【摘要】：介紹了藍(lán)寶石材料的亞表面損傷形成機(jī)制�？紤]碳化硼磨料可產(chǎn)生較小亞表面損傷的優(yōu)點(diǎn),本文基于游離磨料研磨方式,研究了不同粒度碳化硼磨料研磨后藍(lán)寶石晶體的亞表面損傷。利用KOH化學(xué)腐蝕處理技術(shù),對(duì)研磨后的樣品進(jìn)行了刻蝕;通過(guò)特定的腐蝕坑圖像間接反映了藍(lán)寶石晶體的亞表面損傷形貌特征,獲得了W20、W10和W5碳化硼磨料產(chǎn)生的亞表面損傷深度,得到了在不同刻蝕時(shí)間下藍(lán)寶石亞表面損傷形貌、表面粗糙度和刻蝕速率。研究結(jié)果顯示:游離碳化硼磨料研磨造成的藍(lán)寶石晶體的亞表面損傷密度相當(dāng)顯著,但損傷深度并不大,其隨磨料粒度的增大而增大,W20、W10和W5粒度的磨料研磨后產(chǎn)生的亞表面損傷深度分別為7.4,4.1和2.9μm,約為磨料粒度的1/2。得到的結(jié)果表明采用碳化硼磨料研磨有利于獲得低亞表面損傷的藍(lán)寶石晶片,而采用由大到小的磨料逐次研磨可以快速獲得低亞表面損傷的藍(lán)寶石晶片。
[Abstract]:The subsurface damage formation mechanism of sapphire materials is introduced. Considering the advantage that boron carbide abrasive can produce small subsurface damage, the subsurface damage of sapphire crystal after boron carbide abrasive grinding with different particle sizes has been studied based on free abrasive grinding method. The samples after grinding were etched by KOH chemical corrosion treatment technology. The subsurface damage morphology of sapphire crystal is indirectly reflected by specific corrosion pit images. The subsurface damage depth produced by W20, W10 and W5 boron carbide abrasives is obtained, and the subsurface damage morphology of sapphire under different etch time is obtained. Surface roughness and etch rate. The results show that the subsurface damage density of sapphire crystal caused by free boron carbide abrasive grinding is quite significant, but the damage depth is not large, which increases with the increase of abrasive particle size. The subsurface damage depth of W10 and W5 particle size abrasive grinding is 7.4, 4.1 渭 m and 2.9 渭 m, respectively, which is about 1 鈮，

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