【摘要】：InGaAs半導(dǎo)體單光子探測(cè)器具備探測(cè)性能強(qiáng),集成度高等優(yōu)勢(shì),在光譜分析和量子通信等領(lǐng)域有廣泛的應(yīng)用.本文以ID Quantique公司出品的ID-201半導(dǎo)體單光子計(jì)數(shù)器為研究對(duì)象,結(jié)合計(jì)數(shù)器核心部件雪崩光電二極管的工作原理探究其計(jì)數(shù)光子時(shí)的內(nèi)部過(guò)程,推導(dǎo)出每秒鐘光子計(jì)數(shù)值和該計(jì)數(shù)器幾個(gè)重要參數(shù)觸發(fā)頻率(trigger frequency),門脈沖寬度(gate width),門強(qiáng)制關(guān)閉時(shí)間(dead time),探測(cè)效率(detection efficiency)之間的數(shù)學(xué)表達(dá)式.推導(dǎo)過(guò)程著重分析了計(jì)數(shù)門脈沖的關(guān)閉效應(yīng)對(duì)光子探測(cè)概率的影響.首先利用泊松分布求解光子計(jì)數(shù)值與探測(cè)效率(detection efficiency)之間的關(guān)系,然后將計(jì)數(shù)過(guò)程分成兩大部分,分析計(jì)數(shù)結(jié)果與門強(qiáng)制關(guān)閉時(shí)間(dead time)之間關(guān)系.求解得表達(dá)式后,利用1550nm激光器作為ID-201的輸入光源,在各種不同實(shí)驗(yàn)條件下,對(duì)該表達(dá)式的正確性進(jìn)行了檢驗(yàn).
[Abstract]:InGaAs semiconductor single photon detector has many advantages such as high detection performance and high integration. It has been widely used in the field of spectrum analysis and quantum communication. In this paper, the single photon counter of ID-201 semiconductor produced by ID Quantique Company is taken as the research object, and the internal process of counting photon is explored by combining the working principle of avalanche photodiode, the core component of the counter. The mathematical expressions between the photon count value per second and several important parameters of the counter triggering frequency (trigger frequency), gate pulse width (gate width), gate forced closing time (dead time), detection efficiency (detection efficiency) are derived. The influence of the closing effect of counting gate pulse on the photon detection probability is analyzed. Firstly, Poisson distribution is used to solve the relationship between photon counting value and detection efficiency (detection efficiency), then the counting process is divided into two parts, and the relationship between counting results and gate forced closing time (dead time) is analyzed. After the expression is solved, the correctness of the expression is verified by using 1550nm laser as the input light source of ID-201 under various experimental conditions.
【作者單位】： 南京大學(xué)電子科學(xué)與工程學(xué)院;
【分類號(hào)】：TH724

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本文編號(hào)：2298286