發(fā)布時(shí)間：2018-07-25 08:12

【摘要】：論文的研究目的是通過(guò)對(duì)某高功率音頻放大對(duì)管的研究與仿真優(yōu)化設(shè)計(jì),提出一種使器件的二次擊穿電流得到提升的新穎結(jié)構(gòu)。通過(guò)改善發(fā)射極電流集邊效應(yīng)引發(fā)的二次擊穿問(wèn)題,從而能夠提高本產(chǎn)品安全工作區(qū)的范圍�；诒緦�(shí)驗(yàn)室與國(guó)內(nèi)某知名半導(dǎo)體公司合作研發(fā)項(xiàng)目,并通過(guò)產(chǎn)品工藝及版圖結(jié)構(gòu)的改進(jìn),達(dá)到產(chǎn)品參數(shù)指標(biāo)的要求。文中對(duì)一款具有新穎結(jié)構(gòu)的高功率音頻放大對(duì)管進(jìn)行仿真優(yōu)化設(shè)計(jì),首先對(duì)高功率音頻放大對(duì)管的各個(gè)物理參數(shù)的設(shè)計(jì),設(shè)計(jì)了各個(gè)區(qū)的摻雜濃度,擴(kuò)散系數(shù),遷移率,擴(kuò)散長(zhǎng)度和壽命等,并且確定了器件的縱向參數(shù)等。然后對(duì)器件縱向結(jié)構(gòu)設(shè)計(jì),并且通過(guò)仿真軟件對(duì)工藝流程和元胞結(jié)構(gòu)設(shè)計(jì)完成了仿真模擬,通過(guò)器件和工藝的聯(lián)合仿真,然后對(duì)元胞結(jié)構(gòu)和工藝參數(shù)進(jìn)行仿真優(yōu)化設(shè)計(jì),最終確定了設(shè)計(jì)器件制作的主要工藝參數(shù)和版圖設(shè)計(jì),并討論關(guān)鍵工藝步驟的實(shí)現(xiàn)方式。對(duì)上述設(shè)計(jì)的高功率音頻放大對(duì)管進(jìn)行流片測(cè)試,最終測(cè)試參數(shù)如下:PNP管:BVCBO=-307.1V,ICBO=-13.24nA,BVCEO=-287.4V,ICEO=-25.3nA,BVEBO=-9.13V,IEBO=-18.84nA,VCE(sat)=-0.14V,VBE(sat)=-0.93V,ICM=12.5A,HFE=86,ISB=3A;NPN管:BVCBO=348.2V,ICBO=29.09nA,BVCEO=285.6V,ICEO=520.5nA,BVEBO=8.26V,IEBO=29.87nA,VCE(sat)=0.12V,VBE(sat)=0.92V,ICM=12A,HFE=115,ISB=3.5A。通過(guò)流片后的各項(xiàng)測(cè)試結(jié)果顯示,所設(shè)計(jì)的高功率音頻放大對(duì)管器件靜態(tài)參數(shù)滿足設(shè)計(jì)要求,并具有較高的二次擊穿電流值。
[Abstract]:The purpose of this paper is to propose a novel structure to enhance the secondary breakdown current of the device by studying and optimizing the design of a high power audio amplifier pair. By improving the secondary breakdown caused by the edge effect of emitter current, the range of the safe working area of this product can be increased. Based on the R & D project of our laboratory and a famous semiconductor company in China, and through the improvement of product process and layout structure, we can meet the requirements of product parameters. In this paper, a novel high power audio amplifier is simulated and optimized. Firstly, the doping concentration, diffusion coefficient, mobility of each region are designed for each physical parameter of high power audio amplifier. The diffusion length and lifetime are also determined, and the longitudinal parameters of the device are determined. Then, the longitudinal structure of the device is designed, and the process flow and cell structure are simulated by simulation software, and then the cell structure and process parameters are simulated and optimized by the joint simulation of the device and the process. Finally, the main process parameters and layout design are determined, and the key process steps are discussed. 瀵逛笂榪拌璁＄殑楂樺姛鐜囬煶棰戞斁澶у綆¤繘琛屾祦鐗囨祴璇，

本文編號(hào)：2143186