【摘要】：光導(dǎo)開關(guān)全稱為光控光導(dǎo)半導(dǎo)體開關(guān),因其觸發(fā)抖動(dòng)小、極高的響應(yīng)速度、極高的功率容量、耐壓能力強(qiáng)、功耗低、寄生電感電容小、動(dòng)態(tài)范圍大等優(yōu)良的電學(xué)特性,加之開關(guān)體積小、結(jié)構(gòu)簡(jiǎn)單而受到國(guó)內(nèi)外研究者的重視,成為脈沖功率應(yīng)用技術(shù)領(lǐng)域的一枝新秀。碳化硅材料與傳統(tǒng)的半導(dǎo)體材料相比具有禁帶寬度大、擊穿場(chǎng)強(qiáng)高、介電常數(shù)大、熱導(dǎo)率高和抗輻射能力強(qiáng)等優(yōu)異性質(zhì),被認(rèn)為是最適合制備超快、大功率、耐高溫的光電子器件的材料。現(xiàn)在大尺寸高質(zhì)量的碳化硅生長(zhǎng)技術(shù)日趨成熟,將來(lái)必定大規(guī)模應(yīng)用到脈沖功率器件、微電子器件和電力電子器件制造中。本文使用半絕緣碳化硅作為光導(dǎo)開關(guān)的襯底材料,兩者之間的珠聯(lián)璧合必將促進(jìn)超快大功率光導(dǎo)開關(guān)的發(fā)展。 本文首先介紹了光導(dǎo)開關(guān)的研究背景、工作原理及發(fā)展歷史,研究了碳化硅材料對(duì)光導(dǎo)開關(guān)的影響。在大量文獻(xiàn)調(diào)研的基礎(chǔ)之上,制定了碳化硅光導(dǎo)開關(guān)研究的技術(shù)路線圖。根據(jù)技術(shù)路線圖,利用磁控濺射設(shè)備在n型4H-SiC襯底的(000-1)面上沉積了Ti金屬電極,研究了在退火處理過(guò)程中不同的電極放置方式對(duì)接觸性能的影響。當(dāng)實(shí)驗(yàn)樣品的電極面朝著硅托退火時(shí),樣品表現(xiàn)出良好的歐姆接觸性能,否則就沒(méi)有歐姆接觸性質(zhì)。利用X射線衍射(XRD)、X射線光電子能譜(XPS)、掃描電子顯微鏡(SEM)和原子力電子顯微鏡(AFM)對(duì)其界面相結(jié)構(gòu)、組份、電極薄膜厚度和表面形貌進(jìn)行了研究分析。在退火處理過(guò)程中從硅靶額外引入的硅元素對(duì)形成歐姆接觸起了關(guān)鍵作用。接著在4H-SiC的C面上制備了Si/Ti/SiC體系和Si面上制備了Ni/SiC體系的歐姆接觸,利用線性傳輸線法(TLM)計(jì)算了比接觸電阻率,并分析了表面形貌對(duì)歐姆接觸性質(zhì)的影響。 本文在制備歐姆接觸的研究基礎(chǔ)上,在半絕緣碳化硅襯底上制備了同面橫向結(jié)構(gòu)的光導(dǎo)開關(guān),并對(duì)光導(dǎo)開關(guān)的電學(xué)性能進(jìn)行了分析。針對(duì)SiC光導(dǎo)開關(guān)的特點(diǎn),搭建了測(cè)試平臺(tái),利用532nm波長(zhǎng)的Nd:YAG激光器做觸發(fā)光源,著重研究了同面型橫向結(jié)構(gòu)的光導(dǎo)開關(guān)的電學(xué)性能,獲得了開關(guān)導(dǎo)通電脈沖的下降沿時(shí)間小于3ns,上升沿時(shí)間小于13ns,導(dǎo)通電脈沖信號(hào)的脈寬穩(wěn)定在12ns,與觸發(fā)激光電脈沖信號(hào)的脈寬一致。
[Abstract]:The photoconductive switch is called optically controlled photoconductive semiconductor switch, because of its excellent electrical properties, such as low trigger jitter, high response speed, high power capacity, high voltage resistance, low power consumption, small parasitic inductance and capacitance, large dynamic range, etc. In addition, the switch is small in size, simple in structure and paid attention to by researchers at home and abroad, so it has become a new star in the field of pulse power application technology. Compared with traditional semiconductor materials, silicon carbide has many excellent properties, such as wide band gap, high breakdown field strength, large dielectric constant, high thermal conductivity and strong radiation resistance, etc. It is considered to be the most suitable for preparation of ultra-fast and high-power materials. High temperature resistant materials for optoelectronic devices. Nowadays, the technology of silicon carbide growth with large size and high quality is becoming more and more mature, and it will be used in the manufacture of pulse power devices, microelectronic devices and power electronic devices on a large scale in the future. In this paper, the semi-insulating silicon carbide is used as the substrate material for photoconductive switch. The perfect combination between the two materials will promote the development of ultra-fast and high-power photoconductive switch. In this paper, the research background, working principle and development history of photoconductive switch are introduced, and the influence of silicon carbide on photoconductive switch is studied. Based on a large amount of literature, a technical roadmap for the study of silicon carbide photoconductive switches is developed. According to the technical roadmap, Ti metal electrodes were deposited on (000-1) surfaces of n-type 4H-SiC substrates by magnetron sputtering equipment. The effects of different electrode placement methods on the contact properties during annealing were studied. When the electrode surface of the experimental sample is annealed towards the silicon holder, the sample exhibits good ohmic contact performance, otherwise, there is no ohmic contact property. The interfacial phase structure, composition, electrode film thickness and surface morphology were studied by X-ray diffraction (XRD) (XRD), X ray photoelectron spectroscopy (XPS),) scanning electron microscope (SEM) and atomic force electron microscopy (AFM). The addition of silicon element from silicon target plays a key role in the formation of ohmic contact during annealing. Then the ohmic contacts of Si/Ti/SiC system and Ni/SiC system were prepared on C plane of 4H-SiC and Ni/SiC system on Si surface. The specific contact resistivity was calculated by (TLM) method. The influence of surface morphology on ohmic contact properties was analyzed. Based on the study of ohmic contact, the photoconductive switch with the same plane transverse structure was fabricated on semi-insulating silicon carbide substrate, and the electrical properties of the photoconductive switch were analyzed. According to the characteristics of SiC photoconductive switch, a testing platform is set up. The electrical properties of the photoconductive switch with the same plane transverse structure are studied by using the Nd:YAG laser of 532nm wavelength as the trigger light source. It is obtained that the duration of the on-off pulse is less than 3ns, the rising edge time is less than 13ns, and the pulse width of the turn-on pulse signal is stable at 12ns, which is the same as the pulse width of the triggered laser pulse signal.
【學(xué)位授予單位】：上海師范大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM564

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