本文選題：氧化鋅 + 納米復合結構��； 參考：《哈爾濱工業(yè)大學》2017年碩士論文

【摘要】：氧化鋅由于其禁帶寬度為3.37 e V且為直接帶隙半導體材料,使其成為紫外光電探測器的熱門材料之一。通過制備氧化鋅納米復合結構可以進一步提高器件的光電性能,具有很高的研究價值和應用潛力。本文分別通過光沉積和連續(xù)離子層吸附和交換法制備了Ag/ZnO、ZnS/ZnO和Ag2S/ZnO納米復合結構以提高光電性能,主要研究內容如下:(1)首先本文對高質量納米氧化鋅陣列的制備進行了研究,在ITO襯底上制備種子層后用水熱法可以得到高質量氧化鋅納米陣列,研究了溶液濃度對形貌的影響,發(fā)現(xiàn)0.03 mol/L的條件較好。之后通過光沉積的方法成功制備了Ag/ZnO納米復合結構,改變紫外光功率、硝酸銀濃度及反應時間,研究不同條件對納米復合結構的影響,發(fā)現(xiàn)可以通過改變實驗參數(shù)控制納米復合結構的形貌和成分并使吸收邊紅移。在此基礎上制備MSM型光電探測器,研究納米復合結構對光電性能的影響,在365 nm光源下進行測試,發(fā)現(xiàn)該復合結構能夠提高光電性能,且銀納米顆粒存在最優(yōu)含量。(2)之后通過連續(xù)離子層吸附和交換法成功制備ZnS/ZnO和Ag2S/ZnO納米復合結構,改變反應時間、硝酸銀濃度及反應循環(huán)次數(shù),研究不同條件對納米復合結構的影響,發(fā)現(xiàn)可以通過改變實驗參數(shù)控制納米復合結構的形貌和成分,其中ZnS/ZnO納米復合結構不影響吸收邊位置,而Ag2S/ZnO納米復合結構可以使吸收邊紅移。(3)接下來在ZnS/ZnO和Ag2S/ZnO納米復合結構的基礎上制備MSM型光電探測器,研究不同條件對器件性能的影響,在365 nm光源下進行測試,發(fā)現(xiàn)復合結構能夠提高光電性能。對器件進行光響應測試,器件的最大響應度為0.026 A/W,最大響應波長376 nm。
[Abstract]:Zinc oxide has become one of the most popular materials for UV photodetectors because its band gap is 3.37e V and it is a direct bandgap semiconductor material. The preparation of ZnO nanocomposite structure can further improve the photoelectric performance of the device, which has high research value and application potential. In order to improve the optoelectronic properties, Ag / ZnO / ZnS / ZnO and Ag2S/ZnO nanocomposites were prepared by photodeposition and continuous ion layer adsorption and exchange respectively. The main research contents are as follows: (1) in this paper, the preparation of high quality ZnO nanocrystalline ZnO arrays is studied. High quality ZnO nanoarrays can be obtained by hydrothermal method after preparation of seed layer on ITO substrate. The effect of solution concentration on morphology is studied. It is found that the condition of 0.03 mol/L is better. After that, the Ag/ZnO nanocomposites were successfully prepared by photodeposition. The effects of different conditions on the nanocomposites were studied by changing the UV light power, the concentration of silver nitrate and the reaction time. It is found that the morphology and composition of the nanocomposite structure can be controlled by changing the experimental parameters and the absorption edge can be redshift. On this basis, MSM photodetectors were prepared, and the effect of nanocomposite structure on the photoelectric properties was studied. The results of measurement under 365nm light source showed that the composite structure could improve the photoelectric performance. The composite structure of ZnS/ZnO and Ag2S/ZnO was prepared by continuous ion layer adsorption and exchange method. The reaction time, the concentration of silver nitrate and the times of reaction cycle were changed. The influence of different conditions on the nanocomposite structure was studied. It was found that the morphology and composition of the nanocomposite structure could be controlled by changing the experimental parameters, and the ZnS/ZnO nanocomposite structure had no effect on the absorption edge position. The Ag2S/ZnO nanocomposite structure can make the absorption edge red shift.) next, the MSM photodetectors are fabricated on the basis of the ZnS/ZnO and Ag2S/ZnO nanocomposite structures. The effects of different conditions on the performance of the devices are studied and tested at 365nm light source. It is found that the composite structure can improve the photoelectric performance. The maximum responsivity of the device is 0.026 A / W and the maximum response wavelength is 376 nm.
【學位授予單位】：哈爾濱工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TB383.1;TQ132.41

【參考文獻】

相關期刊論文 前1條

1 楊佳霖;劉可為;申德振;;Recent progress of ZnMgO ultraviolet photodetector[J];Chinese Physics B;2017年04期

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本文編號：1853047