本文選題：玻璃陶瓷　切入點(diǎn)：CBGA　出處：《電子科技大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：在高速發(fā)展的微電子技術(shù)推動(dòng)下,電子系統(tǒng)正朝著超大規(guī)�；�、高度集成化、多功能微型化方向發(fā)展,而在電子產(chǎn)品中最重要的部件是芯片。在芯片二級(jí)封裝中,使用了多層陶瓷基板球柵陣列封裝技術(shù)(CBGA),為了防止基板與印刷電路板(PCB)的熱膨脹系數(shù)(CTE)不匹配而導(dǎo)致焊點(diǎn)失效,損壞芯片,則需要研究高熱膨脹系數(shù)的低溫共燒(LTCC)基板材料。在成熟的鋇硼硅玻璃陶瓷體系中,仍存在熱膨脹系數(shù)曲線線性度差的問(wèn)題。經(jīng)查閱文獻(xiàn),發(fā)現(xiàn)鈣硼硅玻璃具有高線性度的熱膨脹系數(shù)曲線,于是用CaO部分取代BaO來(lái)研究鋇硼硅玻璃陶瓷的性能,結(jié)果顯示,材料體系的CTE值曲線的線性度變好。在此基礎(chǔ)上,研究CaO完全取代BaO后新體系鈣硼硅玻璃陶瓷的性能,這是一種鈣硼硅系玻璃加石英砂的材料,在950℃下采用傳統(tǒng)固相法燒結(jié)。通過(guò)對(duì)不同配方組成進(jìn)行實(shí)驗(yàn),研究該材料體系晶相含量、抗彎強(qiáng)度、熱膨脹系數(shù)、介電性能和微觀性能等方面的性能,發(fā)現(xiàn)主晶相為石英相與硅灰石,CaO含量的增加抑制了方石英相析出,α-方石英與β-方石英間會(huì)引起體積變化的相轉(zhuǎn)變減少,從而獲得比之前更高線性度的CTE值曲線。硅灰石作為新晶相,當(dāng)為三斜晶系的針狀結(jié)構(gòu)時(shí),能夠極大地提升玻璃陶瓷抗彎強(qiáng)度,但由于該晶相的CTE值較小,約為6.5ppm/℃,會(huì)導(dǎo)致樣品總的CTE值減小。當(dāng)CaO含量為40wt%時(shí),鈣硼硅玻璃陶瓷可獲得高機(jī)械強(qiáng)度222.5MPa,CTE值達(dá)到9.39ppm/℃,且具備高線性度的CTE值曲線及優(yōu)良介電性能;在石英砂含量為35wt%時(shí),熱膨脹系數(shù)提高至11.8 ppm/℃,并具備一定的抗彎強(qiáng)度150MPa,能夠滿足CBGA封裝的要求。同時(shí)也發(fā)現(xiàn)過(guò)量的CaO或Si02都會(huì)惡化玻璃陶瓷的微觀結(jié)構(gòu),降低性能。最后對(duì)鈣硼硅玻璃陶瓷進(jìn)行了析晶動(dòng)力學(xué)、燒結(jié)動(dòng)力學(xué)及熱膨脹系數(shù)理論計(jì)算的深入研究,采用Kissinger法計(jì)算樣品析晶活化能E,Ozawa法計(jì)算析晶指數(shù)n,發(fā)現(xiàn)過(guò)量CaO使能量勢(shì)壘提高,樣品從表面結(jié)晶變?yōu)轶w析晶;燒結(jié)激活能的計(jì)算結(jié)果顯示,CaO增加會(huì)抑制石英及方石英析出,石英和方石英之間、方石英不同晶型間的轉(zhuǎn)化都會(huì)變少,激活能降低,使得燒結(jié)收縮難度變低;通過(guò)對(duì)比氧化物法和晶相法計(jì)算熱膨脹系數(shù)的理論值與實(shí)際值差距,發(fā)現(xiàn)晶相是影響該材料體系CTE大小的關(guān)鍵,氧化物法計(jì)算誤差較大,晶相法可用于今后對(duì)新玻璃陶瓷體系的配方設(shè)計(jì)和性能預(yù)測(cè)。
[Abstract]:Driven by the rapid development of microelectronics technology, electronic systems are developing towards super-large scale, highly integrated and multifunctional miniaturization. The most important component in electronic products is chip. In order to prevent the thermal expansion coefficient (CTE) mismatch between the substrate and the printed circuit board (PCB), the multilayer ceramic substrate ball grid array packaging technology is used to prevent the failure of the solder joint and the damage to the chip, in order to prevent the mismatch of the thermal expansion coefficient of the substrate and the printed circuit board (PCB). It is necessary to study the low temperature co-fired LTCC substrate material with high thermal expansion coefficient. In the mature barium borosilicate glass ceramic system, there is still the problem of poor linearity of the thermal expansion coefficient curve. The thermal expansion coefficient curve of Calcium-Borosilicate glass is found to be of high linearity, so the properties of barium borosilicate glass ceramics are studied by replacing BaO with CaO. The results show that the linearity of CTE value curve of the material system becomes better. The properties of a new system of calcium borosilicate glass ceramics after replacing BaO completely by CaO were studied. It is a kind of material of calcium boron silicon system glass and quartz sand, sintered by traditional solid state method at 950 鈩，

本文編號(hào)：1636380