本文選題：電沉積 + 半導體��； 參考：《稀有金屬材料與工程》2014年02期

【摘要】：利用恒電位沉積方法,在陽極氧化鋁(AAO)模板里沉積了CdSe納米線。對其進行了結構和光學性質(zhì)的表征,并且用循環(huán)伏安法討論了其沉積機理。結果表明:室溫下,0.1 mol·L-1CdSO4+0.25 mol·L-1H2SO4+50 mmol·L-1 SeO2配比的溶液,0.4 V恒電位沉積,在AAO模板中制備出了CdSe納米線。EDS的結果表明Cd和Se的化學計量比接近于1:1;通過XRD確定了所沉積的CdSe為面心立方結構,其擇優(yōu)取向為(111)晶面。紫外可見分光光度計吸收光譜表明其吸收范圍在400~700 nm,吸收最大處在500 nm,PL發(fā)射譜表明CdSe納米線的發(fā)光峰在400 nm左右。
[Abstract]:CdSe nanowires were deposited in anodic alumina (AAO) template by potentiostatic deposition. The structure and optical properties were characterized and the deposition mechanism was discussed by cyclic voltammetry. The results showed that 0. 1 mol L-1CdSO4 0. 25 mol L-1H2SO4 50 mmol L-1 SeO2 solution was deposited at room temperature with 0. 4 V potentiostatic deposition. The results of CdSe nanowires. EDS prepared from AAO template show that the stoichiometric ratio of CD and se is close to 1: 1.The deposited CdSe has a face-centered cubic structure and its preferred orientation is C111) by XRD. The absorption range of CdSe nanowires is about 400nm, and the maximum absorption is 500nm PL emission spectrum, which indicates that the luminescence peak of CdSe nanowires is about 400nm.
【作者單位】： 深圳大學深圳市特種功能材料重點實驗室;
【基金】：國家自然科學基金(60906007)
【分類號】：TQ153.2

【共引文獻】

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本文編號：1942557