SrTiO₃（STO） and TiO₂ are insulating materials with large dielectric constants and opposite signs of the quadratic coefficient of voltage（α）. Insertion of a TiO₂ thin film between STO layers increases the linearity of the capacitance in response to an applied voltage, to meet the increasing demand of large-capacitance-density dynamic random access memory capacitors. Both STO and TiO₂ suffer from the problem of high leakage current owing to their almost ... 

【文章來(lái)源】：Chinese Physics B. 2017,26(01)EISCI

【文章頁(yè)數(shù)】：4 頁(yè)


本文編號(hào)：3142799