發(fā)布時間：2018-06-21 05:31

  本文選題：ZAO + 溶膠凝膠方法��； 參考：《南京航空航天大學》2011年碩士論文

【摘要】：利用溶膠凝膠法,在石英玻璃的基底上沉積了鑭系稀土元素和Al共摻的ZnO薄膜,利用了XRD衍射和SEM分別研究了薄膜的結(jié)構(gòu)和表面形貌。在不同Er摻雜濃度和退火溫度下研究了ZAOEr薄膜在8~14μm的紅外發(fā)射率和光學性質(zhì)。 ZAOEr薄膜具有六方纖鋅礦的結(jié)構(gòu),并且沿(002)晶向擇優(yōu)生長,可見光范圍內(nèi)的透光率在85%以上。薄膜的禁帶寬度會隨著Er含量的增加而出現(xiàn)紅移。當激發(fā)波長為290nm時,可觀察到一個紫光發(fā)射和藍光發(fā)射。當激發(fā)波長為370nm,可觀察到一個強烈的綠光發(fā)射。CL譜中305nm處出現(xiàn)的紫外峰與Er~(3+)的摻雜有關(guān)。大體上,隨著熱處理溫度的升高,ZAOEr薄膜的紅外發(fā)射率呈下降趨勢,并且在退火溫度為900℃,Er摻雜濃度為2 at.%時其紅外發(fā)射率最小,為0.749。 研究了不同稀土元素(Y~(3+)、La~(3+)、Ce~(3+)、Pr~(3+)、Nd~(3+)、Sm~(3+)、Eu~(3+)、Gd~(3+)、Tb~(3+)、Dy~(3+)、Ho~(3+)、Er~(3+)、Yb~(3+)和Lu~(3+))摻雜的ZAOR薄膜的紅外發(fā)射率和光學性質(zhì),ZAOR薄膜在可見光的透光率在85%以上,和ZAO薄膜相比,隨著稀土元素的摻入,禁帶寬度出現(xiàn)了減小,當激發(fā)波長為370nm時,可觀察到強烈的綠光發(fā)射峰,其中ZAOGd薄膜的綠光發(fā)射峰強度最強。ZAONd薄膜具有最小的紅外發(fā)射率0.753。陰極熒光譜中310nm左右出現(xiàn)的紫外峰與稀土離子的摻雜有關(guān)。 研究了不同轉(zhuǎn)速條件下ZnO,ZAO和ZAOEr顯微形貌的影響,探討了不同轉(zhuǎn)速對薄膜透光性能和光致發(fā)光性能的影響,轉(zhuǎn)速在2000rpm時的(002)峰的強度要高于其他轉(zhuǎn)速條件。同時純ZnO薄膜的C軸擇優(yōu)取向性要強于摻雜后的薄膜。隨著轉(zhuǎn)速的升高,薄膜致密性下降,孔隙增多。ZnO薄膜近帶邊發(fā)射峰隨著Al~(3+)和Er~(3+)的摻入,強度下降,深能級發(fā)射峰則進一步增強,隨著轉(zhuǎn)速的降低,深能級發(fā)射峰的強度逐漸升高。
[Abstract]:Lanthanide rare earth elements and Al co-doped ZnO thin films were deposited on quartz glass substrates by sol-gel method. The structure and surface morphology of the films were investigated by XRD and SEM, respectively. The infrared emissivity and optical properties of ZAOEr thin films at 814 渭 m have been studied at different er doping concentrations and annealing temperatures. ZAOEr thin films have hexagonal wurtzite structure and preferential growth along the crystal direction. The transmittance of visible light is more than 85%. The band gap of the film will shift red with the increase of er content. When the excitation wavelength is 290nm, a purple emission and blue emission can be observed. When the excitation wavelength is 370 nm, it is observed that the UV peak at 305nm in the green emission. CL spectrum is related to the doping of Ernion 3). In general, the infrared emissivity of ZAOEr thin films decreases with the increase of heat treatment temperature, and the infrared emissivity is 0.749 when the annealing temperature is 900 鈩，

本文編號：2047435