RF-PECVD法制備碳納米管的工藝研究
發(fā)布時(shí)間:2018-08-07 07:06
【摘要】: 碳納米管具有極其獨(dú)特的力學(xué)、熱學(xué)和電學(xué)性能,自其1991年被Lijima發(fā)現(xiàn)以來,受到廣泛關(guān)注。近年來,由于碳納米管具有優(yōu)異的場發(fā)射性能,期望將碳納米管的巨大潛力應(yīng)用在場效應(yīng)晶體管、場發(fā)射顯示器、單電子晶體管等納米電子器件以及集成電路中作為互連線等方面。但要想制備這些電子器件,碳納米管的合成溫度必須低于基板材料所能承受的溫度。例如,碳納米管作為場致電子發(fā)射源,應(yīng)用于冷陰極平面顯示器上,那么納米碳管的合成溫度應(yīng)低于顯示器玻璃的轉(zhuǎn)變溫度550℃。但是,目前CNTs的生長溫度一般都在800~1000℃,遠(yuǎn)高于集成電路中常用金屬Cu的熔點(diǎn)和顯示器玻璃的轉(zhuǎn)變溫度。所以即便在這種高溫條件下原位制備出了單個(gè)的CNTs納電子器件,也很難實(shí)現(xiàn)與傳統(tǒng)微電子工藝的高度兼容。等離子體增強(qiáng)化學(xué)氣相沉積法在低溫合成納米碳管方面具有很大的優(yōu)勢。 本文研究碳納米管的生長和結(jié)構(gòu)特性,所做的工作有以下幾方面: 1、利用磁控濺射法在Si襯底上制備Ni薄膜,然后再在制得的Ni膜上用PECVD法制備碳納米管薄膜。研究了襯底溫度對(duì)薄膜性能的影響,采用SEM和Raman對(duì)薄膜進(jìn)行了分析。 2、利用離子束濺射法在Si襯底上制備Fe薄膜,然后再在制得的Fe膜上用PECVD法制備碳納米管薄膜。研究了襯底溫度及射頻功率對(duì)薄膜性能的影響,分析了樣品的SEM、HRTEM、Raman等測試圖。 3、利用磁控濺射法在Cu襯底上制備Ni薄膜,然后再在制得的Ni膜上,在特定的反應(yīng)條件下,用PECVD法制備碳納米管薄膜。采用SEM和Raman對(duì)薄膜進(jìn)行了初步分析。 采用一系列測試手段分析了碳納米管薄膜的生長和結(jié)構(gòu)特性,結(jié)果表明,襯底溫度700~800℃的條件是比較適合碳納米管生長的。
[Abstract]:Carbon nanotubes (CNTs), which have unique mechanical, thermal and electrical properties, have attracted wide attention since their discovery by Lijima in 1991. In recent years, due to the excellent field emission properties of carbon nanotubes, it is expected that the great potential of carbon nanotubes will be applied to field-effect transistors, field emission displays. Nanoscale electronic devices such as single electron transistors and integrated circuits are used as interconnects. However, to fabricate these electronic devices, the synthesis temperature of carbon nanotubes must be lower than the substrate material can withstand. For example, when carbon nanotubes (CNTs) are used as field-induced electron emitters in cold cathode flat displays, the synthesis temperature of CNTs should be lower than the transition temperature of glass at 550 鈩,
本文編號(hào):2169255
[Abstract]:Carbon nanotubes (CNTs), which have unique mechanical, thermal and electrical properties, have attracted wide attention since their discovery by Lijima in 1991. In recent years, due to the excellent field emission properties of carbon nanotubes, it is expected that the great potential of carbon nanotubes will be applied to field-effect transistors, field emission displays. Nanoscale electronic devices such as single electron transistors and integrated circuits are used as interconnects. However, to fabricate these electronic devices, the synthesis temperature of carbon nanotubes must be lower than the substrate material can withstand. For example, when carbon nanotubes (CNTs) are used as field-induced electron emitters in cold cathode flat displays, the synthesis temperature of CNTs should be lower than the transition temperature of glass at 550 鈩,
本文編號(hào):2169255
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