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低溫等離子體表面處理抑制絕緣材料表面電荷的研究

發(fā)布時(shí)間:2018-12-16 18:30
【摘要】:環(huán)氧樹(shù)脂材料憑借其優(yōu)異的機(jī)械性能和電學(xué)性能,被大范圍的應(yīng)用在高壓電氣設(shè)備中。但是環(huán)氧樹(shù)脂材料在直流高壓電場(chǎng)下,其金屬導(dǎo)體/絕緣材料/氣體的三接觸面處容易積聚表面電荷,削弱其絕緣性能,甚至引發(fā)沿面閃絡(luò)事故,嚴(yán)重影響了電氣設(shè)備的安全運(yùn)行。因此,本文研究利用低溫等離子體在環(huán)氧樹(shù)脂材料表面沉積類(lèi)Si O_2薄膜,在不影響絕緣材料本體性能的前提下改善其表面電學(xué)性能,達(dá)到抑制表面電荷積聚的目的。本文基于大氣壓等離子體增強(qiáng)型化學(xué)氣相沉積技術(shù),搭建了一套絕緣材料表面沉積處理實(shí)驗(yàn)系統(tǒng),采用介質(zhì)阻擋放電、大氣壓等離子體射流與滑動(dòng)放電作為等離子體源,選用正硅酸四乙酯作為反應(yīng)前驅(qū)物,使其在等離子體中發(fā)生反應(yīng),在環(huán)氧樹(shù)脂樣品表面沉積得到類(lèi)SiO_2薄膜。通過(guò)一系列的物理化學(xué)和電學(xué)特性測(cè)試,對(duì)比分析沉積處理前后環(huán)氧樹(shù)脂材料表面絕緣性能的變化;然后利用自主搭建的表面電位測(cè)試系統(tǒng),研究了沉積處理對(duì)環(huán)氧樹(shù)脂材料表面電荷積聚、分布及消散特性的影響;最后,結(jié)合多種測(cè)量手段得到的實(shí)驗(yàn)結(jié)果對(duì)沉積處理抑制表面電荷積聚的機(jī)理進(jìn)行了探討。沉積處理后,在環(huán)氧樹(shù)脂表面生成了一層厚達(dá)200 nm以上的致密均勻的類(lèi)SiO_2薄膜,其主要組成為Si-O-Si與Si-OH基團(tuán),呈現(xiàn)珊瑚狀顆粒排布并完全覆蓋了原有表面上的瑕疵,使表面潤(rùn)濕性提升、粗糙度下降;而且環(huán)氧樹(shù)脂表面與體積電導(dǎo)率均大幅度提升,沿面閃絡(luò)電壓的提升幅度也達(dá)到25%以上,其絕緣耐壓能力得到了改善。實(shí)驗(yàn)中分別采用正負(fù)極性直流電暈和脈沖電暈充電后,相對(duì)于未處理的環(huán)氧樹(shù)脂,經(jīng)過(guò)等離子體沉積處理后的環(huán)氧樹(shù)脂樣品表面電位初始積聚減少、電位衰減速率加快,電位分布更加均勻,表面電荷陷阱能級(jí)的深度更淺、密度更小,有利于提升環(huán)氧樹(shù)脂的絕緣耐壓水平;而且隨著沉積處理時(shí)間的延長(zhǎng),對(duì)表面積聚電荷的抑制效果也在不斷提升?傊,采用等離子體沉積處理可以抑制環(huán)氧樹(shù)脂表面電荷積聚,這對(duì)提升絕緣支撐中環(huán)氧樹(shù)脂的絕緣性能具有重要參考意義和實(shí)用價(jià)值。
[Abstract]:Epoxy resin is widely used in high voltage electrical equipment due to its excellent mechanical and electrical properties. However, when epoxy resin is in DC high voltage electric field, it is easy to accumulate surface charge at the three contact surfaces of metal conductor / insulating material / gas, which weakens its insulation performance, and even causes flashover accident along the surface. It seriously affects the safe operation of electrical equipment. Therefore, Si O _ 2 thin films deposited on the surface of epoxy resin by low-temperature plasma are studied in this paper. The surface electrical properties of the insulating materials are improved without affecting the bulk properties of the insulating materials, and the surface charge accumulation is restrained. Based on the atmospheric pressure plasma enhanced chemical vapor deposition technology, a set of experimental system for surface deposition of insulating materials has been set up. Dielectric barrier discharge, atmospheric pressure plasma jet and sliding discharge are used as plasma sources. Tetraethyl orthosilicate was used as the precursor of the reaction, which was reacted in plasma and deposited on the surface of epoxy resin to obtain SiO_2 like film. Through a series of physical, chemical and electrical tests, the changes of surface insulation properties of epoxy resin before and after deposition were compared and analyzed. Then, the effect of deposition on the surface charge accumulation, distribution and dissipation characteristics of epoxy resin was studied by using the self-built surface potential measurement system. Finally, the mechanism of inhibition of surface charge accumulation by deposition is discussed in combination with the experimental results obtained by various measurement methods. After deposition, a dense and uniform SiO_2 like film was formed on the surface of epoxy resin with a thickness of more than 200 nm. Its main composition was Si-O-Si and Si-OH groups. The coral-like particles are arranged and completely covered with defects on the original surface, which improves the wettability of the surface and decreases the roughness. Moreover, the surface and volume conductivity of epoxy resin were greatly improved, and the flashover voltage along the surface was increased by more than 25%, and the insulation voltage resistance was improved. After charged by positive and negative DC corona and pulse corona respectively, compared with the untreated epoxy resin, the initial potential accumulation of the epoxy resin sample after plasma deposition decreases and the potential decay rate is accelerated. The potential distribution is more uniform, the depth of surface charge trap energy level is lighter and the density is smaller, which is helpful to improve the insulation voltage level of epoxy resin. Moreover, with the increase of deposition time, the inhibition effect of surface charge accumulation is also increasing. In a word, plasma deposition can inhibit the surface charge accumulation of epoxy resin, which has important reference significance and practical value to improve the insulation performance of epoxy resin in insulation support.
【學(xué)位授予單位】:鄭州大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2017
【分類(lèi)號(hào)】:TM215.1

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