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半導(dǎo)體溫差發(fā)電過(guò)程的模型分析與數(shù)值仿真

發(fā)布時(shí)間:2018-03-24 23:25

  本文選題:溫差發(fā)電 切入點(diǎn):熱電模型 出處:《物理學(xué)報(bào)》2014年19期


【摘要】:本文提出一種新型的半導(dǎo)體溫差發(fā)電模型,在溫差發(fā)電過(guò)程的數(shù)值模擬中考慮了熱電單元之間封閉腔體內(nèi)空氣傳熱的影響.同時(shí)進(jìn)一步運(yùn)用有限元的數(shù)值計(jì)算方法對(duì)不同電臂對(duì)數(shù)和不同型號(hào)溫差發(fā)電模型的溫度場(chǎng)、電壓場(chǎng)進(jìn)行了數(shù)值仿真計(jì)算,并對(duì)仿真結(jié)果進(jìn)行分析.結(jié)果表明:采用127對(duì)熱電單元模型計(jì)算的能量轉(zhuǎn)換效率隨冷熱端溫差增大而迅速提高,與采用1對(duì)熱電單元模型計(jì)算的能量轉(zhuǎn)換效率之差從冷熱端溫差為20℃的0.39%提高到冷熱端溫差為220℃時(shí)的5.16%,能量轉(zhuǎn)換效率比1對(duì)熱電單元平均高出3.02%.冷端溫度恒定在30℃時(shí),溫差發(fā)電芯片的輸出電壓、功率以及能量轉(zhuǎn)換效率均隨著電偶臂的橫截面積的增大而提高,且電偶臂冷熱兩端的溫差越大提高幅度也越大,而溫差發(fā)電芯片內(nèi)阻則與電偶臂橫截面積成反比關(guān)系,當(dāng)溫差為220℃時(shí)對(duì)應(yīng)的輸出功率最高達(dá)28.9 W.
[Abstract]:In this paper, a new model of semiconductor thermoelectricity generation is proposed. In the numerical simulation of thermoelectric generation process, the influence of the air heat transfer in the closed cavity between thermoelectric units is considered, and the temperature field of different electric arm logarithm and different models of thermoelectric power generation model is further calculated by using finite element method. The voltage field is numerically simulated and the simulation results are analyzed. The results show that the energy conversion efficiency calculated by 127 for the thermoelectric unit model increases rapidly with the increase of the temperature difference between the cold and hot ends. The difference of energy conversion efficiency calculated with the model of 1 pair of thermoelectric units is increased from 0.39% of the temperature difference at the cold and hot ends to 5.16% of the temperature difference at the hot and cold ends at 220 鈩,

本文編號(hào):1660534

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