本文關(guān)鍵詞： 功率半導(dǎo)體器件 IGBT 功率集成電路 LDMOS 三相馬達(dá)驅(qū)動(dòng)芯片　出處：《浙江大學(xué)》2014年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著世界范圍內(nèi)能源危機(jī)的到來(lái),各國(guó)政府都在為經(jīng)濟(jì)可持續(xù)發(fā)展的目的積極推廣節(jié)能降耗技術(shù)。高效節(jié)能已經(jīng)成為未來(lái)電子產(chǎn)品發(fā)展的一個(gè)重要方向。目前,電源能耗標(biāo)準(zhǔn)已經(jīng)在全球逐步實(shí)施,世界各國(guó)已對(duì)家電與消費(fèi)電子產(chǎn)品的待機(jī)功耗與效率開始實(shí)施越來(lái)越嚴(yán)格的省電要求。功率半導(dǎo)體器件與功率集成電路在電力、能源、航天及消費(fèi)類電子領(lǐng)域扮演著不可或缺的角色,因此,功率半導(dǎo)體器件與功率集成電路的研究與開發(fā),具有舉足輕重的地位。 本論文的主要工作及創(chuàng)新點(diǎn)： 1、對(duì)功率分立器件IGBT進(jìn)行了深入研究。重點(diǎn)研究了IGBT的開關(guān)特性和安全工作區(qū)。通過(guò)TCAD工具仿真和流片測(cè)試,分析了IGBT開啟過(guò)程中遇到的共性問(wèn)題——在IGBT的開啟過(guò)程中,集電極電壓Vce在短時(shí)間內(nèi)出現(xiàn)不降反升的現(xiàn)象。通過(guò)調(diào)研文獻(xiàn)、仿真和測(cè)試的對(duì)比,作者提出了一種IGBT的開啟機(jī)制,完美地解釋了上述出現(xiàn)的異�，F(xiàn)象,并對(duì)相關(guān)參數(shù)進(jìn)行了仿真,從而提出了降低IGBT開關(guān)功耗的新思路。 2、設(shè)計(jì)了一款基于BCD工藝的500V三相馬達(dá)驅(qū)動(dòng)芯片。針對(duì)變頻節(jié)能空調(diào)的應(yīng)用,開發(fā)出具有自主知識(shí)產(chǎn)權(quán)的500V三相馬達(dá)驅(qū)動(dòng)智能功率芯片產(chǎn)品。該芯片采用PN結(jié)對(duì)通隔離,將電源電路、低壓控制邏輯電路、20KHz振蕩器、PWM控制電路、過(guò)熱、過(guò)流、欠壓保護(hù)電路,高低端驅(qū)動(dòng)電路、自舉二極管以及由六個(gè)LDMOS組成的三相半橋驅(qū)動(dòng)電路集成在同一芯片上。因此該芯片高度集成化、小型化以及智能化。相比于Toshiba公司用較為昂貴的SOI工藝設(shè)計(jì),本文采用相對(duì)便宜并且成熟的BCD外延工藝進(jìn)行設(shè)計(jì),雖然難度較大,但是成本能降低不少,因此可以取代進(jìn)口,實(shí)現(xiàn)國(guó)產(chǎn)化。另外,創(chuàng)造性地設(shè)計(jì)了NLDMOS上管結(jié)構(gòu),既減少了掩膜板的數(shù)量,又節(jié)省了芯片面積。
[Abstract]:With the arrival of the worldwide energy crisis, governments of all countries are actively promoting energy-saving technologies for the purpose of sustainable economic development. Efficient energy saving has become an important direction for the development of electronic products in the future. At present, Power consumption standards have been implemented step by step in the world. Countries in the world have begun to implement more and more stringent power saving requirements for the standby power consumption and efficiency of household appliances and consumer electronic products. Aerospace and consumer electronics play an indispensable role, so the research and development of power semiconductor devices and power integrated circuits play an important role. The main work and innovation of this thesis are as follows:. 1. The power discrete device IGBT is studied in depth. The switching characteristics and safe working area of IGBT are studied emphatically. The common problems encountered in the process of IGBT opening are analyzed through the simulation of TCAD tools and the test of streamer, which is the common problem in the process of IGBT opening. The collector voltage Vce appears the phenomenon of not falling but rising in a short period of time. Based on the investigation and comparison of literature, simulation and test, the author puts forward a mechanism of opening IGBT, which perfectly explains the abnormal phenomenon mentioned above. The related parameters are simulated, and a new idea to reduce the power consumption of IGBT switch is proposed. 2. A 500V three-phase motor drive chip based on BCD process is designed. In view of the application of frequency conversion and energy-saving air conditioning, a 500V three-phase motor driving intelligent power chip with independent intellectual property is developed. The power supply circuit, low voltage control logic circuit, 20kHz oscillator PWM control circuit, overheating, overcurrent, undervoltage protection circuit, high and low end drive circuit, The bootstrap diode and the three-phase half-bridge drive circuit composed of six LDMOS are integrated on the same chip. Therefore, the chip is highly integrated, miniaturized and intelligent. In this paper, the relatively cheap and mature BCD epitaxy process is adopted. Although it is difficult, but the cost can be reduced a lot, so it can replace the import and realize the localization. In addition, the NLDMOS tube structure is designed creatively. Not only reduce the number of mask board, but also save the chip area.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TN322.8;TN402

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 高琰,亢寶位,程序;一種具有新耐壓層結(jié)構(gòu)的IGBT[J];半導(dǎo)體技術(shù);2003年07期

2 袁壽財(cái)，王曉寶，劉欣榮;850V／18A、1200V／8A　IGBT研制[J];半導(dǎo)體技術(shù);1994年05期

3 卓偉，，劉光廷，張國(guó)忠;1000V／20A　IGBT的研制[J];半導(dǎo)體技術(shù);1995年03期

4 袁壽財(cái);新型功率器件IGBT研制[J];半導(dǎo)體技術(shù);1997年02期

5 袁壽財(cái);輻照對(duì)IGBT特性的影響[J];半導(dǎo)體技術(shù);1997年04期

6 張華曹;電流增益與IGBT的開通及關(guān)斷特性[J];半導(dǎo)體技術(shù);1998年02期

7 何進(jìn),王新,陳星弼;基于SDB技術(shù)的新結(jié)構(gòu)PT型IGBT器件研制[J];半導(dǎo)體學(xué)報(bào);2000年09期

8 楊洪強(qiáng),陳星弼;具有動(dòng)態(tài)控制陽(yáng)極短路結(jié)構(gòu)的高速IGBT(英文)[J];半導(dǎo)體學(xué)報(bào);2002年04期

9 程序,吳郁,劉興明,王哲,亢寶位,李俊峰,韓鄭生;一種高性能的新結(jié)構(gòu)IGBT(英文)[J];半導(dǎo)體學(xué)報(bào);2003年06期

10 喬明;肖志強(qiáng);方健;鄭欣;周賢達(dá);徐靜;何忠波;段明偉;張波;李肇基;;基于薄外延技術(shù)的高壓BCD兼容工藝(英文)[J];半導(dǎo)體學(xué)報(bào);2007年11期

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