本文選題：介電性能 + 微波介質(zhì)陶瓷��； 參考：《桂林理工大學(xué)》2015年碩士論文

【摘要】：本文通過傳統(tǒng)的固相燒結(jié)法制備了一系列可低溫?zé)Y(jié)的微波介質(zhì)陶瓷BaMV2O7(M=Mg,Zn)、LiMVO4(M=Mg,Zn)、Li2M2W3O12(M=Mg,Zn)和Li2W2O7,對其進(jìn)行了系統(tǒng)的結(jié)構(gòu)、顯微結(jié)構(gòu)和微波介電性能的分析,研究了性能與結(jié)構(gòu)之間的關(guān)系,并初步探討了這些材料作為LTCC基質(zhì)候選材料的應(yīng)用可能。(1)在BaMV2O7(M=Mg,Zn)體系中,通過固相合成法制備了BaMgV2O7和BaZnV2O7陶瓷材料。其中,830oC溫度燒結(jié)時(shí)BaMgV2O7陶瓷最致密,并獲得εr~8.2,Q×f~37600 GHz,τf~-35.2 ppm/oC的優(yōu)越微波介電性能;與BaMgV2O7相比,BaZnV2O7陶瓷具有更低最佳燒結(jié)溫度(720 oC)和高的相對密度(95.6%)。同時(shí),在720oC燒結(jié)可獲得εr~10.7,Q×f~31000 GHz,τf~-64.4 ppm/oC的良好微波介電性能。(2)高相對密度和優(yōu)越微波介電性能的LiMVO4(M=Mg,Zn)陶瓷可以在720oC燒結(jié)獲得:LiMgVO4,96.6%,εr為9.89,Q×f值為30800 GHz,τf值為-181ppm/oC;Li ZnVO4,94.9%,εr為7.15,Q×f值為17600 GHz,τf值為-114 ppm/oC。(3)Li2Mg2W3O12陶瓷在720 oC溫度燒結(jié)時(shí)具有:εr為8.36,Q×f值為56700 GHz,τf值為-72.8 ppm/oC的最佳微波介電性能。低的燒結(jié)溫度和良好的微波介電性能使Li2Mg2W3O12陶瓷非常有希望成為無線通信系統(tǒng)中的LTCC基質(zhì)候選材料。(4)Li2W2O7陶瓷主要受到密度和第二相影響其微波介電性能。低介電常數(shù),高Q×f值的Li2W2O7陶瓷可以通過添加TiO2的方法來調(diào)節(jié)使負(fù)的τf值趨于零。Li2W2O7陶瓷在最佳燒結(jié)溫度680 oC燒結(jié)時(shí),可獲得εr為12.15,Q×f值為17700GHz,τf值為-232 ppm/oC的良好微波介電性能。
[Abstract]:In this paper, a series of microwave dielectric ceramics BaMV _ 2O _ 7 and Li _ 2W _ 2O _ 7 have been prepared by conventional solid-state sintering method. The relationship between the properties and the structure of BaMV _ 2O _ 7 and Li _ 2W _ 2O _ 7 have been studied. The possible application of these materials as LTCC matrix materials was also discussed. The BaMgV2O7 and BaZnV2O7 ceramic materials were prepared by solid state synthesis in the system of BaMV _ 2O _ 7 / M _ 2O _ (7) mg / Zn _ (1). The BaMgV2O7 ceramics sintered at 830oC temperature are the densest, and the excellent microwave dielectric properties of 蔚 r-8.2Q 脳 fn37600 GHz, 蟿 f-35.2 ppm/oC are obtained. Compared with BaMgV2O7, BaZnV _ 2O _ 7 ceramics have lower sintering temperature (720oC) and higher relative density (95.6oC). At the same time, 鍦，

本文編號：1923031