【摘要】：選用敏感材料鋯鈦酸鉛(PZT),優(yōu)化微機電系統(tǒng)(MEMS)微加工工藝,制作了硅基PZT壓電薄膜叉指式電極結(jié)構(gòu)的MEMS壓力傳感器。在基體Au/Ti/LNO/SiO_2/Si100上,采用溶膠-凝膠(Sol-Gel)法,在650℃高溫下采用分層退火的方式進行退火,得到厚1.2μm的PZT壓電薄膜。薄膜表面均勻,無裂紋。利用光刻工藝和低壓濺射工藝得到平行叉指電極。制作完成PZT壓電薄膜結(jié)構(gòu)的微壓力傳感器,在彈性薄膜上施加壓力,其電壓輸出性能較好,說明基于壓電薄膜的叉指電極結(jié)構(gòu)可行,為基于納米纖維結(jié)構(gòu)的微壓力傳感器的制作奠定了理論基礎。
[Abstract]:Using lead zirconate titanate (PZT),) as a sensitive material to optimize the (MEMS) micromachining process of MEMS, a MEMS pressure sensor with PZT piezoelectric thin film electrode structure on silicon substrate has been fabricated. PZT piezoelectric thin films with a thickness of 1.2 渭 m were obtained by using sol-gel (Sol-Gel) method and layering annealing at 650 鈩，

本文編號：2196966