本文關(guān)鍵詞： 光學(xué)器件 太陽(yáng)能電池 砷化鎵 背場(chǎng)　出處：《光學(xué)學(xué)報(bào)》2017年02期 　論文類型：期刊論文

【摘要】：介紹了GaAs基太陽(yáng)能電池的原理、等效電路及性能參數(shù),基于集成電路工藝與器件計(jì)算機(jī)輔助工藝設(shè)計(jì)(TCAD)仿真工具,設(shè)計(jì)了背場(chǎng)分別為InAlGaP和InAlP的兩種GaAs基太陽(yáng)能電池,并對(duì)其結(jié)構(gòu)和性能進(jìn)行仿真。同時(shí),通過(guò)分子束外延(MBE)設(shè)備制備了這兩種太陽(yáng)能電池,并測(cè)試了其伏安(IV)特性。在考慮并聯(lián)電阻和串聯(lián)電阻對(duì)太陽(yáng)能電池伏安特性的實(shí)際影響后,仿真結(jié)果與實(shí)驗(yàn)結(jié)果基本一致。重?fù)诫s(原子濃度為2×1018 cm-3)的InAlGaP作為GaAs太陽(yáng)能電池背場(chǎng)時(shí),伏安特性曲線是典型的太陽(yáng)能電池的伏安特性。重?fù)诫s(原子濃度為2×1018 cm-3)的InAlP作為GaAs太陽(yáng)能電池背場(chǎng)時(shí),伏安特性曲線呈現(xiàn)"S"形變化。分析結(jié)果表明,背場(chǎng)與基層形成漂移場(chǎng),加速了光生少子在電池中的輸運(yùn),提高了光生電流,同時(shí),背場(chǎng)將光生少子反射回有源區(qū),降低了背表面的復(fù)合概率。當(dāng)InAlP作為背場(chǎng)時(shí),由于異質(zhì)結(jié)的存在,影響了載流子的運(yùn)輸,在較小的偏壓下,載流子主要通過(guò)隧道效應(yīng)越過(guò)勢(shì)壘,在較大的偏壓下,載流子主要通過(guò)熱電子發(fā)射越過(guò)勢(shì)壘,因此伏安特性曲線呈現(xiàn)"S"形變化。
[Abstract]:The principle, equivalent circuit and performance parameters of GaAs based solar cells are introduced. Based on the simulation tools of integrated circuit and device computer aided process planning, two kinds of GaAs based solar cells with backfield of InAlGaP and InAlP are designed. At the same time, the two kinds of solar cells were fabricated by MBE equipment. After considering the effect of shunt resistance and series resistance on the volt-ampere characteristics of solar cells, The simulation results are in good agreement with the experimental results. When heavily doped (2 脳 10 ~ (18) cm ~ (-3)) InAlGaP is used as the backfield of GaAs solar cells, The volt-ampere characteristic curve is a typical volt-ampere characteristic of solar cells. When heavily doped (atomic concentration 2 脳 1018 cm-3) InAlP is used as the backfield of GaAs solar cells, the volt-ampere characteristic curve shows a "S" shape change. The analysis results show that the drift field is formed between the backfield and the base. The photoinduced minority carrier transport in the battery is accelerated, and the photogenerated current is increased. At the same time, the back field reflects the photogenerated minority carrier back to the active region, thus reducing the recombination probability of the back surface. When InAlP is used as the backfield, the heterojunction exists. The carrier transport is affected. At a small bias, the carrier crosses the barrier mainly through the tunneling effect. At the larger bias, the carrier mainly crosses the barrier by hot electron emission, so the volt-ampere characteristic curve shows a "S" shape change.
【作者單位】： 南通大學(xué)江蘇省專用集成電路設(shè)計(jì)重點(diǎn)實(shí)驗(yàn)室;中國(guó)科學(xué)院蘇州納米技術(shù)與納米仿生研究所;
【基金】：國(guó)家自然科學(xué)基金(61474067,61176128,61376091,61534008) 交通運(yùn)輸部科技計(jì)劃(2013319813100)
【分類號(hào)】：TM914.4

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