不斷提高。作為MEMS器件加工的一項關鍵技術——ICP刻蝕技術,因其刻蝕過程自動化程度高、刻蝕側(cè)壁垂直度好、大面積刻蝕均勻性好及污染少等優(yōu)點,目前被廣泛應用于體硅MEMS工藝中的高深寬比刻蝕。但是由于ICP刻蝕技術的機理比較復雜,影響刻蝕結(jié)果的工藝參數(shù)較多,所以ICP刻蝕技術總體上還不夠成熟,具體表現(xiàn)在沒有具體的ICP刻蝕仿真工具軟件,刻蝕工藝參數(shù)不易調(diào)整,對刻蝕結(jié)果的預測不夠準確等,所以現(xiàn)在工藝上主要通過大量的實驗來對參數(shù)進行調(diào)整、驗證及改進,已達到刻蝕的要求。本論文是在本課題組前期對不同形貌結(jié)構的刻蝕工藝進行研究的基礎上,在設計溫度傳感器梳齒結(jié)構的加工過程中,確立的ICP刻蝕工藝實驗目的及工藝參數(shù)調(diào)整的方向。實驗首先研究ICP刻蝕的各參數(shù)對其刻蝕結(jié)果的影響,重點研究刻蝕／鈍化周期、氣體流量、極板功率和偏置電壓等條件因素對刻蝕結(jié)果產(chǎn)生的影響,最后采用正交實驗法設計實驗方案。分別優(yōu)化得到了三種尺寸槽寬刻蝕到所需深度時,其側(cè)壁垂直度達到最優(yōu)的刻蝕參數(shù)。再將最優(yōu)工藝參數(shù)應用于某陀螺儀的實際制備中,得到了較為理想的刻蝕形貌,陀螺儀的各項性能指標滿足了傳感器的實用化需求。另外,ICP刻蝕技術在對硅、二氧化硅材料以及Ⅲ-V族化合物等材料刻蝕方面的應用越來越多,并獲得了很好的效果。MEMS的未來無可限量,ICP刻蝕技術必將越發(fā)成熟,在微納電子器件的加工中發(fā)揮應有的作用。
[Abstract]:With the application of MEMS sensors becoming more and more popular, the requirements of its processing technology are also increasing.As a key technology of MEMS device processing, MEMS etching technology has many advantages, such as high degree of automatization of etching process, good vertical degree of etching sidewall, good uniformity of large area etching and less pollution, etc.At present, it is widely used in bulk silicon MEMS process with high aspect ratio etching.However, because of the complex mechanism of ICP etching technology and the large number of technological parameters that affect the etching results, the ICP etching technology is not mature enough on the whole. The concrete manifestation is that there is no specific ICP etching simulation tool software.The parameters of etching process are not easy to adjust and the prediction of etching results is not accurate. So the process mainly adjusts, verifies and improves the parameters through a large number of experiments, which has met the requirements of etching.This paper is based on the study of etching technology of different morphology and structure in our group, and establishes the experimental purpose of ICP etching process and the adjustment direction of process parameters in the process of designing the comb structure of temperature sensor.In the experiment, the influence of various parameters of ICP etching on the etching results is studied. The effects of etching / passivation period, gas flow rate, plate power and bias voltage on the etching results are studied.Finally, the orthogonal experiment method is used to design the experimental scheme.The optimum etching parameters are obtained when the width of the three sizes etched to the desired depth.The optimum process parameters are applied to the practical preparation of a gyroscope, and the better etching morphology is obtained. The performance of the gyroscope meets the practical needs of the sensor.In addition, ICP etching technology has been used more and more in etching silicon, silica and 鈪，

本文編號：1772380