本文選題：IGBT模塊　切入點(diǎn)：結(jié)溫　出處：《河北工業(yè)大學(xué)》2015年碩士論文

【摘要】：功率半導(dǎo)體器件IGBT(絕緣柵雙極晶體管)高頻化、大功率化、集成化的發(fā)展,使得IGBT模塊承載更高的工作溫度和溫度沖擊,其各層材料的熱物性因往復(fù)膨脹收縮而疲勞退化,表現(xiàn)為給定功率及環(huán)境應(yīng)力的模塊工作溫度升高,模塊對(duì)功率應(yīng)力、環(huán)境應(yīng)力及系統(tǒng)暫態(tài)過(guò)程的容適性變差,模塊的運(yùn)行安全余量降低。當(dāng)模塊的實(shí)際工作溫度超過(guò)極限安全工作溫度時(shí),就會(huì)發(fā)生不可逆轉(zhuǎn)的失效。因此,研究IGBT模塊的傳熱特性及其退化規(guī)律,對(duì)于提高IGBT模塊乃至電力電子設(shè)備的性能及可靠性有重要意義。擬對(duì)IGBT模塊的傳熱特性及其退化趨勢(shì)進(jìn)行理論、試驗(yàn)及仿真研究。首先,深入分析IGBT模塊的結(jié)構(gòu)和工作原理,探討功率應(yīng)力作用下IGBT模塊的發(fā)熱機(jī)理和傳熱特性的退化機(jī)理;研究能反映IGBT模塊傳熱特性退化的熱敏電參數(shù)、溫度參數(shù)等物理量,選擇與功率及環(huán)境應(yīng)力無(wú)關(guān)、僅反映模塊結(jié)構(gòu)及材料屬性的熱阻作為傳熱特性的退化特征參數(shù);根據(jù)出廠參數(shù)確定熱阻下限,根據(jù)極限安全結(jié)溫及降額使用規(guī)范確定熱阻上限,建立模糊退化模型H(R)。其次,研發(fā)開(kāi)關(guān)頻率可調(diào)、負(fù)載電流可控的單相IGBT模塊開(kāi)關(guān)控制及溫度測(cè)試系統(tǒng)。該系統(tǒng)能對(duì)IGBT模塊的集電極電流、集射極電壓、工作頻率及占空比進(jìn)行動(dòng)態(tài)調(diào)節(jié);采用DS18B20溫度傳感器配合無(wú)線數(shù)據(jù)采集、傳輸模塊實(shí)現(xiàn)殼溫的遠(yuǎn)程實(shí)時(shí)監(jiān)控;采用光纖測(cè)溫系統(tǒng)實(shí)現(xiàn)結(jié)溫的實(shí)時(shí)在線監(jiān)測(cè);采用泰克高速記憶示波器實(shí)現(xiàn)集射極電壓和集電極電流開(kāi)通關(guān)斷過(guò)程的觸發(fā)錄波;設(shè)計(jì)完成4個(gè)電流等級(jí)、4個(gè)頻率等級(jí)的正交試驗(yàn),對(duì)熱敏電參數(shù)和溫度試驗(yàn)數(shù)據(jù)進(jìn)行了分析。再次,以實(shí)測(cè)平均功率損耗作為熱源,對(duì)IGBT模塊進(jìn)行三維穩(wěn)態(tài)和瞬態(tài)ANSYS仿真研究。仿真得到模塊的溫度場(chǎng)分布、結(jié)溫及殼溫曲線;將實(shí)測(cè)殼溫曲線與仿真曲線進(jìn)行比對(duì),驗(yàn)證了試驗(yàn)結(jié)果和仿真結(jié)果的一致性。最后,研究熱阻網(wǎng)絡(luò)模型及熱阻測(cè)試方法,基于實(shí)測(cè)功率損耗、結(jié)溫和殼溫對(duì)熱阻參數(shù)進(jìn)行提取;根據(jù)模糊退化模型H(R)對(duì)模塊疲勞狀態(tài)進(jìn)行定量評(píng)估。
[Abstract]:With the development of high frequency, high power and integration of IGBT (Insulated Gate Bipolar Transistor), the IGBT module is carrying higher working temperature and temperature shock, and the thermal properties of each layer of IGBT are degenerated by reciprocating expansion and contraction.The performance is that the working temperature of the module with given power and environmental stress increases, the tolerance of the module to the power stress, environmental stress and transient process of the system becomes poor, and the safety margin of the module operation is reduced.When the actual working temperature of the module exceeds the limit safe working temperature, irreversible failure will occur.Therefore, it is of great significance to study the heat transfer characteristics and degradation law of IGBT modules for improving the performance and reliability of IGBT modules and even power electronic equipment.The heat transfer characteristics and degradation trend of IGBT module are studied theoretically, experimentally and simulated.First of all, the structure and working principle of IGBT module are analyzed in depth, the heating mechanism and heat transfer degradation mechanism of IGBT module under power stress are discussed, the thermal sensitive electrical parameters, temperature parameters and other physical quantities which can reflect the degradation of heat transfer characteristics of IGBT module are studied.The thermal resistance, which is independent of power and environmental stress, only reflects the thermal resistance of the module structure and material properties as the degradation characteristic parameter of heat transfer characteristics, determines the lower limit of thermal resistance according to the factory parameters, and determines the upper limit of thermal resistance according to the limit safety junction temperature and the usage code of reducing amount.A fuzzy degenerative model was established.Secondly, the switch control and temperature measurement system of single phase IGBT module with adjustable switching frequency and controllable load current is developed.The system can dynamically adjust collector current, collector voltage, working frequency and duty cycle of IGBT module, and realize remote real-time monitoring of shell temperature by using DS18B20 temperature sensor and wireless data acquisition.The real-time on-line monitoring of junction temperature is realized by using optical fiber temperature measurement system, and the trigger recording process of collector voltage and collector current switching off is realized by using Taike high-speed memory oscilloscope.The orthogonal test of four current levels and four frequency levels was designed and the data of thermoelectric parameters and temperature tests were analyzed.Thirdly, using the measured average power loss as the heat source, the 3D steady-state and transient ANSYS simulation of the IGBT module is carried out.The temperature field distribution, junction temperature and shell temperature curves of the module are obtained by simulation, and the measured shell temperature curve is compared with the simulation curve to verify the consistency between the experimental results and the simulation results.Finally, the thermal resistance network model and the thermal resistance testing method are studied. Based on the measured power loss, the thermal resistance parameters are extracted from the junction temperature and the shell temperature, and the fatigue state of the module is quantitatively evaluated according to the fuzzy degradation model (HGR).
【學(xué)位授予單位】：河北工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN322.8

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 唐勇;陳明;汪波;;電力電子器件短時(shí)脈沖工作的結(jié)溫特性研究[J];電力電子技術(shù);2010年03期

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本文編號(hào)：1694052