鋯酸鉛薄膜電容器的儲(chǔ)能行為及其應(yīng)用研究
發(fā)布時(shí)間:2018-04-12 13:39
本文選題:反鐵電薄膜 + 離子摻雜; 參考:《南京郵電大學(xué)》2016年碩士論文
【摘要】:反鐵電材料由于其在現(xiàn)代高新技術(shù)中起著越來越重要的作用而成為國(guó)內(nèi)外研究的熱點(diǎn),而具有復(fù)合鈣鈦礦結(jié)構(gòu)的PbZrO_3基反鐵電材料是一類最有發(fā)展?jié)摿Φ姆磋F電材料。其中,摻雜離子的PbZrO_3基反鐵電薄膜電容的制備工藝及其儲(chǔ)能性能,具有重要的理論意義和應(yīng)用價(jià)值。本論文采用化學(xué)溶液沉積法(CSD)結(jié)合快速熱處理工藝(RTA)制備鋯酸鉛(PbZrO_3,PZO)基反鐵電薄膜,研究了這類薄膜材料的摻雜改性、相變、反鐵電、介電、儲(chǔ)能等性能。采用化學(xué)溶液沉積法結(jié)合快速熱處理工藝在Pt/Ti/SiO_2/Si襯底上制備了不同Pr~(3+)離子含量Pb_(1-1.5x)Pr_xZrO_3(PPrZ)薄膜,研究了Pr~(3+)離子含量對(duì)薄膜形貌結(jié)構(gòu)、能量存儲(chǔ)和介電性質(zhì)的影響。經(jīng)過600℃快速熱處理后的PPrZ薄膜呈偽立方相鈣鈦礦結(jié)構(gòu),PPrZ薄膜表面致密,無裂紋。不同濃度的Pr~(3+)離子的摻雜對(duì)PbZrO_3反鐵電薄膜的電學(xué)性能影響巨大,通過改變離子濃度可以得到不同儲(chǔ)電性能的鋯酸鉛薄膜樣品。研究表明,適量Pr~(3+)離子的摻雜可以有效增強(qiáng)PbZrO_3反鐵電薄膜的電學(xué)性能。論文最后主要分析了新型儲(chǔ)能電容器在高密度儲(chǔ)能電容器領(lǐng)域在軍事方面、混合動(dòng)力車輛、生物醫(yī)學(xué)、物聯(lián)網(wǎng)底層傳感網(wǎng)節(jié)點(diǎn)上潛在的應(yīng)用。重點(diǎn)介紹了PbZrO_3反鐵電薄膜電容器在為物聯(lián)網(wǎng)底層傳感網(wǎng)節(jié)點(diǎn)供電上的應(yīng)用。論文結(jié)尾對(duì)全文進(jìn)行總結(jié),并對(duì)進(jìn)一步實(shí)驗(yàn)提出改進(jìn)方案。本論文研究工作還有很大的改進(jìn)空間,可以通過改變實(shí)驗(yàn)條件,得到性能更優(yōu)的鋯酸鉛反鐵電薄膜電容器。
[Abstract]:Antiferroelectric materials have become a hot research topic at home and abroad due to their more and more important role in modern high and new technology. PbZrO_3 based antiferroelectric materials with composite perovskite structure are the most promising antiferroelectric materials.Among them, the preparation process and energy storage performance of the doped PbZrO_3 based antiferroelectric thin film capacitors have important theoretical significance and application value.In this paper, PbZrO3PZO) based antiferroelectric thin films were prepared by chemical solution deposition method (CSD) and rapid heat treatment (RTA). The doping modification, phase transition, antiferroelectricity, dielectric and energy storage properties of PbZrO3PZO) based films were studied.Different Pr~(3) ion contents were prepared on Pt/Ti/SiO_2/Si substrates by chemical solution deposition and rapid heat treatment. The effects of Pr~(3) ion content on the morphology, energy storage and dielectric properties of the films were investigated.After rapid heat treatment at 600 鈩,
本文編號(hào):1739982
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