【摘要】：采用SR型單晶硅片作為原材料,對(duì)鈍化發(fā)射極背面接觸(Passivated emitter and rear cell,PERC)工藝和普通單晶生產(chǎn)工藝中各步驟所得硅片的彎曲力學(xué)性能進(jìn)行對(duì)比。結(jié)果表明,PERC工藝各步驟均對(duì)硅片的彈性模量和抗彎強(qiáng)度產(chǎn)生了明顯影響,而普通工藝中只是印刷和燒結(jié)影響嚴(yán)重;通過對(duì)最終生產(chǎn)的電池片進(jìn)行比較,PERC工藝的彈性模量較高,即在外力作用下不容易變形;普通單晶工藝電池片的抗彎強(qiáng)度較高,從而使電池片能承受較大的載荷。通過改變PERC工藝的不同條件發(fā)現(xiàn),在PERC工藝中改變背場(chǎng)形式和改變激光開槽方向均可以提高電池片的抗彎強(qiáng)度,并且激光圖形間斷的電池片的抗彎強(qiáng)度高于激光圖形連續(xù)的電池片。
[Abstract]:Using SR single crystal wafer as raw material, the bending mechanical properties of passivated emitter backside contact (Passivated emitter and rear cell,PERC) process and common single crystal production process were compared. The results show that the elastic modulus and flexural strength of silicon wafer are obviously affected by each step of PERC process, but the effect of printing and sintering is serious in common process. The results show that the elastic modulus of the PERC process is high, that is, it is not easy to deform under the external force, and the bending strength of the ordinary single crystal process is higher, so that the battery chip can bear a large load. By changing the different conditions of PERC process, it is found that the bending strength of the battery can be improved by changing the backfield form and the laser slotted direction in the PERC process. Moreover, the bending strength of the battery with discontinuous laser pattern is higher than that with continuous laser pattern.
【作者單位】： 晶澳太陽能有限公司;
【分類號(hào)】：TM914.4

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