本文選題：死區(qū)時間校正 + 三態(tài)DC-DC轉(zhuǎn)換器　； 參考：《天津大學(xué)》2014年碩士論文

【摘要】：隨著開關(guān)電源的日益發(fā)展,越來越多的開關(guān)電源不僅應(yīng)用于通訊、航天、工業(yè)等領(lǐng)域,在我們?nèi)粘Ｉ钪幸搽S處可見。便攜式電子設(shè)備的電源大多需要較好的性能和較小的尺寸,開關(guān)頻率較高,損耗升高因此轉(zhuǎn)換效率相應(yīng)降低。但在實際應(yīng)用中,轉(zhuǎn)換效率是開關(guān)電源一個非常重要的性能參數(shù),而影響轉(zhuǎn)換效率的一個主要因素就是死區(qū)時間,所以研究死區(qū)時間的控制方法是非常必要的。本文首先比較了幾種直流-直流轉(zhuǎn)換器的拓撲結(jié)構(gòu)和控制方式的優(yōu)缺點,分析了死區(qū)時間控制的基本原理,提出了使用三態(tài)直流-直流轉(zhuǎn)換器來檢測死區(qū)時間控制方法。結(jié)合具有功率傳輸門結(jié)構(gòu)的三態(tài)非反相直流-直流轉(zhuǎn)換器,確定了死區(qū)時間控制方法的模塊,包括體二極管導(dǎo)通檢測、體二極管導(dǎo)通脈寬測量和基于系統(tǒng)設(shè)計指標(biāo)的外圍電路設(shè)計,然后對死區(qū)時間控制方法進行了電路具體實現(xiàn),本文設(shè)計的死區(qū)時間控制方法可以分辨脈沖調(diào)制效應(yīng)信號的上升沿和下降沿,并且對相應(yīng)時間沿的死區(qū)時間分別修正,通過脈沖寬度調(diào)制方法實現(xiàn)了任意三態(tài)DC-DC Buck-boost轉(zhuǎn)換器的輸入輸出。在使用現(xiàn)有的MOSFET產(chǎn)品進行死區(qū)時間校正方法的實際驗證后,又基于0.18μm工藝進行了相應(yīng)DC-DC轉(zhuǎn)換器的流片。根據(jù)整體電路仿真,三態(tài)DC-DC Buck-boost轉(zhuǎn)換器可以實現(xiàn)輸入電壓范圍為2.7V到5.7V,輸出電壓為0.3V到6.8V,輸出電流可以高達6A,轉(zhuǎn)換效率可提高4%。芯片已經(jīng)成功流片,采用0.18μm Dongbu Hitec工藝進行版圖設(shè)計,面積為1650μm×2300μm。死區(qū)時間修正方法具有修正功能,直流-直流轉(zhuǎn)換器電路正常工作。
[Abstract]:With the development of switching power supply, more and more switching power supply is not only used in communication, aerospace, industry and other fields, but also widely used in our daily life. The power supply of portable electronic equipment mostly needs better performance and smaller size, the switching frequency is higher and the loss is higher, so the conversion efficiency is reduced accordingly. However, in practical application, conversion efficiency is a very important performance parameter of switching power supply, and the dead-time is one of the main factors that affect the conversion efficiency, so it is necessary to study the control method of dead-time. In this paper, the advantages and disadvantages of the topology and control methods of several DC-DC converters are compared, the basic principle of dead-time control is analyzed, and a three-state DC-DC converter is proposed to detect the dead-time control methods. Combined with the three-state non-inverse-phase DC-DC converter with power transmission gate structure, the dead-time control module is determined, including bulk diode conduction detection. The measurement of bulk diode conduction pulse width and the peripheral circuit design based on the system design index are carried out, and then the dead-time control method is realized in detail. The dead-time control method designed in this paper can distinguish the rising and descending edges of the pulse modulation effect signal, and modify the dead time of the corresponding time edge respectively. The input and output of any three-state DC-DC Buck-boost converter is realized by pulse width modulation. After using the existing MOSFET products to verify the dead-time correction method, the corresponding DC-DC converter wafer is carried out based on 0.18 渭 m process. According to the whole circuit simulation, the three-state DC-DC Buck-boost converter can realize the input voltage range from 2.7 V to 5.7 V, the output voltage from 0.3 V to 6.8 V, the output current up to 6A, and the conversion efficiency can be improved by 4%. The chip has been successfully flattened, and the layout is designed by using 0.18 渭 m Dongbu Hitec process, with an area of 1650 渭 m 脳 2300 渭 m. The dead-time correction method has the function of correction and the DC-DC converter circuit works normally.
【學(xué)位授予單位】：天津大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TM46

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本文編號：1954793