本文關鍵詞：直流電作用下液—固金屬體系的潤濕行為與界面特征　出處：《吉林大學》2015年博士論文　論文類型：學位論文

  更多相關文章： 直流電 潤濕性 金屬 表面與界面 電遷移

【摘要】：近年來,作為一項新興的材料加工和制備輔助技術(shù),施加電流(電場)的方法在工業(yè)生產(chǎn)中獲得了越來越廣泛的應用。例如,人們發(fā)現(xiàn)當對燒結(jié)體施加壓力的同時施以脈沖直流電(SPS)時,燒結(jié)體中通常會有液相出現(xiàn),與傳統(tǒng)燒結(jié)方法相比,燒結(jié)進程可以在較低溫度和較短時間內(nèi)完成,并且獲得的燒結(jié)體往往具備更優(yōu)異的性能;對燃燒合成體系施加直流電可以顯著的提升反應率和合成速度。此外,由于三維集成電路中覆晶焊點直徑的小型化趨勢,釬焊界面往往形成很高的電流密度以及很大的焦耳熱,高溫能夠迫使低熔點的焊球局部發(fā)生熔化。有研究指出,焊點合金的液化是其服役早期發(fā)生失效的主要原因。雖然如此,人們對于電流在這些應用領域作用機制的認識仍然十分有限。由于上述應用均涉及到液/固界面的交互作用,我們有理由推測電流可能是通過影響液/固界面的潤濕、傳質(zhì)以及化學反應來改變這些進程。然而,目前對于電流作用下液/固體系潤濕性以及界面反應的研究還非常少。因此,本文系統(tǒng)研究了電流作用下金屬熔體在金屬基板上的潤濕行為和界面結(jié)構(gòu)轉(zhuǎn)變,揭示電流作用下界面潤濕機制和影響規(guī)律,為利用電流調(diào)控潤濕性和界面結(jié)構(gòu)奠定基礎。本文的主要研究結(jié)果如下:1.以Sn/(Ni、Cu、Fe)以及Sn57Bi/Cu為代表,研究了直流電作用下化學反應體系的潤濕行為和結(jié)構(gòu)轉(zhuǎn)變。研究發(fā)現(xiàn),施加電流引發(fā)的電遷移效應和熔體內(nèi)部復雜的對流能夠顯著促進基板的溶解和界面化學反應。兩者獨立或協(xié)同的作用能夠破除三相線前沿的氧化膜,從而改善體系的潤濕。而當金屬基板表面“干凈”時,電流對于體系潤濕的影響十分有限,但卻顯著地改變了界面結(jié)構(gòu)。2.以Bi/Cu體系為代表,研究了直流電對純?nèi)芙庑腕w系潤濕行為的影響。直流電引發(fā)焦耳熱效應使熔滴表面的頂部和三相線附近產(chǎn)生了表面張力的梯度,從而導致了Marangoni對流的發(fā)生,Marangoni對流促進了Cu向Bi溶解,而當電子流向熔體時,電遷移力能夠進一步促進基板的溶解。3.在Sn(Sn57Bi)/Cu體系中,直流電對于金屬熔體Sn(Sn57Bi)與金屬Cu基板之間的傳質(zhì)和界面反應影響很大。隨著電流密度的增大,陰極Cu基板的溶解不斷加劇,溶解的Cu原子在電遷移力的驅(qū)動下向陽極端遷移,從而使陽極端的Cu基板溶解受到抑制,并在其附近形成大量的金屬間化合物。4.推導并計算了Cu在Sn熔體中擴散的有效電荷數(shù)目以及電遷移力的數(shù)值。陰極端Cu溶解的激活能約為不通電條件下溶解激活能的一半,表明施加電流能夠顯著降低陰極端Cu溶解的激活能,而電遷移力是促進Cu原子擴散的重要原因。5.以Sn/W和Bi/Fe為代表,研究了直流電作用下存在微量溶解體系的潤濕行為。發(fā)現(xiàn)電流引發(fā)的微量溶解以及電磁力作用對潤濕性幾乎沒有任何影響。總之,通過對電流作用下不同類型金屬-金屬體系的潤濕和界面研究,不僅有助于豐富電流耦合作用下的界面潤濕和傳質(zhì)理論,而且能夠為通電條件下先進材料的連接和材料服役行為的控制提供參考和指導。
[Abstract]:In recent years, as a new material processing and preparation of assistive technology, applied current (electric field) method has been widely used in industrial production. For example, people found that while putting pressure on the sintered body with pulsed direct current (SPS), usually in the sintered body in liquid phase there, compared with the traditional sintering method, the sintering process can be completed in a relatively low temperature and short time, and get the sintered body tend to have more excellent performance; DC power is applied to the combustion synthesis system can improve the reaction rate significantly and the synthesis speed. In addition, due to the miniaturization trend of three-dimensional integrated circuits in flip chip solder joints the diameter of the brazing interface is often formed in high current density and high Joule heat, high temperature and low melting point solder ball can force the local melt. Some research pointed out that the solder alloy liquefaction is its service early The main reason of failure. However, the understanding of mechanism of current in these areas is still very limited. Because of the above application are related to the interaction of liquid / solid interface, we have reason to suppose that the current may be affected by wetting liquid / solid interface, mass transfer and chemical reaction process. However, these changes at present, the current under the action of liquid / solid on wettability and interfacial reaction are very small. Therefore, this paper studies the change of wetting behavior and interfacial structure of metal melt under electric current on the metal substrate, revealing the current role of interfacial wetting mechanism and the influence rule, to lay the foundation for the current regulation of wettability and the interface structure. The main results of this thesis are as follows: 1. to Sn/ (Ni, Cu, Fe and Sn57Bi/Cu) as the representative of the chemical reaction system, DC power under the effect of wetting behavior and Structure change. The study found that electric convection complex internal migration effect and the melt can significantly promote the applied current caused by the dissolution and interfacial chemical reaction substrate. The two independent or synergistic effect can get rid of the three phase front oxide film, so as to improve the system. When the metal substrate surface wetting and "clean", the influence of current system for wetting is very limited, but it significantly changed the structure of the.2. interface in the Bi/Cu system, studied the effect of DC on the wetting behavior of pure dissolution system. DC Joule heating effect caused by the surface tension gradient near the top surface of the droplet and the three-phase line, which leads to the occurrence of Marangoni convection Marangoni, Cu Bi to promote convective dissolution, and when the electron flow to melt, electromigration force can further promote the dissolution of.3. substrate in Sn (Sn57Bi) /Cu system, DC Electric for molten metal Sn (Sn57Bi) and the mass transfer and the interfacial reaction between the metal substrate Cu influence. With the increase of current density, cathode dissolved Cu substrate increased, driving force in the migration of Cu atoms dissolved under extreme Xiangyang electric migration, so that the Cu substrate dissolved Yang extreme is inhibited, and in in the vicinity of the formation of a large number of intermetallic compound.4. is derived and the effective charge number of Cu diffusion in Sn melt was calculated and numerical electromigration force. Cathode dissolution of Cu activation energy of electricity under the condition of dissolution activation energy of half, Biao Mingshi and current can significantly reduce the activation energy of Cu dissolved and extreme Yin. The electromigration force is.5. an important reason for promoting the diffusion of Cu atoms with Sn/W and Bi/Fe as the representative, to study the existence of wetting behavior of trace dissolved system under the action of DC current caused by the dissolved trace. And the electromagnetic force With almost no influence on the wettability and interfacial wetting. In a word, through the study of different types of metal under the function of the current system, not only has the wettability and mass transfer theory can help to enrich the current under the coupling effect, but also for advanced materials electricity under the condition of even the service behavior of connection and control of materials and guidance.

【學位授予單位】：吉林大學
【學位級別】：博士
【學位授予年份】：2015
【分類號】：TG111

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