本文關(guān)鍵詞： 碳化硅 永磁同步電機(jī) MOSFET 橋臂串?dāng)_ 串?dāng)_抑制　出處：《南京航空航天大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：電動(dòng)汽車、航空、航天、電力牽引、家電等領(lǐng)域的飛速發(fā)展對(duì)永磁同步電機(jī)驅(qū)動(dòng)器提出了更高的要求,希望其具有更高的效率、更高的功率密度以及更高的可靠性。功率器件是電機(jī)驅(qū)動(dòng)系統(tǒng)的主要組成部分,對(duì)其效率、功率密度和可靠性起著主導(dǎo)作用。與傳統(tǒng)基于硅半導(dǎo)體材料的功率器件相比,新興碳化硅功率器件具有開關(guān)速度快、阻斷電壓高和耐高溫工作能力強(qiáng)等優(yōu)點(diǎn),由此可預(yù)見利用碳化硅功率器件設(shè)計(jì)的電機(jī)驅(qū)動(dòng)器能提高永磁同步電機(jī)驅(qū)動(dòng)系統(tǒng)的效率、功率密度以及動(dòng)態(tài)性能。隨著碳化硅功率器件制造技術(shù)的不斷發(fā)展和成熟,其在永磁同步電機(jī)驅(qū)動(dòng)器中的應(yīng)用研究受到研究人員越來越多的關(guān)注。永磁同步電機(jī)由于其具有結(jié)構(gòu)緊湊、效率高、調(diào)速性能好等優(yōu)點(diǎn)被廣泛應(yīng)用于電動(dòng)汽車、航空、航天、電力牽引、家電等領(lǐng)域。本文首先對(duì)永磁同步電機(jī)的結(jié)構(gòu)進(jìn)行簡單介紹,闡述了坐標(biāo)變換的原理,給出了永磁同步電機(jī)在坐標(biāo)變換后的數(shù)學(xué)模型,分析了電壓矢量控制的基本原理,介紹了PMSM中空間矢量作用的時(shí)間計(jì)算方法。與傳統(tǒng)的硅半導(dǎo)體相比,碳化硅半導(dǎo)體的材料特性存在較大優(yōu)勢(shì),因而碳化硅功率器件比傳統(tǒng)的硅功率器件具有更好地電氣特性,為了保證碳化硅功率器件的優(yōu)勢(shì)在永磁同步電機(jī)驅(qū)動(dòng)器中的充分發(fā)揮,使得基于碳化硅功率器件的永磁同步電機(jī)驅(qū)動(dòng)器能夠獲得更優(yōu)的性能,本文詳細(xì)分析了利用碳化硅功率器件可能帶來的實(shí)際應(yīng)用問題。電機(jī)驅(qū)動(dòng)器橋臂結(jié)構(gòu)電路中一個(gè)開關(guān)管快速開關(guān)瞬態(tài)產(chǎn)生的高電壓變化率(dv/dt)會(huì)影響其互補(bǔ)開關(guān)管的工作,引起串?dāng)_問題,導(dǎo)致額外的開關(guān)損耗甚至器件失效。本文重點(diǎn)討論Si C基高速開關(guān)給PMSM驅(qū)動(dòng)器帶來的一些關(guān)鍵問題,分析了電機(jī)驅(qū)動(dòng)器中橋臂串?dāng)_問題的產(chǎn)生機(jī)理及其危害,給出了電機(jī)驅(qū)動(dòng)器橋臂電路高頻串?dāng)_問題的特殊性,闡述了抑制串?dāng)_問題的方法并給出抑制實(shí)驗(yàn)效果。分析了高速開關(guān)下寄生電感對(duì)功率器件的安全工作的影響原理,給出開關(guān)速度提高對(duì)寄生參數(shù)容忍程度關(guān)系曲線,闡述了抑制寄生電感影響的方法并給出抑制的實(shí)驗(yàn)效果。最后,本文對(duì)PMSM驅(qū)動(dòng)器的功率器件進(jìn)行了損耗分析,指出了與硅功率器件相比,采用碳化硅功率器件所能取得的效率優(yōu)勢(shì),完成了輸出功率1k W的PMSM驅(qū)動(dòng)器實(shí)驗(yàn)樣機(jī)的設(shè)計(jì)制作,進(jìn)行了實(shí)驗(yàn)驗(yàn)證,并討論了保持相同效率時(shí),采用碳化硅功率器件對(duì)PMSM驅(qū)動(dòng)器的散熱系統(tǒng)體積/重量的減小。
[Abstract]:With the rapid development of electric vehicles, aviation, aerospace, electric traction, household appliances and other fields, PMSM drivers are required to have higher efficiency. Higher power density and higher reliability. Power device is the main component of motor drive system, for its efficiency. Compared with the traditional power devices based on silicon semiconductor materials, the new silicon carbide power devices have the advantages of fast switching speed, high blocking voltage and high temperature resistance. Therefore, it can be predicted that the motor driver designed by silicon carbide power device can improve the efficiency of the PMSM drive system. Power density and dynamic performance. With the continuous development and maturity of silicon carbide power device manufacturing technology. The application of PMSM in PMSM driver has attracted more and more attention. PMSM has been widely used in electric vehicles because of its compact structure, high efficiency and good speed regulation performance. In this paper, the structure of permanent magnet synchronous motor (PMSM) is introduced briefly, the principle of coordinate transformation is expounded, and the mathematical model of PMSM after coordinate transformation is given. The basic principle of voltage vector control is analyzed, and the time calculation method of space vector action in PMSM is introduced. Compared with the traditional silicon semiconductor, the material characteristics of silicon carbide semiconductor have great advantages. Therefore, silicon carbide power devices have better electrical characteristics than traditional silicon power devices, in order to ensure the advantages of silicon carbide power devices in permanent magnet synchronous motor driver. The PMSM driver based on sic power device can obtain better performance. In this paper, the practical application problems caused by the use of silicon carbide power devices are analyzed in detail. The high voltage change rate (dv / DT) generated by a fast switching switch in the bridge arm circuit of motor driver is discussed in detail. It will affect the work of its complementary switch. The crosstalk problem is caused, which leads to extra switching loss and even device failure. In this paper, some key problems brought by high speed switch based on sic to PMSM driver are discussed. The mechanism and harm of the crosstalk problem in the motor driver are analyzed, and the particularity of the high frequency crosstalk problem in the bridge arm circuit of the motor driver is given. The method of suppressing crosstalk problem is described and the experimental results are given. The principle of the influence of parasitic inductance on the safety of power device under high speed switch is analyzed. The curve of tolerance of switch speed to parasitic parameters is given, the method of restraining parasitic inductance is described and the experimental results are given. In this paper, the loss analysis of PMSM driver power device is carried out, and the efficiency advantage of silicon carbide power device compared with silicon power device is pointed out. The experimental prototype of 1kW PMSM driver with output power is designed and fabricated, and the experimental verification is carried out, and the same efficiency is discussed. Using silicon carbide power device to reduce the volume / weight of heat dissipation system of PMSM driver.
【學(xué)位授予單位】：南京航空航天大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TM341

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