【摘要】：在能源危機與環(huán)境污染的雙重壓力下,新能源發(fā)電技術得以快速發(fā)展。隨著電力電子技術的不斷進步,以光伏發(fā)電為代表的新能源發(fā)電領域日益普及。電力電子技術的進步與功率器件的發(fā)展息息相關,碳化硅功率器件以其開關速度高、導通損耗小、阻斷電壓高等優(yōu)秀特點,更加適應電力電子技術的發(fā)展方向,日益為人們所關注。本文選用基于碳化硅器件的單相全橋拓撲,對SiC MOSFET器件的特性展開研究,分析和研究了逆變器系統(tǒng)高頻化面臨的問題,并對驅動和實驗平臺進行優(yōu)化,并針對直流母線功率耦合問題開展研究。SiC MOSFET與Si MOSFET器件特性有較大差異,本文分析了SiC MOSFET器件的動、靜態(tài)特性,并與近似功率等級的Si MOSFET器件進行對比分析。本文搭建了雙脈沖實驗平臺,并對SiC MOSFET的相關特性進行了實驗研究。碳化硅器件的高開關速度使得逆變器可以運行于較高的開關頻率。但開通和關斷瞬間較大的電壓、電流變化率使得寄生參數(shù)對器件的影響較大。同時,在高開關頻率運行時,橋臂電路的串擾現(xiàn)象較為嚴重。本文針對高開關頻率運行時的寄生參數(shù)影響和橋臂串擾現(xiàn)象展開研究,分析了寄生參數(shù)和串擾的影響機理以及SiC MOSFET器件的特殊性。針對高頻化存在的問題,優(yōu)化了驅動電路和逆變器電路,并通過實驗進行分析驗證。高開關頻率可以使逆變器系統(tǒng)以較高的功率密度運行。但在單相全橋拓撲結構中,直流母線存在2倍基頻電壓波動,需要較大的電解電容進行功率解耦,不利于系統(tǒng)功率密度和輸出波形質(zhì)量的提升。本文分析了直流母線電壓二次波動的原理,對比了不同的功率解耦方法,并對有源功率解耦原理進行分析和數(shù)學建模,改進了有源功率解耦拓撲的控制算法,有效抑制了直流母線的電壓波動,提升了逆變器輸出電流質(zhì)量。搭建了基于有源功率解耦功能的碳化硅并網(wǎng)逆變器,完成了SiC MOSFET驅動電路、控制器、采樣電路等的設計與優(yōu)化,逆變器開關頻率為50kHz,并對有源功率解耦電路進行實驗分析,驗證了該方法的可行性。
[Abstract]:Under the dual pressure of energy crisis and environmental pollution, new energy generation technology has developed rapidly. With the development of power electronics technology, the field of new energy generation, represented by photovoltaic power generation, is becoming more and more popular. The progress of power electronics technology is closely related to the development of power devices. Because of its high switching speed, low conduction loss and excellent characteristics of blocking voltage, it is more suitable for the development direction of power electronics technology. People are paying more and more attention to it. In this paper, the single-phase full-bridge topology based on silicon carbide devices is selected to study the characteristics of SiC MOSFET devices, and the problems in high-frequency inverter system are analyzed and studied, and the driving and experimental platform are optimized. The characteristics of sic MOSFET and Si MOSFET devices are different from those of DC bus power coupling. The dynamic and static characteristics of SiC MOSFET devices are analyzed and compared with those of Si MOSFET devices with approximate power level. In this paper, a dual pulse experimental platform is built, and the related characteristics of SiC MOSFET are studied experimentally. The high switching speed of silicon carbide allows the inverter to operate at higher switching frequencies. However, the parasitic parameters have a great influence on the device due to the large voltage and current change rate in turn-on and turn-off. At the same time, the crosstalk of the bridge arm circuit is serious when the switching frequency is high. In this paper, the influence of parasitic parameters and crosstalk on the bridge arm during the operation of high switching frequency is studied. The influence mechanism of parasitic parameters and crosstalk and the particularity of SiC MOSFET devices are analyzed. The drive circuit and inverter circuit are optimized and verified by experiments. High switching frequency enables the inverter system to operate at a high power density. However, in the single-phase full-bridge topology, the DC bus has a voltage fluctuation of 2 times, which requires a large electrolytic capacitance to decouple the power, which is not conducive to the improvement of the system power density and the quality of the output waveform. This paper analyzes the principle of secondary fluctuation of DC bus voltage, compares different power decoupling methods, analyzes and models the principle of active power decoupling, and improves the control algorithm of active power decoupling topology. The voltage fluctuation of DC bus is restrained effectively and the output current quality of inverter is improved. The silicon carbide grid-connected inverter based on the active power decoupling function is built. The design and optimization of SiC MOSFET drive circuit, controller and sampling circuit are completed. The switching frequency of the inverter is 50 kHz, and the active power decoupling circuit is analyzed experimentally. The feasibility of the method is verified.
【學位授予單位】：中國礦業(yè)大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TM464

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