本文關(guān)鍵詞： 化學(xué)氣相沉積 電磁耦合場(chǎng) 金剛石 石墨 納米尖錐 場(chǎng)致電子發(fā)射　出處：《表面技術(shù)》2017年08期 　論文類(lèi)型：期刊論文

【摘要】：目的提高碳素薄膜的場(chǎng)發(fā)射性能。方法在熱絲化學(xué)氣相沉積(HFCVD)技術(shù)的基礎(chǔ)上,針對(duì)不同的甲烷濃度(體積分?jǐn)?shù),全文同)1%和5%,通過(guò)施加外場(chǎng)(電場(chǎng)、磁場(chǎng)以及電磁耦合場(chǎng))分別調(diào)控出不同組織結(jié)構(gòu)的薄膜。采用SEM觀察薄膜的表面形貌,用Raman檢測(cè)薄膜的成分,用場(chǎng)發(fā)射測(cè)試裝置來(lái)表征薄膜的場(chǎng)發(fā)射性能。結(jié)果外場(chǎng)作為革新傳統(tǒng)工藝的手段,可以影響HFCVD沉積過(guò)程。磁場(chǎng)的主要作用是降低晶粒尺寸,電場(chǎng)能夠有效促進(jìn)sp~3相向sp~2相轉(zhuǎn)變,電磁耦合場(chǎng)在此基礎(chǔ)上,還可以有效調(diào)控出高長(zhǎng)徑比的表面形貌。甲烷濃度為1%時(shí),制備了金剛石薄膜,開(kāi)啟電場(chǎng)為11.2 V/μm,加入電場(chǎng)或電磁耦合場(chǎng)后,薄膜表面被刻蝕,發(fā)生金剛石向石墨的轉(zhuǎn)變,開(kāi)啟電場(chǎng)降低到6.75 V/μm,場(chǎng)發(fā)射性能提高。甲烷濃度為5%時(shí),加入磁場(chǎng)、電場(chǎng)制備的薄膜,開(kāi)啟電場(chǎng)由12.75 V/μm依次下降為11.5、9 V/μm,電磁耦合場(chǎng)的刻蝕作用可以獲得尖錐狀的形貌,且石墨相含量高,開(kāi)啟電場(chǎng)最低(5.65 V/μm),場(chǎng)發(fā)射性能最好。結(jié)論采用外場(chǎng)(電場(chǎng)、磁場(chǎng)以及電磁耦合場(chǎng))輔助HFCVD的方式可以制備出多種薄膜,電磁耦合場(chǎng)在較高甲烷濃度時(shí),不但可以提高石墨相含量,還可以獲得高長(zhǎng)徑比的表面形貌,可有效提高薄膜的場(chǎng)發(fā)射性能。
[Abstract]:Objective to improve the field emission properties of carbon thin films. Methods based on the hot filament chemical vapor deposition (HFCVD) technique, different concentrations of methane (volume fraction, 1% and 5%) were studied. The films with different structure were regulated by external field (electric field, magnetic field and electromagnetic coupling field). The surface morphology of the film was observed by SEM and the composition of the film was detected by Raman. The field emission test device was used to characterize the field emission properties of the films. Results as a means of innovating the traditional process, the external field can affect the deposition process of HFCVD. The main function of magnetic field is to reduce the grain size. The electric field can effectively promote the phase transition from sp~3 to sp~2. On the basis of the electromagnetic coupling field, the surface morphology of the ratio of height to diameter can be effectively controlled. Diamond thin films are prepared when the methane concentration is 1. The opening electric field is 11.2 V / 渭 m. When the electric field or electromagnetic coupling field is added, the surface of the film is etched, and the transition of diamond to graphite occurs, and the open electric field decreases to 6.75 V / 渭 m. The field emission performance is improved. When methane concentration is 5, the film prepared by adding magnetic field and electric field decreases from 12.75 V / 渭 m to 11.59 V / 渭 m in turn. The electromagnetically coupled field etching can obtain sharp conical morphology, high graphite phase content, the lowest open electric field (5.65 V / 渭 m), and the best field emission performance. Conclusion the external field (electric field) is used. Many kinds of films can be prepared by magnetic field and electromagnetic coupling field (HFCVD). When the concentration of methane is high, the content of graphite phase can be increased. The surface morphology of the films with high aspect ratio can also be obtained, and the field emission properties of the films can be improved effectively.
【作者單位】： 中南大學(xué)材料科學(xué)與工程學(xué)院;中南大學(xué)粉末冶金研究所;
【基金】：國(guó)家自然科學(xué)基金資助項(xiàng)目(51301211,21271188)~~
【分類(lèi)號(hào)】：TB383.2;TQ127.11
【正文快照】： Received:2017-02-12;Revised:2017-03-12innovating traditional crafts,external field could influence the deposition process of CVD.The magnetic field could reducegrain size while electric field could effectively promotetranformation from sp3 phase to sp2 p

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