本文選題：GaSb + MOCVD��； 參考：《長(zhǎng)春理工大學(xué)》2017年碩士論文

【摘要】：本文通過對(duì)微光夜視光陰極理論及其參數(shù)表征的分析和研究,選取與GaAs同處于III-V族的GaSb材料作為研究對(duì)象,利用MOCVD技術(shù)將其制備成未被激活的反射式光陰極發(fā)射層薄膜結(jié)構(gòu)。制備過程中選取反應(yīng)溫度T、MO源氣相V/III為參數(shù)變量,結(jié)合XRD及SEM等測(cè)試手段研究生長(zhǎng)過程中不同工藝參數(shù)對(duì)GaSb發(fā)射層外延質(zhì)量的影響,并找到GaSb發(fā)射層薄膜外延生長(zhǎng)的優(yōu)化參數(shù)組合。接著按照實(shí)驗(yàn)設(shè)計(jì)制備均勻式摻雜和梯度摻雜兩種不同摻雜結(jié)構(gòu)的GaSb發(fā)射層薄膜,并利用霍爾測(cè)試、SEM、AFM等測(cè)試手段驗(yàn)證其制備質(zhì)量及設(shè)計(jì)參數(shù)。最后對(duì)制備的不同摻雜結(jié)構(gòu)的GaSb發(fā)射層樣本進(jìn)行了表面光電壓譜測(cè)試,測(cè)試其光譜響應(yīng)范圍,并比較不同摻雜結(jié)構(gòu)對(duì)其光電性能的影響,從而探索GaSb材料是否具備制備高性能微光夜視光陰極的可能,為之后GaSb光陰極激活實(shí)驗(yàn)及透射式GaSb光陰極的參數(shù)模擬、制備工藝提供支撐。通過實(shí)驗(yàn)得出:T=510℃、P=100mbar、V/III=2是GaSb發(fā)射層薄膜制備的一個(gè)優(yōu)化參數(shù)組合。通過SEM與AFM測(cè)試顯示在此參數(shù)組合下制備出的GaSb發(fā)射層樣品表面接近鏡面,在1μmⅹ1μm的范圍內(nèi)高度起伏不超過5.3nm。表面光電壓譜測(cè)試顯示GaSb發(fā)射層樣品長(zhǎng)波響應(yīng)在1.7μm左右,已延伸至中紅外波段,初步具備成為新型紅擴(kuò)展陰極的條件。在選取的摻雜濃度與厚度范圍內(nèi),表面光電壓隨著發(fā)射層厚度的增加而增加,隨著摻雜濃度的增加而減小。與均勻式摻雜結(jié)構(gòu)相比梯度摻雜結(jié)構(gòu)更有助于體內(nèi)光生電子向表面輸運(yùn)。
[Abstract]:Based on the analysis and study of the photocathode theory and its parameter characterization of low light level night vision (LLL) night vision, GaSb materials, which are in III-V family with GaAs, are selected as the object of study. The photocathode emitter thin films are fabricated by MOCVD technique and are not activated.The effect of different process parameters on the epitaxial quality of GaSb emitter layer was studied by means of XRD and SEM, and the reaction temperature TMO source gas phase V/III was selected as the parameter variable during the preparation process.The optimal parameters for the epitaxial growth of GaSb emission film are also found.Then the uniform doping and gradient doped GaSb emission layer thin films were prepared according to the experimental design. The preparation quality and design parameters of the films were verified by Hall test and SEMMA-AFM.Finally, the surface photovoltage spectra of different doped GaSb emission layer samples were measured, the spectral response range was tested, and the effects of different doped structures on their photoelectric properties were compared.In order to explore whether the GaSb material has the possibility of preparing the high performance low-light night vision photocathode, it provides the support for the later GaSb photocathode activation experiment and the parameter simulation of the transmission GaSb photocathode, and the preparation process.The experimental results show that the ratio of 10 鈩，

本文編號(hào)：1756906