【摘要】：近年來,隨著太陽能技術(shù)的蓬勃發(fā)展,在人們的日常生活中,太陽能電池應用的領(lǐng)域越來越廣泛,而目前應用最多的就是硅太陽能電池。而如何降低晶硅太陽能電池的表面復合速率,提高光電轉(zhuǎn)換效率成為目前人們研究的熱點。 氧化鋁薄膜具有介電常數(shù)高,熱穩(wěn)定性好,制備溫度較低等優(yōu)點,而且能有效降低晶硅表面的復合速率,提升電池轉(zhuǎn)換效率,非常適合作為晶硅太陽能電池表面的鈍化薄膜。 本文主要研究了利用溶膠-凝膠技術(shù)在晶硅太陽能電池上制備氧化鋁薄膜,并對幾種主要的鈍化薄膜的鈍化機理進行研究,通過對實驗過程中工藝參數(shù)的控制來得到不同質(zhì)量的氧化鋁薄膜,并對制備的氧化鋁薄膜進行研究測試分析。 本文首先介紹了太陽能電池及太陽能電池表面鈍化的發(fā)展狀況,闡述了太陽能電池原理和太陽能電池表面鈍化的原理,以及C-V法測試MIS結(jié)構(gòu)的原理。成功在晶硅太陽能電池表面制備出高性能的氧化鋁鈍化薄膜,其中,測試得到的薄膜參數(shù)為：透過率達到95.6%,截止頻率約為2×105Hz,界面態(tài)密度為5.82×1011cm-2eV-1。通過分析得到氧化鋁薄膜的鈍化效果與制作過程中的工藝參數(shù)密切相關(guān)。在一定條件下,氧化鋁薄膜的厚度越厚,溶液濃度越高,退火溫度越高,退火時間越長,得到的薄膜質(zhì)量會越好,對晶硅太陽能電池表面的鈍化效果也就越優(yōu)異。
[Abstract]:In recent years, with the rapid development of solar energy technology, the application of solar cells is more and more extensive in people's daily life, and the most widely used is silicon solar cells. However, how to reduce the surface recombination rate of silicon solar cells and improve the photoelectric conversion efficiency has become a hot topic. Alumina thin films have the advantages of high dielectric constant, good thermal stability, low preparation temperature, and can effectively reduce the surface recombination rate of crystal silicon, improve the conversion efficiency of the battery, so it is very suitable to be used as passivation film on the surface of crystalline silicon solar cells. In this paper, the preparation of alumina thin films on crystalline silicon solar cells by sol-gel technology was studied, and the passivation mechanism of several main passivation films was studied. Alumina thin films with different quality were obtained by controlling the technological parameters in the experiment, and the alumina films were studied and analyzed. This paper first introduces the development of solar cells and their surface passivation, expounds the principle of solar cells and surface passivation of solar cells, and the principle of measuring MIS structure by C-V method. High performance alumina passivated films were successfully prepared on the surface of crystalline silicon solar cells. The measured parameters are as follows: transmittance is up to 95.6, cutoff frequency is about 2 脳 105 Hzand interfacial density of states is 5.82 脳 1011cm-2eV-1. The passivation effect of alumina film is closely related to the process parameters. Under certain conditions, the thicker the alumina film, the higher the solution concentration, the higher the annealing temperature, the longer the annealing time, the better the film quality is, and the better the passivation effect on the surface of silicon solar cell is.
【學位授予單位】：長春理工大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TM914.4

【參考文獻】

相關(guān)期刊論文 前10條

1 沈輝;舒碧芬;;國內(nèi)外太陽電池的發(fā)展與應用[J];中國建設(shè)動態(tài).陽光能源;2005年05期

2 陳偉;賈銳;張希清;陳晨;武德起;李昊峰;吳大衛(wèi);陳寶欽;劉新宇;;晶體硅太陽電池表面鈍化技術(shù)[J];微納電子技術(shù);2011年02期

3 吳大衛(wèi);賈銳;武德起;丁武昌;陳偉;陳晨;岳會會;劉新宇;陳寶欽;;氧化鋁鈍化在晶體硅太陽電池中的應用[J];微納電子技術(shù);2011年08期

4 舒斌;張鶴鳴;王青;黃大鵬;宣榮喜;;溶膠-凝膠法制備Bi_2O_3-ZnO-Nb_2O_5薄膜及GaN MIS結(jié)構(gòu)C-V特性[J];半導體學報;2007年09期

5 黃慶舉;林繼平;魏長河;姚若河;;硅太陽能電池的應用研究與進展[J];材料開發(fā)與應用;2009年06期

6 王喜娜,敬承斌,劉愛云,趙修建;溶膠-凝膠法制備氧化鋁涂層的鍍膜新工藝研究[J];硅酸鹽通報;2004年02期

7 王俠;張雷;馬蕾;彭英才;;鈍化處理在消除多晶Si薄膜缺陷中的應用[J];微納電子技術(shù);2008年07期

8 何波;史衍麗;徐靜;;C-V法測量pn結(jié)雜質(zhì)濃度分布的基本原理及應用[J];紅外;2006年10期

9 晏良宏;蔣曉東;江波;;溶膠-凝膠法制備氧化鋁光學薄膜[J];化學研究與應用;2008年07期

10 倪萌,M K Leung,K Sumathy;太陽能電池研究的新進展[J];可再生能源;2004年02期

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本文編號：2139019