本文選題：平面超級(jí)電容器 + 石墨烯��； 參考：《哈爾濱理工大學(xué)》2017年碩士論文

【摘要】：隨著小型化和可穿戴式電子產(chǎn)品的不斷發(fā)展,人們對(duì)微型存儲(chǔ)系統(tǒng)的需求日益迫切。平面超級(jí)電容器在保證高儲(chǔ)能密度、高充放電速率和良好循環(huán)穩(wěn)定性的基礎(chǔ)上,可與便攜式電子產(chǎn)品高度兼容,實(shí)現(xiàn)了微型儲(chǔ)能器件功能集成化的要求。石墨烯是由sp2雜化碳原子結(jié)合形成的單原子層二維薄膜,作為凝聚態(tài)物理領(lǐng)域的新成員,因其獨(dú)特的力學(xué)性能和電學(xué)性能,能夠滿足儲(chǔ)能器件對(duì)電極材料的所有要求。本文基于化學(xué)氣相沉積法原理,通過(guò)探究不同生長(zhǎng)條件對(duì)石墨烯薄膜質(zhì)量的影響,得到最佳制備工藝參數(shù)。實(shí)驗(yàn)結(jié)果表明:在低壓條件下,石墨烯隨著生長(zhǎng)時(shí)間、生長(zhǎng)溫度和碳源濃度的增加而增厚。單層石墨烯的生長(zhǎng)條件為:在1000℃的恒溫狀態(tài)下,通入流量為35sccm的CH4生長(zhǎng)30min,該條件下所得薄膜透光率為95.2%,薄膜方阻為155.75?/sq。多層石墨烯生長(zhǎng)條件為:在1000℃的恒溫狀態(tài)下,通入流量為35sccm的CH4生長(zhǎng)60min;在1000℃生長(zhǎng)溫度下,65sccm的CH4流量,生長(zhǎng)30min得到的多層石墨烯擁有較小方阻約為60.28?/sq,但薄膜表面均一性較差。通過(guò)多次轉(zhuǎn)移單層石墨烯得到的多層石墨烯薄膜,在波長(zhǎng)為550nm的可見(jiàn)光處的透光率為97.2%,比在1000℃生長(zhǎng)溫度下,35sccm的CH4流量,10sccm的H2流量的條件下生長(zhǎng)30min得到的單層石墨烯透光性能好,但阻值較高。用自制和購(gòu)買的單層、多層石墨烯薄膜作為平面超級(jí)電容器電極,制備全固態(tài)平面超級(jí)電容器,通過(guò)循環(huán)伏安測(cè)試探究其超級(jí)電容特性。實(shí)驗(yàn)結(jié)果表明:隨著掃描速率的減小,平面超級(jí)電容器的循環(huán)伏安特性曲線越接近梭形,器件的電化學(xué)性能越好。當(dāng)掃描速率為20mVs-1時(shí),自制單層石墨烯超級(jí)電容器的面積比電容為62.924mFcm-2,能量密度為320.117mWhcm-3,遠(yuǎn)大于購(gòu)買單層石墨烯超級(jí)電容器性能值;當(dāng)掃描速率為100mVs-1時(shí),購(gòu)買的多層石墨烯超級(jí)電容器的面積比電容為23.642mFcm-2,能量密度為47.511mWhcm-3,遠(yuǎn)大于購(gòu)買的單層石墨烯超級(jí)電容器性能值;當(dāng)掃描速率為20mVs-1時(shí),多層轉(zhuǎn)移得到的多層石墨烯平面超級(jí)電容器的面積比電容為20.464mFcm-2,能量密度僅為1.312mWhcm-3。綜上所述,本論文對(duì)優(yōu)化CVD法制備石墨烯薄膜電極工藝的研究取得良好成果,多層轉(zhuǎn)移石墨烯薄膜制備工藝還有待提高,本文為基于CVD法制備石墨烯電極的全固態(tài)平面微型超級(jí)電容器提供了重要參考。
[Abstract]:With the development of miniaturization and wearable electronic products, the demand for micro storage system is becoming more and more urgent. On the basis of high energy storage density, high charge / discharge rate and good cycle stability, planar supercapacitors can be highly compatible with portable electronic products and achieve the functional integration requirements of micro energy storage devices. As a new member of condensed matter physics, graphene is a two-dimensional monatomic film formed by sp2 hybrid carbon atom. Because of its unique mechanical and electrical properties, graphene can meet all the requirements of energy storage devices for electrode materials. Based on the principle of chemical vapor deposition (CVD), the effects of different growth conditions on the quality of graphene films were investigated and the optimum preparation parameters were obtained. The experimental results show that graphene thickens with the increase of growth time, growth temperature and carbon source concentration at low pressure. The growth conditions of graphene monolayer are as follows: under the condition of constant temperature of 1000 鈩，

本文編號(hào)：1962507