發(fā)布時(shí)間：2019-04-16 18:49

【摘要】：采用溶膠-凝膠法在玻璃基片上制備摻鎵氧化鋅透明導(dǎo)電薄膜,用X射線(xiàn)衍射儀、掃描電子顯微鏡、紫外可見(jiàn)光分光光度計(jì)、霍爾效應(yīng)儀等測(cè)試分別表征GZO薄膜的晶體結(jié)構(gòu)、表面形貌、光電性能等,研究Ga摻雜量對(duì)GZO薄膜性能的影響。結(jié)果表明:所制備的GZO薄膜均為六方纖鋅礦結(jié)構(gòu)并有沿c軸擇優(yōu)生長(zhǎng)趨勢(shì),隨著Ga摻雜量的增加,薄膜透過(guò)率先增加再減小,當(dāng)Ga摻雜量為4at%時(shí)透過(guò)率最高,可見(jiàn)光區(qū)平均透過(guò)率達(dá)97.4%,薄膜電阻率則隨摻雜量增加而下降,在Ga摻雜量為5at%時(shí)達(dá)最小值7.62×10-3Ω·cm。
[Abstract]:Transparent conductive thin films of gallium-doped zinc oxide were prepared on glass substrates by sol-gel method. The crystal structure of GZO thin films was characterized by X-ray diffractometer, scanning electron microscope, UV-vis spectrophotometer and Hall effector. The effect of Ga doping content on the properties of GZO thin films was studied by surface morphology and photoelectric properties. The results show that the GZO thin films have hexagonal wurtzite structure and preferred growth trend along the c axis. With the increase of Ga doping content, the permeability of the films increases first and then decreases, and the transmittance is the highest when the content of Ga doping is 4 at%. The average transmittance in the visible region is up to 97.4%, and the resistivity of the film decreases with the increase of the doping content, and reaches the minimum value of 7.62 脳 10 脳 10 ~ 3 惟 cm. when the Ga doping content is 5 at%.
【作者單位】： 三峽大學(xué)材料與化工學(xué)院;桂林理工大學(xué)廣西新能源與建筑節(jié)能重點(diǎn)實(shí)驗(yàn)室;
【基金】：廣西建筑新能源與建筑節(jié)能重點(diǎn)實(shí)驗(yàn)室開(kāi)放基金(A0008)
【分類(lèi)號(hào)】：O484.1

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 張志勇,王雪文,趙武,周水仙,張紅;用溶膠-凝膠法制備SrTiO_3納米薄膜材料[J];西北大學(xué)學(xué)報(bào)(自然科學(xué)版);2000年05期

2 張學(xué)驁;吳文健;滿(mǎn)亞輝;劉長(zhǎng)利;;溶膠-凝膠法制備ITO薄膜研究進(jìn)展[J];材料科學(xué)與工藝;2007年02期

3 王根水,賴(lài)珍荃,李曉軍,孟祥建,孫t熇，

本文編號(hào)：2459008