【摘要】：為研究錳價態(tài)對摻雜氮化鎵薄膜的光學(xué)性質(zhì)影響,采用金屬有機物化學(xué)氣相沉積技術(shù)在不同的溫度下生長錳摻雜的氮化鎵外延薄膜材料。采用原子力顯微鏡探測不同溫度下生長的樣品表面;X射線光譜儀探測樣品中錳的化學(xué)價態(tài);光致熒光譜儀測量不同樣品的可見光段和紅外波段的光學(xué)性質(zhì)。測試結(jié)果表明在900~980℃溫度范圍,樣品表面平整無雜相;此范圍為優(yōu)化的生長溫度。其后,在優(yōu)化的生長溫度下,生長重?fù)诫s薄膜樣品;X光譜儀測試結(jié)果表明錳以2價或3價態(tài)形式代替鎵原子存在。光致熒光譜測試結(jié)果表明,除了在可見光的紫光波段,所有樣品均具有8個精細(xì)發(fā)光結(jié)構(gòu),不受生長溫度影響之外,在其他測試范圍,發(fā)光性質(zhì)取決于生長溫度。對于在低溫下生長的薄膜,可探測到較強的天藍(lán)色發(fā)光帶,這個發(fā)光帶是與鎵金屬在表面積累相關(guān);而對于在相對較高溫度下生長的薄膜,可探測到較強的紅外發(fā)光帶,并且具有零聲子線和聲子伴線的精細(xì)結(jié)構(gòu)特征。這個紅外發(fā)光帶是Mn~(3+)內(nèi)電子自旋允態(tài)的~5 T_2→~5 E躍遷而引起的展寬的零聲子線和聲子伴線;并且聲子伴線分別對應(yīng)于GaN特征拉曼散射峰。上述結(jié)果表明,生長溫度發(fā)生改變,氨氣分解產(chǎn)生變化,導(dǎo)致氮空位發(fā)生變化,可以使得錳摻雜氮化鎵中錳離子充電或放電,改變了價態(tài),從而改變了材料的光學(xué)性質(zhì)。此規(guī)律為人工制備具有不同光學(xué)性質(zhì)的材料提供參考。
[Abstract]:In order to study the effect of mn valence state on the optical properties of doped gallium nitride thin films, mn doped gan epitaxial films were grown by metal organic chemical vapor deposition (MOCVD) at different temperatures. Atomic force microscopy was used to detect the surface of samples grown at different temperatures; X-ray spectrometer was used to detect the chemical valence of manganese in the samples; photoluminescence spectrometer was used to measure the optical properties of visible and infrared bands of different samples. The test results show that the surface of the sample is smooth and free of impurity in the temperature range of 900 鈩，

本文編號：2454298