Electronic and optical properties are obtained with the increase in indium alloy content（x）in a Ga_1-xIn_xN/Al_0.2Ga_0.8N quantum dot.The barrier height with the different In alloy contents is applied to acquire the confinement potentials.The results are obtained taking into consideration geometrical confinement effect.The optical absorption coefficient with the photon energy is observed in a Ga_1-xIn_xN/Al_0.2Ga_0.8... 

【文章頁數(shù)】：7 頁

【文章目錄】：
1. Introduction
2. Model and calculations
3. Results and discussion
4. Conclusion



本文編號：3656753