本文關(guān)鍵詞： 沉積工藝 中頻反應(yīng)濺射:Zr-N薄膜 顏色 沉積速率 俄歇深度分析　出處：《河北農(nóng)業(yè)大學(xué)》2005年碩士論文　論文類型：學(xué)位論文

【摘要】：現(xiàn)代科學(xué)技術(shù)的發(fā)展對材料的性能的要求日益提高,利用濺射薄膜對材料表面防腐、表面裝飾和各種工模具的表面強(qiáng)化是提高材料性能的一種經(jīng)濟(jì)實(shí)用的途徑。近年來,仿金膜氮化鋯(ZrN)由于有比氮化鈦更好的耐磨性、抗腐蝕性,更優(yōu)的力學(xué)性質(zhì),良好的化學(xué)和熱學(xué)性能以及漂亮的金黃色和較高的硬度和熔點(diǎn),已經(jīng)在手表、眼睛架、金屬家具、五金制品、陶瓷及玻璃制品等得到廣泛的應(yīng)用。 目前關(guān)于氮化鋯薄膜的制備方法很多,直流反應(yīng)濺射技術(shù)由于存在著陽極消失和遲滯效應(yīng)的缺陷,嚴(yán)重的影響了薄膜的沉積速率。因此如何使得靶面處于金屬模式的濺射狀態(tài)下維持較高的濺射速率,在基體上能夠獲得化學(xué)配比合適的氮化鋯薄膜并有較高的沉積速率,是濺射氮化鋯薄膜需要解決的一個關(guān)鍵問題。中頻濺射技術(shù)是近些年來興起的一門新技術(shù),它是將輝光放電、等離子體與中頻技術(shù)相結(jié)合的一種物理氣相沉積技術(shù),兼具蒸鍍法沉積速率高和濺射法離子轟擊清潔基體表面的優(yōu)點(diǎn)。中頻濺射能夠顯著的改善薄膜的性能,提高膜層和基底的結(jié)合力,繞射性能好、薄膜缺陷少以及可鍍材料廣泛等優(yōu)點(diǎn)。另外中頻濺射技術(shù)能夠有效抑制弧光放電及根除陽極消失,從而保證濺射沉積過程能夠穩(wěn)定進(jìn)行。因此中頻濺射在裝飾薄膜的工業(yè)化生產(chǎn)中發(fā)揮著重要作用。 本研究利用工業(yè)化生產(chǎn)設(shè)備SP-1215,采用中頻電源、孿生磁控靶、等離子體和質(zhì)譜分析技術(shù),在1Crl8Ni9Ti不銹鋼基底上沉積氮化鋯薄膜,改變試驗(yàn)的工藝參數(shù),制備了不同工藝下的Zr-N薄膜。并對不同工藝下的薄膜試樣進(jìn)行了分析研究,得到了以下幾點(diǎn)結(jié)論: 1、工作氣壓在0.3Pa附近的范圍內(nèi),薄膜能夠得到較高的沉積速率。Zr-N薄膜的沉積速率與濺射功率和反應(yīng)氣體分壓強(qiáng)有密切的關(guān)系:沉積速率和濺射功率成正比,和反應(yīng)氣體分壓強(qiáng)成反比。而基體偏壓對沉積速率的影響很小。 2、反應(yīng)氣體分壓強(qiáng)和濺射功率是影響Zr-N薄膜顏色的最主要的兩個因素。氮?dú)夥謮簭?qiáng)由0～85%的變化范圍內(nèi),Zr-N薄膜的顏色呈白色、淺黃色、金黃色、紅金色和深紅色的變化規(guī)律;在濺射功率3KW～10KW的范圍內(nèi),Zr-N薄膜顏色呈金黃略微偏紅、金黃色、淺黃色的變化規(guī)律,兩者恰好相反。因此對薄膜顏色起決定作用的是濺射功率和反應(yīng)氣體分壓強(qiáng)的比值。 3、通過對不同反應(yīng)氣體分壓強(qiáng)下制備的Zr-N薄膜的俄歇深度分析,發(fā)現(xiàn)了N/Zr比例隨氮?dú)夥謮簭?qiáng)的增加而增加,但是增加趨勢趨緩。 通過大量的氮化鋯沉積試驗(yàn)數(shù)據(jù),分析了中頻反應(yīng)磁控濺射沉積工藝參數(shù)對氮化鋯的顏色和沉積速率的影響,從而在工業(yè)化生產(chǎn)設(shè)備上獲得一
[Abstract]:With the development of modern science and technology, the performance of materials is becoming more and more important. Sputtering films are used to prevent corrosion on the surface of materials. Surface decoration and surface strengthening of various die tools are an economical and practical way to improve the properties of materials. In recent years, the gold-imitating film zirconium nitride ZrN has better wear resistance and corrosion resistance than titanium nitride. Better mechanical properties, good chemical and thermal properties as well as beautiful gold and high hardness and melting point, have been in watches, eye frames, metal furniture, hardware. Ceramics and glass products are widely used. At present, there are many preparation methods of zirconium nitride thin films. DC reactive sputtering technology has the defects of anodic disappearance and hysteresis. The deposition rate of the film is seriously affected, so how to keep the target surface in the metal mode of sputtering state to maintain a high sputtering rate. Zirconium nitride thin films with suitable chemical ratio and high deposition rate can be obtained on substrates, which is a key problem to be solved in sputtering zirconium nitride thin films. Intermediate frequency sputtering technology is a new technology developed in recent years. It is a physical vapor deposition technology which combines glow discharge, plasma and intermediate frequency technology. With the advantages of high deposition rate of evaporation and ion bombardment of clean substrate surface by sputtering, if sputtering can significantly improve the performance of the film, improve the adhesion between the film and substrate, and have good diffraction performance. In addition, if sputtering technology can effectively suppress arc discharge and eliminate anode disappearance. Therefore, if sputtering plays an important role in the industrial production of decorative films. In this study, the industrial production equipment SP-1215, if power supply, twin magnetic target, plasma and mass spectrometry analysis technology. Zirconium nitride thin films were deposited on 1Crl8Ni9Ti stainless steel substrate and the technological parameters were changed. Zr-N thin films were prepared under different processes, and the film samples under different processes were analyzed and studied, and the following conclusions were obtained: 1, the working pressure is in the range of 0.3 Pa. The deposition rate of Zr-N thin films is closely related to the sputtering power and reactive gas partial pressure: the deposition rate is directly proportional to the sputtering power. It is inversely proportional to the partial pressure of the reaction gas, while the substrate bias has little effect on the deposition rate. 2. The reactive gas partial pressure and sputtering power are the two most important factors affecting the color of Zr-N films. The color of Zr-N thin films is white in the range of 0 ~ 85% nitrogen partial pressure. Light yellow, golden yellow, red gold and deep red change law; In the range of sputtering power of 3KW ~ (10) KW, the color of Zr-N thin film is golden slightly red, golden yellow and light yellow. Therefore, it is the ratio of sputtering power to partial pressure of reactive gas that determines the color of the film. 3. By analyzing the Auger depth of Zr-N films prepared at different partial pressure of reaction gas, it is found that the ratio of N / Zr increases with the increase of nitrogen partial pressure, but the increasing trend is slower. Based on a large amount of experimental data of zirconium nitride deposition, the influence of deposition parameters of intermediate frequency reactive magnetron sputtering on the color and deposition rate of zirconium nitride was analyzed.
【學(xué)位授予單位】：河北農(nóng)業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2005
【分類號】：TB43

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 李健,韋習(xí)成;物理氣相沉積技術(shù)的新進(jìn)展[J];材料保護(hù);2000年01期

2 朱永法,殷木省,王莉,姚文清,嵇世山,曹立禮;Ti/ZrN_2/Al薄膜界面擴(kuò)散反應(yīng)的研究[J];材料工程;2001年07期

3 侯俊英,魏蔚,王海梅;氮化鈦仿金鍍層的耐磨性研究[J];電鍍與精飾;2004年02期

4 趙錫欽;濺射薄膜技術(shù)的應(yīng)用[J];電子機(jī)械工程;1999年03期

5 許蘭萍,張德元,朱福如,彭文屹,鄧鳴,付青峰,羅文;1Cr18Ni9Ti多弧離子鍍耐蝕涂層研究[J];腐蝕與防護(hù);1999年02期

6 劉麗紅,胡社軍,曾鵬,謝光榮;高速鋼表面真空電弧沉積ZrN薄膜的組織與性能研究[J];工具技術(shù);2004年10期

7 李忠厚,劉小平,徐重;刀具 PVD 涂層技術(shù)的發(fā)展[J];工具技術(shù);1999年02期

8 張建民,王立,梁昌慧;磁控濺射靶源設(shè)計(jì)及濺射工藝研究[J];陜西師范大學(xué)學(xué)報(bào)(自然科學(xué)版);1999年01期

9 楊建宏，閆進(jìn);離子鍍裝飾膜厚度測量技術(shù)[J];太原重型機(jī)械學(xué)院學(xué)報(bào);1996年01期

10 王茂祥;影響低溫等離子體多弧鍍TiN裝飾膜膜層色澤的因素[J];真空與低溫;1996年02期

，

本文編號：1453665