二維層狀晶體場(chǎng)效應(yīng)器件電學(xué)性質(zhì)的溫度效應(yīng)研究
發(fā)布時(shí)間：2018-01-15 17:19
本文關(guān)鍵詞：二維層狀晶體場(chǎng)效應(yīng)器件電學(xué)性質(zhì)的溫度效應(yīng)研究 出處：《電子科技大學(xué)》2016年博士論文 論文類型：學(xué)位論文
更多相關(guān)文章： 石墨烯 金屬硫?qū)倩衔?/b> 介電層薄膜 場(chǎng)效應(yīng)器件 溫度效應(yīng)
【摘要】：近年來,受制于傳統(tǒng)硅材料的物理極限,硅基微電子器件要繼續(xù)遵循摩爾定律進(jìn)行發(fā)展面臨著極大的困難。二維層狀材料,包括石墨烯和金屬硫?qū)倩衔?因其具有優(yōu)異的電子遷移率、獨(dú)特的光電性能、原子級(jí)厚度等特點(diǎn),被視作可替代傳統(tǒng)硅材料的下一代微電子器件材料。而對(duì)硅基微電子器件的研究表明,器件在工作中由于熱量積累造成的器件溫度升高會(huì)導(dǎo)致器件一系列的性能變化。硅基微電子器件中的熱效應(yīng)已經(jīng)對(duì)器件進(jìn)一步發(fā)展產(chǎn)生了限制。因而在目前二維層狀材料還處于應(yīng)用研究初期的階段,及早地對(duì)利用二維層狀材料所形成的微電子器件性能與器件溫度變化的關(guān)系進(jìn)行研究,無疑有助于未來這一類新興電子器件的實(shí)際應(yīng)用和推廣。而在種類繁多的微電子器件中,場(chǎng)效應(yīng)器件是一種基礎(chǔ)性器件。因此,針對(duì)二維層狀材料,選取場(chǎng)效應(yīng)器件作為研究對(duì)象來對(duì)微電子器件的溫度效應(yīng)進(jìn)行研究,是非常必要的。針對(duì)這一問題,本論文分別對(duì)兩種典型的二維層狀材料場(chǎng)效應(yīng)器件,石墨烯場(chǎng)效應(yīng)器件和金屬硫?qū)倩衔颯nS_(2-x)Se_x場(chǎng)效應(yīng)器件的溫度效應(yīng),有重點(diǎn)地展開了一些研究工作。通過對(duì)石墨烯場(chǎng)效應(yīng)器件溫度效應(yīng)的研究,發(fā)現(xiàn)了石墨烯場(chǎng)效應(yīng)器件在長(zhǎng)時(shí)間工作時(shí)自發(fā)熱引起的溝道電阻不穩(wěn)定性,分析了這種不穩(wěn)定性的成因。在成功實(shí)現(xiàn)了高導(dǎo)熱AlN介電層薄膜制備的基礎(chǔ)上,通過用其作為器件的介電層,有效的抑制了溝道中熱量的積累,減弱了溝道電阻不穩(wěn)定性。利用化學(xué)氣相輸運(yùn)法合成了不同化學(xué)組分比的SnS_(2-x)Se_x層狀晶體,對(duì)相應(yīng)的場(chǎng)效應(yīng)器件在不同溫度下的轉(zhuǎn)移特性和輸出特性進(jìn)行了系統(tǒng)的表征和分析。通過對(duì)輸運(yùn)特性的分析和相關(guān)理論計(jì)算,解釋了S/Se比例對(duì)晶體在不同溫度下輸運(yùn)特性和晶體激活能影響。在石墨烯場(chǎng)效應(yīng)器件的溫度效應(yīng)問題上,首先對(duì)Si(001)上高導(dǎo)熱AlN薄膜的射頻反應(yīng)濺射制備工藝進(jìn)行了研究。通過對(duì)濺射功率的優(yōu)化控制,觀察到通過適當(dāng)調(diào)高濺射功率,可以有利于高能Al-N鍵的形成,從而得到c軸擇優(yōu)取向的AlN薄膜。結(jié)合考慮氧雜質(zhì)和晶界的散射模型及薄膜熱導(dǎo)率測(cè)試數(shù)據(jù),分析了反應(yīng)濺射氣氛中Ar/N2流量比對(duì)薄膜熱導(dǎo)率的影響,得到了優(yōu)化的反應(yīng)濺射氣氛。通過對(duì)不同襯底溫度下生長(zhǎng)的Al N薄膜熱導(dǎo)率以及AlN與Si襯底界面微結(jié)構(gòu)的表征,結(jié)合串聯(lián)熱阻模型和散射模型解釋了襯底加熱溫度-界面微結(jié)構(gòu)-熱導(dǎo)率三者之間的相互關(guān)系。通過提高襯底加熱溫度,抑制AlN/Si界面處非晶AlN層的形成,成功制備了熱導(dǎo)率可達(dá)26.7 W/mK的高導(dǎo)熱介電層薄膜。在實(shí)現(xiàn)了高導(dǎo)熱AlN介電層薄膜制備的基礎(chǔ)上,對(duì)石墨烯場(chǎng)效應(yīng)器件在80 K至300 K溫度區(qū)間內(nèi)存在大氣環(huán)境雜質(zhì)時(shí)的自發(fā)熱效應(yīng)表現(xiàn)進(jìn)行了測(cè)試和分析。發(fā)現(xiàn)當(dāng)石墨烯場(chǎng)效應(yīng)器件在0.5 W功率下工作500 s過程中,器件的溝道電阻在器件處于p型導(dǎo)電態(tài)和n型導(dǎo)電態(tài)時(shí)會(huì)分別呈現(xiàn)工作時(shí)逐漸上升和下降的變化。通過對(duì)器件工作前后電中性點(diǎn)電壓的測(cè)量以及輸運(yùn)機(jī)理的討論,得出這一溝道電阻不穩(wěn)定性的來源是石墨烯場(chǎng)效應(yīng)器件由于自發(fā)熱效應(yīng)造成溝道中p型雜質(zhì)解吸附,進(jìn)而使石墨烯上載流子的濃度產(chǎn)生了變化。通過比較SiO2薄膜和AlN薄膜分別作為介電層的石墨烯場(chǎng)效應(yīng)器件在80 K至300 K溫度區(qū)間下不同的溝道電阻變化規(guī)律及兩種薄膜的熱物性,表明通過將介電層替換為高導(dǎo)熱AlN介電薄膜可以有效地抑制溝道電阻在長(zhǎng)時(shí)間工作時(shí)的不穩(wěn)定變化。在對(duì)金屬硫?qū)倩衔颯nS_(2-x)Se_x場(chǎng)效應(yīng)器件的研究中,利用化學(xué)氣相輸運(yùn)法制備了不同Se含量的SnS_(2-x)Se_x層狀晶體,并對(duì)相應(yīng)的場(chǎng)效應(yīng)器件在90 K至295 K溫度區(qū)間下的轉(zhuǎn)移特性和輸出特性進(jìn)行了表征。發(fā)現(xiàn)在90 K至295 K的整個(gè)溫度區(qū)間,隨著Se含量的升高,在x≥1.2時(shí),器件在柵壓為-50 V至50 V范圍內(nèi)基本無法實(shí)現(xiàn)“關(guān)斷”。溝道中晶體與器件金屬電極之間的接觸類型也會(huì)隨著Se含量的升高發(fā)生由近似歐姆接觸向肖特基接觸的轉(zhuǎn)變。從能帶結(jié)構(gòu)變化的角度出發(fā),對(duì)Se含量變化與器件在不同溫度下性能變化的關(guān)系進(jìn)行了解釋,表明Se含量的增加實(shí)際上屬于一種n型摻雜。基于所測(cè)得的器件溝道電阻與溫度的關(guān)系,從實(shí)驗(yàn)和理論計(jì)算兩方面分析了Se含量對(duì)晶體激活能大小的影響,表明利用類氫模型能夠較為準(zhǔn)確的描述Se含量變化對(duì)能帶結(jié)構(gòu)的影響。而這種能帶結(jié)構(gòu)的變化本質(zhì)上是Se含量不同所造成的晶體介電常數(shù)改變主導(dǎo)的晶體激活能變化。
[Abstract]:In recent years, subject to the physical limit of traditional silicon material, silicon microelectronic devices will continue to follow Moore's law of development is facing great difficulties. Two dimensional layered materials, including graphene and metal chalcogenides, due to its excellent optical electron mobility, unique electrical properties, atomic thickness etc., are as an alternative to traditional silicon materials for the next generation of microelectronic devices and materials. Study of silicon-based microelectronic devices show that the device at work due to heat accumulation caused by the device temperature will lead to changes in performance of a series of devices. The thermal effect of Si based microelectronic devices have on the further development of the device in limit. The two-dimensional layered materials is still in the early stage of applied research, relationship between microelectronic device properties and device temperature changes early on the use of two-dimensional layered materials formed by the The research, undoubtedly contribute to the application and promotion of the future of this kind of emerging electronic devices. In a wide variety of microelectronic devices, field effect devices is a basic device. Therefore, the two-dimensional layered materials, selection of field effect devices as the temperature effect on the microelectronics research subject, is very necessary. To solve this problem, in the paper, two typical two-dimensional layered material field effect devices, graphene field-effect devices and metal chalcogenide SnS_ (2-x) temperature effect of Se_x field effect devices, mainly carried out some research work. Through the research on graphene field effect devices temperature effect the discovery channel resistance of graphene field-effect devices for a long time. Since the heat induced instability, analyzes the causes of this instability. After the successful implementation of the high thermal conductivity of AlN thin dielectric layer On the basis of membrane preparation, by using it as the dielectric layer of the device, can effectively restrain the heat accumulation in the channel, weakened the channel resistance instability. Using chemical vapor transport method for the synthesis of different chemical composition than the SnS_ (2-x) Se_x layered crystal, the transfer characteristics and output the characteristics of the corresponding field effect devices at different temperatures were characterized and analyzed by the system. The transport characteristics analysis and theoretical calculation, explain the effect of S/Se ratio on crystal at different temperature transport properties and crystal activation energy. The temperature effect in graphene field effect devices, first of all Si (001) process of RF Reactive Sputtering on the high thermal conductivity of AlN thin films were studied. The control through optimization of the sputtering power, observed by appropriate high sputtering power, can be conducive to the formation of Al-N bond energy, so as to get the c axis preferred orientation The AlN thin film. Considering the scattering model and the thin film thermal conductivity and oxygen impurity grain rate test data, analyzes the influence of Ar/N2 flow ratio on the thermal conductivity of thin films by reactive sputtering atmosphere, were obtained. The optimized sputtering atmosphere at different substrate temperatures and growth of Al N thin film thermal conductivity and AlN interface with the Si substrate structural characterization, combined with series resistance model and scattering model to explain the relationship between substrate temperature interface micro structure thermal conductivity three. By increasing the substrate temperature, inhibit the formation of AlN/Si at the interface of the amorphous AlN layer, the thermal conductivity is 26.7 W/mK high thermal conductivity and dielectric layer film successful preparation. In the realization of the high thermal conductivity of AlN dielectric thin films prepared on the basis of the self heating effect of graphene field-effect devices exist in atmospheric environment of impurities in the 80 K to 300 K temperature range were measured and divided Analysis. When the graphene field effect devices operating in the 0.5 W power 500 s, the channel resistance device changes were present when working gradually increased and decreased in the device in P type conductive state and N conductive state. The device before and after the measurement of electrical neutral point voltage and transport the mechanism of discussion, that source of this instability is the channel resistance of graphene field-effect devices due to self heating effect caused by the P channel in the solution and the concentration of impurity adsorption of graphene on the carriers have changed. Through the comparison of the SiO2 and AlN films were used as the thermal properties of graphene dielectric layer the field effect device different from 80 K to 300 K temperature range under the channel resistance variation and two kinds of films, that through the dielectric layer with high thermal conductivity AlN dielectric films can effectively suppress the channel resistance in a long time. The variation in SnS_. Compounds of metal sulfide (2-x) on Se_x field effect devices, different content of Se SnS_ transport was prepared by chemical vapor transport (2-x) Se_x layered crystals, and the transfer characteristics and output characteristics of field effect devices corresponding to the 90 K to 295 K temperature range the findings were investigated. In the 90 K to 295 K in the whole temperature range, with the increase of Se content in X was higher than 1.2, the device at the gate voltage of -50 V to 50 V range impossible to "turn off". The type of contact between the crystal and metal electrode device in the channel will with the increasing shift to Schottky contact by an ohmic Se content. Starting from the band structure of the view of the relationship between the changing of performance changes and devices Se content at different temperatures were explained that the increase of Se content in fact is a kind of N type doping. Based on the measured The relationship between the channel resistance and temperature, from experimental and theoretical analysis of two aspects of the content of Se can activate effect on the size of crystal, shows that the model can describe the change of hydrogen content of Se accurately. The influence on the band structure and the changes of the band structure of the material is dielectric crystal the constant Se content caused by the different changes in the dominant crystal activation energy changes.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN386
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