本文選題：單芯片集成　切入點：智能功率驅(qū)動　出處：《東南大學(xué)》2016年博士論文　論文類型：學(xué)位論文

【摘要】：單片集成智能功率驅(qū)動芯片屬于高低壓兼容功率集成電路,其內(nèi)部集成有功率器件、高壓驅(qū)動電路,以及故障檢測、信號產(chǎn)生、智能控制等低壓邏輯電路。由于其功能與結(jié)構(gòu)的高度集成化,使得應(yīng)用系統(tǒng)分立元件個數(shù)減少、系統(tǒng)成本降低及應(yīng)用可靠性得到大幅提升。目前,單片集成智能功率驅(qū)動芯片在智能家電、新能源交通工具及智能機器人等高端領(lǐng)域得到廣泛使用,成為以上系統(tǒng)的核心元件之一。但是,系統(tǒng)應(yīng)用中所面臨的大功率、感性負載及高開關(guān)速度等條件也對單片集成智能功率驅(qū)動芯片的設(shè)計提出了新的挑戰(zhàn),如何提升芯片效率、提高抗噪能力、優(yōu)化故障檢測及保護精度等,是單片集成智能功率驅(qū)動芯片研發(fā)所應(yīng)關(guān)注的重點。本文針對以上關(guān)鍵問題,系統(tǒng)性地對單片智能功率驅(qū)動芯片的功率柵驅(qū)動技術(shù)、故障檢測及保護技術(shù)以及高精度信號產(chǎn)生技術(shù)進行了深入的研究,提出了相應(yīng)的優(yōu)化技術(shù)或改進方法,并基于華潤上華0.5μm 600V BCI (Bipolar-CMOS-IGBT) SOI (Silicon-On-Insulator)高低壓兼容工藝完成了芯片的流片驗證。論文的主要研究工作包括：1.深入分析了功率器件開關(guān)損耗與電流電壓過沖的形成機理,重點剖析了低損耗和低過沖這對矛盾的本質(zhì)原因,指出優(yōu)化開關(guān)損耗和開關(guān)過沖的關(guān)鍵在于對dICE/dt和dVCE/dt的獨立控制,進而提出了一種驅(qū)動能力自適應(yīng)調(diào)節(jié)的功率柵驅(qū)動電路,優(yōu)化了損耗和過沖之間的折中關(guān)系。測試結(jié)果表明,與傳統(tǒng)結(jié)構(gòu)相比,在關(guān)斷損耗相同的條件下,電壓過沖減小了52.4%。2.分析了單片集成智能功率驅(qū)動芯片的溫升機理,提出了一種新型高線性度高靈敏度的溫度檢測技術(shù)。利用雙極晶體管基極-發(fā)射極電壓的非線性項與集電極電流有關(guān)、線性項與集電極電流無關(guān)的特性,消去溫度非線性變化項,得到與溫度成線性關(guān)系的電壓。實驗結(jié)果表明,采用該新型結(jié)構(gòu)的溫度檢測電路,線性度可達99.95%,靈敏度為-10.17mV/℃。3.提出了一種高精度的新型電流模帶隙基準,采用雙反饋環(huán)路與四BJT交叉耦合的帶隙結(jié)構(gòu),有效抑制了運算放大器失調(diào)電壓及電流鏡失配對輸出電壓精度的影響,與傳統(tǒng)結(jié)構(gòu)相比,新結(jié)構(gòu)輸出電壓的相對誤差僅為原來的1/4。4.提出了一種新型張弛振蕩器結(jié)構(gòu),通過采用浮動充放電電容簡化了電路結(jié)構(gòu),減小了環(huán)路延時對振蕩器頻率的影響,新型張弛振蕩器每個周期內(nèi)環(huán)路總延時從4td降低至2td,提高了振蕩頻率與控制電流之間的線性度,測試結(jié)果表明,輸出信號頻率的非線性度小于0.86%。5.完成了單片集成智能功率驅(qū)動芯片中低壓差線性穩(wěn)壓器電路、霍爾輸入級電路、三相邏輯處理電路、故障自恢復(fù)電路等其它關(guān)鍵電路的分析與設(shè)計。基于上述關(guān)鍵技術(shù)及核心電路的研究成果,研制了一款單片集成智能功率驅(qū)動芯片,進行了全芯片的版圖設(shè)計及流片驗證,完成了包括傳輸特性、開關(guān)特性及保護功能在內(nèi)的測試和考核。
[Abstract]:The monolithic integrated intelligent power drive chip belongs to the high and low voltage compatible power integrated circuit. Its internal integration includes power device, high voltage drive circuit, fault detection, signal generation, Low voltage logic circuits such as intelligent control. Due to the high integration of function and structure, the number of discrete components in application system is reduced, the system cost is reduced and the reliability of application is greatly improved. The single-chip integrated intelligent power drive chip has been widely used in the high-end fields such as smart household appliances, new energy vehicles and intelligent robots, and has become one of the core components of the system. The inductive load and high switching speed also pose a new challenge to the design of the single-chip integrated intelligent power drive chip. How to improve the efficiency of the chip, improve the anti-noise ability, optimize the fault detection and protection accuracy, etc. It is the focus of the research and development of single chip integrated intelligent power drive chip. In this paper, the power gate drive technology of the single chip intelligent power drive chip is systematically studied in view of the above key problems. The fault detection and protection technology and high-precision signal generation technology are deeply studied, and the corresponding optimization techniques or improved methods are put forward. The chip verification is completed based on the high and low voltage compatible technology of China Resources China Resources China #number0# 渭 m 600V BCI / Bipolar-CMOS-IGBT) SOI / Silicon-On-Insulator. The main research work in this paper includes: 1. The mechanism of power device switching loss and current and voltage overshoot is deeply analyzed. This paper analyzes the essential reason of the contradiction between low loss and low overshoot, points out that the key of optimizing switching loss and switching overshoot lies in the independent control of dICE/dt and dVCE/dt, and then puts forward a kind of power gate drive circuit with adaptive driving ability. The tradeoff relationship between loss and overshoot is optimized. The test results show that the voltage overshoot decreases by 52.40.2. the temperature rise mechanism of the single-chip integrated intelligent power drive chip is analyzed under the same turn-off loss. A new temperature detection technique with high linearity and high sensitivity is proposed. The nonlinear term of base emitter voltage of bipolar transistor is related to collector current, and the linear term is independent of collector current. The nonlinear variation of temperature is eliminated and the voltage linearly related to temperature is obtained. The experimental results show that the new structure of temperature detection circuit is used. The linearity is up to 99.95 and the sensitivity is -10.17mV / 鈩，

本文編號：1583910