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氯化鹽體系對(duì)β-SiC形貌影響的研究

發(fā)布時(shí)間:2018-07-05 00:07

  本文選題:SiC顆粒 + 氯化鹽。 參考:《無(wú)機(jī)鹽工業(yè)》2017年08期


【摘要】:碳化硅以其優(yōu)異的性能廣泛應(yīng)用于航空航天、軍工、冶金、化工、能源和機(jī)械等領(lǐng)域。采用熔鹽法,以β-Si C為原料,復(fù)合氯鹽(Na Cl-KCl)為熔鹽,研究了熔鹽各種工藝參數(shù)的變化對(duì)碳化硅形貌、振實(shí)密度和粉體粒徑等的影響。實(shí)驗(yàn)結(jié)果表明,Na Cl-KCl熔鹽體系配比為m(Si C)∶m(Na Cl-KCl)=1∶1.2、溫度為800℃、保溫時(shí)間為10 h時(shí),碳化硅粉體整形效果最佳。
[Abstract]:Silicon carbide is widely used in aerospace, military industry, metallurgy, chemical industry, energy and machinery for its excellent performance. The effects of various technological parameters of molten salt on the morphology, vibrational density and particle size of silicon carbide were studied by means of molten salt method, 尾 -Si C as raw material and complex chloride salt (NaCl-KCl) as molten salt. The experimental results show that when the ratio of Na Cl-KCl molten salt is m (sic): M (Na Cl-KCl) 1: 1.2, the temperature is 800 鈩,

本文編號(hào):2098058

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