本文選題：軸向磁場 + 盤式開關(guān)磁阻電機��； 參考：《山東大學(xué)》2014年博士論文

【摘要】：軸向磁場盤式開關(guān)磁阻電機具有開關(guān)磁阻電機和軸向磁場盤式電機的綜合優(yōu)勢,因而具有功率密度高、轉(zhuǎn)矩大、結(jié)構(gòu)緊湊等優(yōu)點。本文從電機結(jié)構(gòu)、磁路計算、控制算法優(yōu)化及控制系統(tǒng)設(shè)計等多個方面對軸向磁場盤式開關(guān)磁阻電機進行了分析與研究。 磁路的解析分析是各類電機電磁設(shè)計、性能分析不可或缺的重要手段,對徑向磁場開關(guān)磁阻電機,磁路的解析分析以幾個關(guān)鍵轉(zhuǎn)子位置處磁化曲線的解析計算為基礎(chǔ),目前已得到了很好的研究和應(yīng)用。對軸向磁場盤式開關(guān)磁阻電機,這方面的研究還是空白,影響到該種電機的深入研究和應(yīng)用開發(fā)。本文針對軸向磁場盤式開關(guān)磁阻電機,解析計算了定子盤和轉(zhuǎn)子盤齒中心線對齊位置、齒槽中心線對齊位置和臨界對齊位置三個關(guān)鍵位置處的磁化曲線。首先根據(jù)電磁場的有限元計算結(jié)果,確定了各關(guān)鍵位置處的磁路結(jié)構(gòu)；然后給定繞組線圈電流,并將磁場磁力線等效為圓弧及直線,忽略鐵心磁阻,解析計算相應(yīng)產(chǎn)生的磁鏈,并由此得到磁鏈與電流之間的關(guān)系,即磁化曲線。 對基于解析計算所得到的軸向磁場盤式開關(guān)磁阻電機關(guān)鍵位置處的磁化曲線,首先對其�；幚�,然后借用常規(guī)徑向磁場開關(guān)磁阻電機的設(shè)計方法進行該種電機的電磁設(shè)計研究。最后,設(shè)計制造了一臺12/8極單定子盤、單轉(zhuǎn)子盤軸向磁場盤式開關(guān)磁阻電機,并對該電機進行了關(guān)鍵轉(zhuǎn)子位置處磁化曲線的三維有限元計算和實際測量,數(shù)值計算結(jié)果、實測結(jié)果與解析計算結(jié)果基本相符,證明了前述解析計算的正確性和有效性。 傳統(tǒng)的徑向磁場開關(guān)磁阻電機為雙凸極結(jié)構(gòu),而軸向磁場盤式開關(guān)磁阻電機為雙平面凸極結(jié)構(gòu),這種結(jié)構(gòu)的不同將導(dǎo)致兩類電機的數(shù)學(xué)模型存在差異。而開關(guān)磁阻電機本身具有非線性的電磁特性,難以建立精確的數(shù)學(xué)模型,這對該種電機采用傳統(tǒng)驅(qū)動控制方法帶來很大的困難。本文提出并研究了基于神經(jīng)網(wǎng)絡(luò)的軸向磁場盤式開關(guān)磁阻電機的最優(yōu)控制策略,首先,通過對電機樣機的離散實驗,研究了開關(guān)磁阻電機的開通角和關(guān)斷角對輸出轉(zhuǎn)矩的重要影響,并由此定義了開關(guān)磁阻電機最優(yōu)開關(guān)角的概念；其次,從控制的角度,確立了開關(guān)磁阻電機多輸入、多輸出的復(fù)雜非線性關(guān)系,從而引入了神經(jīng)網(wǎng)絡(luò)在開關(guān)磁阻電機驅(qū)動控制中的應(yīng)用研究；然后,采用三層BP神經(jīng)網(wǎng)絡(luò),設(shè)計了電流最優(yōu)的開關(guān)磁阻電機非線性多變量靜態(tài)神經(jīng)網(wǎng)絡(luò)控制器模型,其輸出為目標(biāo)電流、開通角及關(guān)斷角,輸入為目標(biāo)轉(zhuǎn)矩及電機當(dāng)前轉(zhuǎn)速,將這一神經(jīng)網(wǎng)絡(luò)控制器與傳統(tǒng)的PID控制器相結(jié)合,可構(gòu)成反饋控制系統(tǒng),從而使系統(tǒng)具有一定的動態(tài)特性。在神經(jīng)網(wǎng)絡(luò)驅(qū)動控制的實施過程中,為了獲得訓(xùn)練數(shù)據(jù),設(shè)計了神經(jīng)網(wǎng)絡(luò)在線訓(xùn)練方法,這一方法利用基于最小二乘法的變步長擬合尋優(yōu)方法,可以快速選擇在線訓(xùn)練的數(shù)據(jù)；最后,初步實現(xiàn)了開關(guān)磁阻電機的神經(jīng)網(wǎng)絡(luò)驅(qū)動控制系統(tǒng),并進行了樣機試驗,試驗結(jié)果證明了前述分析的正確性及神經(jīng)網(wǎng)絡(luò)在開關(guān)磁阻電機驅(qū)動控制中的有效性。 在軸向磁場盤式開關(guān)磁阻電機控制系統(tǒng)方面,本文從主電路結(jié)構(gòu)、MOSFET驅(qū)動優(yōu)化等方面進行了深入的分析研究。在主電路結(jié)構(gòu)方面,本文提出了一種基于同步整流技術(shù)的H橋結(jié)構(gòu)開關(guān)磁阻電機驅(qū)動控制方式,用多個功率MOSFET并聯(lián)的形式代替不對稱半橋結(jié)構(gòu)中的續(xù)流二極管,通過合理的控制,實現(xiàn)續(xù)流功能。理論分析與實驗證明,本文提出的基于同步整流技術(shù)的H橋結(jié)構(gòu)開關(guān)磁阻電機驅(qū)動控制方式,MOSFET的續(xù)流壓降明顯低于原有技術(shù)中二極管續(xù)流時的續(xù)流壓降,降低了續(xù)流功耗,提高了主電路的功率轉(zhuǎn)換效率。 在MOSFET驅(qū)動優(yōu)化方面,本文提出了一種基于動態(tài)電源的MOSFET優(yōu)化驅(qū)動方法,該驅(qū)動方法在專用驅(qū)動芯片直接驅(qū)動的基礎(chǔ)上添加了動態(tài)電源輔助系統(tǒng),實現(xiàn)了功率MOSFET的理想驅(qū)動,降低了電磁輻射,增加了系統(tǒng)運行的可靠性。這一驅(qū)動方法的工作過程分為動態(tài)電源與驅(qū)動芯片共同驅(qū)動和驅(qū)動芯片單獨驅(qū)動兩個階段。共同驅(qū)動階段為雙電源驅(qū)動模式,通過選擇合適的驅(qū)動參數(shù),使該驅(qū)動階段恰好工作于MOSFET的開通延遲階段,可有效增加驅(qū)動電流,減少開通延遲時間；在單獨驅(qū)動階段,驅(qū)動系統(tǒng)首先工作在MOSFET的電流上升階段,驅(qū)動芯片的輸出電流一部分給動態(tài)電源充電,另一部分用于驅(qū)動MOSFET,驅(qū)動電流有所降低,從而減緩了漏極電流的上升速度；然后,當(dāng)柵極電壓升高到密勒電壓后,MOSFET進入電壓下降階段,柵極電壓固定為密勒電壓值,此時驅(qū)動芯片的驅(qū)動電流停止給動態(tài)電源供電,全部輸入到MOSFET的柵極電容中,有效的縮短了密勒效應(yīng)的持續(xù)時間,加快了MOSFET漏源電壓的下降速度；最后,當(dāng)密勒效應(yīng)結(jié)束后,MOSFET的柵極電壓開始升高,此時驅(qū)動芯片的輸出電流又恢復(fù)到給動態(tài)電源和MOSFET柵極電容充電的狀態(tài),直到驅(qū)動過程結(jié)束。實驗表明,本文提出的基于動態(tài)電源的MOSFET優(yōu)化驅(qū)動方法,能夠有效地優(yōu)化MOSFET的開通過程。
[Abstract]:The axial magnetic disk type switched reluctance motor has the advantages of the switched reluctance motor and the axial magnetic disk motor, so it has the advantages of high power density, large torque and compact structure. In this paper, the axial magnetic disk type switched reluctance motor is carried out in many aspects, such as the structure of the motor, the calculation of the magnetic circuit, the optimization of the control algorithm and the design of the control system. Analysis and research.
The analytical analysis of magnetic circuit is an important means for all kinds of motor electromagnetic design and performance analysis. The analytical analysis of the radial magnetic field switched reluctance motor and the analytical analysis of the magnetic circuit are based on the analytical calculation of the magnetization curves at several key rotor positions. At present, the magnetic circuit has been well studied and applied. In this paper, the magnetization curves of the axis alignment position of the stator disc and the rotor disc tooth center line, the alignment position of the cogging center line and the critical position position at the three key position position are analyzed and calculated. First, the electromagnetic field is based on the electromagnetic field. The magnetic circuit structure at each key position is determined by the finite element calculation, then the coil current of the winding is given, and the magnetic field line is equivalent to the arc and the straight line, the magnetic resistance of the core is ignored and the corresponding magnetic chain is calculated, and the relationship between the magnetic chain and the current is obtained, that is, the magnetization curve.
On the basis of the magnetization curve at the critical position of the axial magnetic disk type switched reluctance motor based on the analytical calculation, the electromagnetic design of the motor is studied by using the conventional radial magnetic field switched reluctance motor (SRM). Finally, a 12/8 pole single stator disk is designed and manufactured, and the axial magnetic field of the single rotor disk is designed. The field disk type switched reluctance motor is used to calculate the magnetization curve at the key rotor position and to measure the magnetization curve at the key rotor position. The results of the numerical calculation agree basically with the analytical results, proving the correctness and validity of the analytical calculation mentioned above.
The traditional radial magnetic field switched reluctance motor is a double salient structure, and the axial magnetic disk switched reluctance motor is a double plane salient structure. The difference in this structure will lead to the difference in the mathematical model of the two types of motor. And the switched reluctance motor itself has the nonlinear electromagnetic characteristics, and it is difficult to establish a precise mathematical model. In this paper, the optimal control strategy of the axial magnetic disk switched reluctance motor based on neural network is proposed and studied. First, the important influence of the opening angle and the turn angle of the switched reluctance motor on the output torque is studied by the discrete experiment of the motor prototype, and the definition is also defined. The concept of optimal switching angle of switched reluctance motor is introduced. Secondly, from the angle of control, the complex nonlinear relation of multiple input and multi output of switched reluctance motor is established, and the application of neural network in the drive control of switched reluctance motor is introduced. Then, the optimal switched reluctance is designed by using three layers of BP neural network. The nonlinear multivariable static neural network controller model, whose output is the target current, the opening angle and the turn off angle, is input to the target torque and the current speed of the motor. This neural network controller is combined with the traditional PID controller to form a feedback control system, so that the system has a certain dynamic characteristics. In the neural network drive, the system has some dynamic characteristics. In the implementation of the dynamic control, a neural network on-line training method is designed to obtain the training data. This method uses the variable step length fitting method based on the least square method, and can quickly select the online training data. Finally, the neural network driven control system of the switched reluctance motor is preliminarily realized, and the prototype is carried out. The test results prove the validity of the above analysis and the effectiveness of neural network in the drive control of switched reluctance motor.
In the aspect of the axial magnetic disk switched reluctance motor control system, this paper makes an in-depth analysis of the main circuit structure, MOSFET drive optimization and so on. In the main circuit structure, this paper proposes a H bridge structure switched reluctance motor drive control method based on synchronous rectifier technology, which is used in the form of multiple power MOSFET parallel. Instead of the continuous flow diode in the asymmetrical half bridge structure, the continuous flow function is realized by reasonable control. The theoretical analysis and experiment prove that the H bridge structure switched reluctance motor drive control method based on the synchronous rectifier technology is proposed in this paper. The MOSFET continuous flow pressure drop is obviously lower than the continuous current pressure drop of the diode in the original technology. The power consumption of the continuous circuit improves the power conversion efficiency of the main circuit.
In the aspect of MOSFET drive optimization, this paper proposes a dynamic power based MOSFET optimization drive method. The driving method adds a dynamic power supply auxiliary system on the basis of the direct drive of the dedicated driver chip. It realizes the ideal drive of the power MOSFET, reduces the electromagnetic radiation and increases the reliability of the system operation. This driver is the driver. The working process of the method is divided into two stages: the dynamic power supply and the driver chip co drive and drive the chip to drive separately. The common drive stage is a dual power drive mode. By selecting the appropriate driving parameters, the driving stage is exactly working in the MOSFET opening delay stage, which can increase the driving current and reduce the opening delay time. In the separate driving stage, the drive system works first in the MOSFET current rising stage, the drive chip output current is partly charged to the dynamic power supply, the other is used to drive the MOSFET, and the drive current is reduced, thus slowing the rise of the leakage current; then, when the grid voltage is raised to the Miller voltage, the MOSFET enters the voltage. In the decline stage, the gate voltage is fixed to the Miller voltage value. At this time the driving current of the drive chip is stopped to the dynamic power supply, all input to the gate capacitance of the MOSFET, effectively shortens the duration of the Miller effect and accelerates the decline speed of the MOSFET leakage source voltage; at the end, when the Miller effect is over, the gate voltage of the MOSFET is open. At this time, the output current of the drive chip is restored to the state of charging the dynamic power supply and the MOSFET gate capacitance until the end of the driving process. The experiment shows that the proposed MOSFET optimization method based on the dynamic power supply can effectively optimize the operation of the MOSFET.
【學(xué)位授予單位】：山東大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2014
【分類號】：TM352

【參考文獻】

相關(guān)期刊論文 前10條

1 葉強;來新泉;李演明;袁冰;陳富吉;;一種DC-DC全區(qū)間分段線性斜坡補償電路設(shè)計(英文)[J];半導(dǎo)體學(xué)報;2008年02期

2 童懷;開關(guān)磁阻電機等效磁網(wǎng)絡(luò)模型的降階處理方案[J];電工技術(shù)學(xué)報;2000年01期

3 和軍平,姜建國,陳為;離線式PWM變換器電磁干擾傳播通道模型的研究[J];電工技術(shù)學(xué)報;2004年04期

4 屈克慶,陳國呈,許春雨,孫承波;一種輔助諧振變換極三相電壓型PWM變流器[J];電工技術(shù)學(xué)報;2005年02期

5 鄭洪濤,蔣靜坪;開關(guān)磁阻電機高性能轉(zhuǎn)矩控制策略研究[J];電工技術(shù)學(xué)報;2005年09期

6 陳恒林;凌光;黃華高;錢照明;;Boost變流器門極驅(qū)動電路的EMI發(fā)射及抑制[J];電工技術(shù)學(xué)報;2010年05期

7 劉教民;李建文;崔玉龍;韓明;;高頻諧振逆變器的功率MOS管驅(qū)動電路[J];電工技術(shù)學(xué)報;2011年05期

8 吳建華，詹瓊?cè)A，林金銘;開關(guān)磁阻電機的前期設(shè)計[J];電工技術(shù)學(xué)報;1995年01期

9 林鶴云，周鶚，，黃建中，蔣全;開關(guān)磁阻電機磁場有限元分析與鐵耗計算[J];電工技術(shù)學(xué)報;1996年01期

10 吳畏;許錦興;林金銘;;盤式永磁同步電動機及其發(fā)展[J];電工技術(shù)雜志;1990年02期

本文編號：1972691