本文關(guān)鍵詞： LED微陣列 柔性器件 MEMS 力學(xué)特性 熱耗散　出處：《中國(guó)科學(xué)院長(zhǎng)春光學(xué)精密機(jī)械與物理研究所》2017年博士論文　論文類(lèi)型：學(xué)位論文

【摘要】：隨著工藝技術(shù)水平的發(fā)展和應(yīng)用需求的不斷提高,對(duì)于無(wú)機(jī)半導(dǎo)體LED的研究趨于微型化、陣列化、集成化及柔性化。柔性光電子器件的研究擴(kuò)展了傳統(tǒng)無(wú)機(jī)半導(dǎo)體光電器件的應(yīng)用領(lǐng)域,具有柔性化及集成化優(yōu)勢(shì)的柔性LED微陣列引起了國(guó)內(nèi)外研究團(tuán)隊(duì)廣泛關(guān)注。柔性LED微陣列通過(guò)對(duì)器件結(jié)構(gòu)的特殊設(shè)計(jì)和制備工藝的選擇,克服了機(jī)械性能的限制,器件具備柔韌性及適應(yīng)性,具有可撓性好、可貼附在任意曲面或不規(guī)則物體表面的特點(diǎn)。本論文以通用型紅光AlGaInP-LED外延片作為核心發(fā)光材料,在LED發(fā)光機(jī)理研究的基礎(chǔ)上開(kāi)展了柔性LED微陣列器件的研究,成功設(shè)計(jì)和制作了柔性LED微陣列器件樣品,并進(jìn)一步研究了柔性LED微陣列器件的散熱問(wèn)題。具體研究?jī)?nèi)容包括:1.重點(diǎn)總結(jié)了LED發(fā)光的基本機(jī)理、LED的效率評(píng)價(jià)、效率衰退及其影響因素、LED的電流-電壓特性的內(nèi)部機(jī)制及其等效電路;討論了柔性襯底對(duì)LED發(fā)光的影響因素。2.比較了聚酰亞胺、聚二甲基硅氧烷、PET等柔性材料的特點(diǎn),選擇了聚二甲基硅氧烷作為柔性LED微陣列的連接材料,聚酰亞胺作為柔性基底材料。設(shè)計(jì)了多層堆疊式垂直柔性LED微陣列器件的基本結(jié)構(gòu),計(jì)算了柔性基底和包覆層的厚度,并分析了器件在彎曲狀態(tài)下的力學(xué)特性;3.優(yōu)化設(shè)計(jì)了連接電極結(jié)構(gòu),并分析了電極結(jié)構(gòu)的可靠性和疲勞性,提出了多通路電極結(jié)構(gòu)。多通路抑制了應(yīng)變?cè)诰植繀^(qū)域的集中,使應(yīng)力分布分散化,其伸展性和彎曲性相比于等寬度的直線型電極及單通路電極都有了顯著提升;4.設(shè)計(jì)了基于MEMS技術(shù)的柔性AlGaInP-LED微陣列的制作工藝流程,重點(diǎn)研究了濕法化學(xué)腐蝕、ICP刻蝕、金屬沉積、化學(xué)機(jī)械減薄等工藝方法,完成了高深寬比隔離溝槽的制作、Ga As襯底的減薄、像素間連接電極的和接觸點(diǎn)陣列的制作,制備了聚酰亞胺基底的8×8柔性AlGaInP-LED微陣列器件樣品;5.分析了LED在光電轉(zhuǎn)換過(guò)程的能量損失,并結(jié)合柔性LED微陣列器件光電性能的測(cè)試結(jié)果,分析了影響柔性LED微陣列器件熱耗散的因素。聚合物基底的熱導(dǎo)率決定了器件的整體是散熱能力;厚度為500μm-1000μm的柔性基底有利于熱量有效傳導(dǎo);增大LED像素的間距可以防止熱量在局部區(qū)域的快速積聚;在柔性基底上制作微結(jié)構(gòu)是增強(qiáng)柔性LED微陣列器件熱耗散的有效手段。
[Abstract]:With the development of process technology and the improvement of application demand, the research of inorganic semiconductor LED tends to be miniaturized and arrayed. The research of flexible optoelectronic devices extends the application field of traditional inorganic semiconductor optoelectronic devices. Flexible LED microarrays with flexible and integrated advantages have attracted wide attention of domestic and foreign research teams. Flexible LED microarrays are selected through the special design of device structure and fabrication process. Overcome the limitations of mechanical properties, the device has flexibility and adaptability, flexible and good. In this thesis, the general red AlGaInP-LED epitaxial wafer is used as the core luminescent material. Based on the study of LED luminescence mechanism, the flexible LED microarray devices were studied, and the samples of flexible LED microarray devices were designed and fabricated successfully. Furthermore, the heat dissipation of flexible LED microarray devices is studied. The specific research contents include: 1.The basic mechanism of LED luminescence is summarized, including efficiency evaluation, efficiency decline and its influencing factors. The internal mechanism and equivalent circuit of current-voltage characteristic of LED; The influence factors of flexible substrates on LED luminescence are discussed. 2. The characteristics of polyimide, polydimethylsiloxane LED and other flexible materials are compared. Polydimethylsiloxane was selected as the joining material of flexible LED microarray and polyimide as flexible substrate. The basic structure of multilayer stacked vertical flexible LED microarray device was designed. The thickness of flexible substrate and coating layer is calculated, and the mechanical properties of the device under bending state are analyzed. 3. The connection electrode structure is optimized, and the reliability and fatigue of the electrode structure are analyzed. The multi-channel electrode structure is proposed, which can restrain the concentration of strain in the local region and make the stress distribution disperse. The extensibility and curvature of the electrode are significantly improved compared with the linear electrode and single-channel electrode of equal width. 4. The fabrication process of flexible AlGaInP-LED microarray based on MEMS technology is designed, with emphasis on wet chemical etching and metal deposition. By chemical and mechanical thinning, the fabrication of high aspect ratio isolation grooves has been completed. The fabrication of GaAs substrates, interpixel connected electrodes and contact point arrays has been carried out. The samples of 8 脳 8 flexible AlGaInP-LED microarray devices on polyimide substrate were prepared. 5. The energy loss of LED in the photoelectric conversion process is analyzed, and the test results of the photoelectric performance of flexible LED microarray devices are given. The factors influencing the thermal dissipation of flexible LED microarray devices are analyzed. The thermal conductivity of polymer substrate determines the overall heat dissipation capability of the devices. A flexible substrate with a thickness of 500 渭 m to 1000 渭 m is conducive to effective heat conduction. Increasing the spacing of LED pixels can prevent the rapid accumulation of heat in the local area. Fabrication of microstructures on flexible substrates is an effective means to enhance thermal dissipation of flexible LED microarray devices.
【學(xué)位授予單位】：中國(guó)科學(xué)院長(zhǎng)春光學(xué)精密機(jī)械與物理研究所
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN312.8

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本文編號(hào)：1470394