【摘要】：采用數(shù)值模擬和理論分析方法,研究了圓波導內(nèi)置n-Si探測結構對X波段幾種常用電磁波模式的電場響應。首先基于強電場下的熱載流子效應,設計了一種利用n-Si進行高功率脈沖實時測量的圓波導探測結構。接著采用三維并行電磁場時域有限差分方法,模擬研究并分析了TE11(兩種極化方向)、TM01和TE01模式作用下圓波導探測結構內(nèi)的橫向電場分布特點。結果表明:不同模式下探測芯片內(nèi)的橫向電場均以徑向電場為主,徑向和角向電場幅度比約為10,而芯片在圓波導內(nèi)引入的橫向電場駐波比均不大于1.3。最后推導了圓波導探測結構在不同模式電場作用下的靈敏度表達式,理論分析指出了探測結構的最大承受功率與圓波導模式有關,最高可達422MW,響應時間則均為ps量級,初步證實了該探測結構可用于X波段百MW級脈沖波源在線探測的可行性。
[Abstract]:By numerical simulation and theoretical analysis, the electric field response of circular waveguide built-in n-Si detection structure to several common electromagnetic wave modes in X-band is studied. Firstly, based on the hot carrier effect in strong electric field, a circular waveguide detection structure using n-Si for real-time measurement of high power pulse is designed. Then the transverse electric field distribution in the circular waveguide probe structure under the action of TE11 (two polarization directions) TM01 and TE01 mode is simulated and analyzed by using the 3D parallel finite difference time-domain (FDTD) method. The results show that the transverse electric field in the chip is mainly radial electric field in different modes, the amplitude ratio of radial and angular electric field is about 10, and the standing wave ratio of transverse electric field introduced by chip in circular waveguide is not more than 1.3. Finally, the sensitivity expressions of circular waveguide structures under different modes of electric field are derived. The theoretical analysis shows that the maximum withstand power of the structures is related to the circular waveguide modes, with a maximum of 422MW, and the response time is of the order of ps. It is preliminarily proved that the structure can be used for the on-line detection of 100 MW pulse wave sources in X band.
【作者單位】： 西北核技術研究所;高功率微波技術重點實驗室;
【基金】：國家自然科學基金重點項目(61231003)
【分類號】：TN814

【參考文獻】

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